摘要:

The Molière potential is widely used in radiation damage simulation studies. It is not much used in analytical transport theory calculations because of the awkward expression for the differential cross section corresponding to the potential. We follow a two step process to obtain a useful cross section: adopting the Lindhard, Nielsen and Scharff (LNS) approximations in order to generate a simpler form of the Molière cross section and then creating a simple, easy-to-use, fit to that approximate form. Within the framework of the LNS treatment of atomic cross sections, our fit is accurate to 6%. Simple forms for the total cross section and several related quantities are presented.

ISSN:0033-7579    

DOI:10.1080/01422448008218659

出版商:Taylor & Francis Group    

年代:1980

数据来源: Taylor

摘要:

Experimental results are discussed, which are not in agreement with the predictions of the one-and of the simple two-interstital-model. From the experimental data a large recombination volume between vacancies and self-interstitials of the order of α = 105is derived. With this feature the predictions of the extended TIM are in agreement with the experimental findings including also such ones, which have been claimed so far to be only in favour of the OIM.

ISSN:0033-7579    

DOI:10.1080/01422448008218660

出版商:Taylor & Francis Group    

年代:1980

数据来源: Taylor

ISSN:0033-7579    

DOI:10.1080/01422448008218661

出版商:Taylor & Francis Group    

年代:1980

数据来源: Taylor

摘要:

The effect of gamma irradiation on MOS devices prepared under different oxidation conditions Is investigated. The C-V characteristics of the devices are studied before and after exposing the latter with gamma radiations of CO60(1.17 and 1.33 MeV gamma rays). For MOS transistor (n-channel depletion type devices) the C-V characteristics change slightly towards the negative voltage axis and the Cminalso decreases after Irradiation. For MOS capacitor (wet oxide) there is a change from high frequency C-V characteristics to low frequency C-V characteristics. In the case of a MOS capacitor (HCl grown) breakdown occurs relatively at lower voltage.

ISSN:0033-7579    

DOI:10.1080/01422448008218662

出版商:Taylor & Francis Group    

年代:1980

数据来源: Taylor

ISSN:0033-7579    

DOI:10.1080/01422448008218663

出版商:Taylor & Francis Group    

年代:1980

数据来源: Taylor

摘要:

Steady state radiolyais of dilute aqueous (neutral) solution of thymidine monophosphate (TMP) with reference to base damage and inorganic phosphate release (Pi) are reported in O2or N2saturated conditions. Dose response are shown graphically and an inverse correlation between the two observed. We believe that in nitrogen conditions, reducing radicals are also responsible for base damage at low doses and become available for phosphate release when base damage saturates at high doses

ISSN:0033-7579    

DOI:10.1080/01422448008218664

出版商:Taylor & Francis Group    

年代:1980

数据来源: Taylor

ISSN:0033-7579    

DOI:10.1080/01422448008218665

出版商:Taylor & Francis Group    

年代:1980

数据来源: Taylor

摘要:

The fading behaviour of the thermoluminescent phosphor CaS04:Dy, TLD-900, obtained from the Harshaw Chemical Company has been investigated up to 100 hours. Some experiments have been begun to investigate the effect of post-irradiation annealing (post-i.a.) on the stored TL signal.

ISSN:0033-7579    

DOI:10.1080/01422448008218666

出版商:Taylor & Francis Group    

年代:1980

数据来源: Taylor

摘要:

Channeling measurements have been performed to investigate the annealing of the irradiation damage produced in monocrystalline silicon by low dose (1012-1013ions cm−2) implants at 40 K with monatomic and diatomic ions of As, Sb, Te and Bi having incident energies of 15–30 keV. The mass of the bombarding ion has a pronounced effect upon the subsequent annealing behaviour, with the heavier ion implants annealing at the higher temperature. Within the monatomic series of implants, the annealing behaviour correlates well with the average deposited energy densitywithin the cascade. However, thiscorrelation fails to account for the observed increase in anneal temperature in going from monatomic Bi to diatomic Sb2or Te2implants.

ISSN:0033-7579    

DOI:10.1080/01422448008218667

出版商:Taylor & Francis Group    

年代:1980

数据来源: Taylor

ISSN:0033-7579    

DOI:10.1080/01422448008218668

出版商:Taylor & Francis Group    

年代:1980

数据来源: Taylor