1. |
Monte carlo simulation of channeling effects on recoil motion |
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Radiation Effects,
Volume 86,
Issue 6,
1984,
Page 191-197
A.M. Mazzone,
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摘要:
Using a Monte Carlo simulation method we have investigated the channeled motion of recoils in a composite amorphous-crystalline target. The study has been applied to a SiO2/Si system and to the motion of oxygen recoils in the crystalline Si substrate.
ISSN:0033-7579
DOI:10.1080/01422448408205222
出版商:Taylor & Francis Group
年代:1984
数据来源: Taylor
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2. |
Peculiarities of divacancy annealing in radiation defect clusters |
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Radiation Effects,
Volume 86,
Issue 6,
1984,
Page 199-204
V.I. Kuznetsov,
P.F. Lugakov,
V.V. Shusha,
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摘要:
The annealing mechanism of divacancies involved in radiation defect clusters is suggested in accordance with which the interaction of interstitial carbon atoms and intrinsic diinterstitials, mobile at T≳ 100°C, with divacancies results in their smooth annealing in a wide temperature range.
ISSN:0033-7579
DOI:10.1080/01422448408205223
出版商:Taylor & Francis Group
年代:1984
数据来源: Taylor
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3. |
Flash-lamp annealing of boron implanted silicon |
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Radiation Effects,
Volume 86,
Issue 6,
1984,
Page 205-211
P.I. Gaiduk,
F.F. Komarov,
V.A. Pilipenko,
V.S. Solovỳyev,
N.I. Sterzhanov,
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摘要:
Structure and impurity behaviour of silicon doped by B+ion implantation up to dose of 2 × 1015ion/cm2have been investigated after lamp pulse annealing. It has been demonstrated that the implanted layer structure strongly depends on the implantation dose, light energy density, as well as the crystallographic orientation. The optimal annealing result in the structure, which is equivalent to that obtained in the thermal treatment, The impurity diffusive redistribution proved to be rather weaker then in the case of thermal treatment.
ISSN:0033-7579
DOI:10.1080/01422448408205224
出版商:Taylor & Francis Group
年代:1984
数据来源: Taylor
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4. |
Flash – lamp annealing of phosphorus and antimony implanted silicon |
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Radiation Effects,
Volume 86,
Issue 6,
1984,
Page 213-222
P.I. Gaiduk,
F.F. Komarov,
V.A. Pilipenko,
V.S. Solovỳyev,
N.I. Sterzhanov,
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PDF (471KB)
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摘要:
The structure and electrophysical properties of a silicon layers after P+and Sb+ion implantation and subsequent pulse annealing of millisecond lengths have been investigated by the transmission electron microscopy and four-point probe measurements. It has been demonstrated, that for certain implantation and annealing conditions the epitaxially grown layers can involve the microtwins and dislocation loops. The impurity redistribution under the pulse annealing depends on the implantation dose and rather weaker the light irradiation energy density.
ISSN:0033-7579
DOI:10.1080/01422448408205225
出版商:Taylor & Francis Group
年代:1984
数据来源: Taylor
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5. |
On the topography of sputtered or chemically etched crystals: Surface energies minimised |
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Radiation Effects,
Volume 86,
Issue 6,
1984,
Page 223-230
LewisT. Chadderton,
JohnO. Cope,
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PDF (339KB)
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ISSN:0033-7579
DOI:10.1080/01422448408205226
出版商:Taylor & Francis Group
年代:1984
数据来源: Taylor
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