摘要:

Epitaxialn-type silicon layers were grown onp-type silicon substrates by vacuum deposition combined with silicon ion implantation (PIVD). A dependency of electrical characteristics of Si epitaxial junction on acceleration energy of silicon ions was measured. A location of the interface and a distribution profile of defects were investigated by means of He+back-scattering technique, and some distance shift of the interface occurred in the case of PIVD.

ISSN:0033-7579    

DOI:10.1080/00337577108242022

出版商:Taylor & Francis Group    

年代:1971

数据来源: Taylor

摘要:

The many-electron molecular orbital method predicts a ground state for the various charged vacancy centres in silicon which has a spin multiplicity in agreement with the electron spin resonance results. Symmetric relaxation and Jahn-Teller contributions have been included in first order. The quantitative features of the model are very different to those implied by the one-electron model.

ISSN:0033-7579    

DOI:10.1080/00337577108242023

出版商:Taylor & Francis Group    

年代:1971

数据来源: Taylor

摘要:

A simple molecular orbital treatment which has previously been applied successfully to the substitutional nitrogen donor and boron acceptor in diamond is here applied to the vacancy in diamond. Localized levels associated with the vacancy are found in the gap and an outward relaxation of the four neighbors surrounding the vacancy is predicted. Jahn-Teller effects are found to give stabilization energies of ∼0.5 eV. A critical comparison to the ‘defect molecule’ approach of Coulson and Kearsley and Yamaguchi is included.

ISSN:0033-7579    

DOI:10.1080/00337577108242024

出版商:Taylor & Francis Group    

年代:1971

数据来源: Taylor

摘要:

The paper reviews the information on vacancies and interstitials from such techniques as diffusion studies, precipitation from supersaturated solid solutions, quenching from high temperatures, and plastic deformation. Self- and impurity diffusion are considered in some detail and the evidence is presented according to which the high-temperature self-diffusion occurs via extended interstitials in silicon and via extended vacancies in germanium. From the diffusion coefficients of group-V impurities and from the precipitation of substitutional nickel impurities the selfdiffusion coefficient for a vacancy self-diffusion mechanism is derived and found to be lower than that from high-temperature self-diffusion experiments. This constitutes evidence for a change-over in the self-diffusion mechanism in silicon at about 900 °C to a low-temperature vacancy mechanism with lower activation energy and lower preexponential factor than the interstitial mechanism. It is proposed that self-interstitials in silicon might have a rather high migration energy,E1I,M; tentatively;E1IM⋍ 0.8 eV and a donor level at 0.40 eV above the valence band are attributed to the self-interstitials in silicon.

ISSN:0033-7579    

DOI:10.1080/00337577108242025

出版商:Taylor & Francis Group    

年代:1971

数据来源: Taylor

ISSN:0033-7579    

DOI:10.1080/00337577108242026

出版商:Taylor & Francis Group    

年代:1971

数据来源: Taylor

摘要:

The review concentrates on low temperature irradiation and annealing in germanium. Calculations are presented for the charge states to be expected for donor and acceptor centers during irradiation near 10 °K. The calculations are applied to a discussion of the diffusion of an interstitial atom assuming it is mobile in various charge states during irradiation.

ISSN:0033-7579    

DOI:10.1080/00337577108242027

出版商:Taylor & Francis Group    

年代:1971

数据来源: Taylor

摘要:

Illumination with filtered light after electron bombardment at ∼8°K reveals defects produced inp-type germanium. During illumination, the carrier concentration decreases as the sum of two exponentials. Identification of the two time constants with two stages of thermal recovery at about 50°K and 65°K indicates the short time constant is associated with the low temperature recovery and the long time constant with the high temperature recovery. Enhancement of the short time component is accomplished by controlling the illumination time, and of the long time component by heat treatment to 80°K prior to exposure by filtered light. Evidence is presented for nearly complete (98 per cent) annealing of defects by white light illumination both before and after exposure to filtered light. This is in contrast to radiation annealing of the exposed defects by the 1 MeV electron beam which anneals only about 80 per cent of the defects and converts the remainder to their neutral state. The rate of introduction of damage increases from very small values for low doses to ∼0.1–0.2 cm−1for large doses of irradiation. It is believed that the low rate of damage together with the highly mobile defect constituents preclude the existence of isolated vacancies and interstitials.

ISSN:0033-7579    

DOI:10.1080/00337577108242028

出版商:Taylor & Francis Group    

年代:1971

数据来源: Taylor

摘要:

Slices, cut from antimony or arsenic dopedn-type germanium ingots, were additionally doped with various lithium impurity concentrations. Samples, suited for Hall effect and minority-carrier diffusion-length measurements, were then irradiated by 1 MeV electrons at 78 or 125 °K and after that in some cases were annealed isochronally. No differences in carrier removal or lifetime damage rates between lithium doped and conventionaln-type crystals were found up to 200–230 °K. Hall mobility and lifetime in irradiated lithium doped samples recovered substantially at the annealing temperatures ranges of 240–320 °K and 200–280 °K, respectively, that is at much lower temperatures, than in the crystals without lithium. NoEc− 0.20 eV acceptor level radiation defects were observed in the samples with large lithium impurity concentrations.

ISSN:0033-7579    

DOI:10.1080/00337577108242029

出版商:Taylor & Francis Group    

年代:1971

数据来源: Taylor

摘要:

Lattice defects introduced inp-type nondegenerate germanium by 1.5 MeV electron irradiation at liquid nitrogen temperature was investigated by means of electrical resistivity and Hall coefficient measurements. The annealing behavior of two kinds of defects, which anneal at about 220 °K, was investigated in detail. Each of them has an electron trap. Making use of trap-filling and emptying processes, the 220 °K defects are separated from other defects.

ISSN:0033-7579    

DOI:10.1080/00337577108242030

出版商:Taylor & Francis Group    

年代:1971

数据来源: Taylor

摘要:

Effects of electron bombardment on Phosphorus-dopedN-type Germanium (Ge) were studied by EPR techniques in the hope of detecting the presence of interstitial Phosphorus (PI) which were ejected from the original substitutional sites through the interaction with the mobile interstitial Ge atoms produced by the bombardment.

ISSN:0033-7579    

DOI:10.1080/00337577108242031

出版商:Taylor & Francis Group    

年代:1971

数据来源: Taylor