1. |
Use of thermal annealing for radiation hardening of germanium to γ-rays |
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Radiation Effects,
Volume 67,
Issue 3,
1982,
Page 63-67
S.J. Pearton,
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摘要:
Thermal annealing for extended periods (20-1000 hours) at moderately low temperatures (500–675°C) is shown to produce significant hardening to the γ-radiation induced EV+ 0.23 eV and EV+ 0.38 eV levels in Ge crystals grown by the Czochralski technique from silica crucibles. Annealed samples showed concentrations of these levels between 33–58% of those in untreated control samples, as measured by deep level transient spectroscopy. In some samples, heating to 500°C for 1 hour produced the same effect.
ISSN:0033-7579
DOI:10.1080/01422448108226842
出版商:Taylor & Francis Group
年代:1982
数据来源: Taylor
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2. |
Ion beam induced atomic distribution of implanted range profiles (the system Ne→Ge/Si) |
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Radiation Effects,
Volume 67,
Issue 3,
1982,
Page 69-72
N.P. Tognetti,
G. Carter,
A. Gras-Marti,
D.G. Armour,
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摘要:
The redistribution of Germanium atoms previously implanted at 40 keV in Si was investigated after bombardment with various fluences (1015−1017cm−2) of 20 keV Ne+ions- High resolution RBS was used for the depth analysis. The observed redistribution of the Germanium profile is discussed in terms of the Ne energy deposition distribution, and some preliminary theoretical estimates are given.
ISSN:0033-7579
DOI:10.1080/01422448108226843
出版商:Taylor & Francis Group
年代:1982
数据来源: Taylor
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3. |
Radiolysis of trioxalatoferrate (III) ions in aqueous solution-the effect of initial concentration of solute and dose rate |
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Radiation Effects,
Volume 67,
Issue 3,
1982,
Page 73-75
B.K. Sharma,
Purshottam Saran,
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摘要:
During the radiolysis of deoxygenated aqueous solution of trioxalato ferrate (III) ions at pH2, after the initial building up of Fe(II) concentration, its steady-state is reached. Both the initial rate of production of Fe (II) and its steady-state concentration increase with the increase in dose rate as well as with the initial concentration of the ferric chelate. The radiolytic results have been explained on the assumption of reduction of Fe(III) of the chelate by the available sub-excitation electrons in addition to the eaqor/and H atom (with fixed G values).
ISSN:0033-7579
DOI:10.1080/01422448108226844
出版商:Taylor & Francis Group
年代:1982
数据来源: Taylor
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4. |
Thermal redistribution of indium in amorphous silicon layers |
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Radiation Effects,
Volume 67,
Issue 3,
1982,
Page 77-82
R.G. Elliman,
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摘要:
A new impurity redistribution mechanism is reported for low temperature annealing (525°C) of (100) Si samples implanted with high indium doses. The redistribution is a strong function of implant dose and is believed to be stress related.
ISSN:0033-7579
DOI:10.1080/01422448108226845
出版商:Taylor & Francis Group
年代:1982
数据来源: Taylor
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5. |
Metamict states of ThSiO4. dimorphs, huttonite and thorite |
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Radiation Effects,
Volume 67,
Issue 3,
1982,
Page 83-85
L. Cartz,
F.G. Karioris,
K.A. Gowda,
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ISSN:0033-7579
DOI:10.1080/01422448108226846
出版商:Taylor & Francis Group
年代:1982
数据来源: Taylor
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6. |
On the nature op continuum emission production op photons, emitted by the products op repractory metal sputtering |
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Radiation Effects,
Volume 67,
Issue 3,
1982,
Page 87-93
S.P. Belykh,
V.I. Veksler,
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摘要:
Bombardment of a clean Ta target by 4 keV Cs+ions under ultra high vacuum (UHV) has been experimentally shown to give rise to photon continuum emission by sputtered products.
ISSN:0033-7579
DOI:10.1080/01422448108226847
出版商:Taylor & Francis Group
年代:1982
数据来源: Taylor
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7. |
On the temperature dependence of the sizes of defects produced in copper by bombardment with 30 keV-Cu+IONS |
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Radiation Effects,
Volume 67,
Issue 3,
1982,
Page 95-99
A. Laupheimer,
W. Frank,
M. Ruhle,
A. Seeger,
M. Wilkens,
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摘要:
Measurements of the sizes of defects produced in Cu by ion bombardment between 6 K and 295 K have been carried out. Contrary to previous investigations a dependence of the mean defect size on the irradiation temperature was not found.
ISSN:0033-7579
DOI:10.1080/01422448108226848
出版商:Taylor & Francis Group
年代:1982
数据来源: Taylor
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