摘要:

We have modified the contact interface between Pd2Si and n-Si by ion implantation and investigated the effect of the implantation on Schottky barrier height and rate of silicide formation by electrical current-voltage measurements and Rutherford backscattering spectroscopy. Various ions, As. P, B. O and Si at 50 keV and up to a dose of 5 × 1014ions/cm2were implanted into Si wafers before the Pd-deposition to form Pd2Si. In the case of As and P, the implantation showed a large erect on the subsequent Pd2Si formation; the formation is enhanced in the as-implanted samples, but it is retarded if an annealing at 600°C precedes the Pd-deposition. Silicide formation was found generally to help reduce the implantation damage (with or without the 600°C annealing) and showed improvements on the electrical characteristics of the contact interface. Consumption of the entire implanted region by silicide formation is found necessary for obtaining a good diode performance. In the case of As implantation, a lowering of the Schottky barrier height of Pd2Si has been observed.

ISSN:0033-7579    

DOI:10.1080/00337578008243057

出版商:Taylor & Francis Group    

年代:1980

数据来源: Taylor

摘要:

Hall effect and sheet resistivity measurements have been performed on boron implantations in 1μmsilicon layers on sapphire (SOS), and in bulk silicon. The doses used were 1014, 1015and 1016ions/cm2, and implantation energies were 150 and 300 keV. The samples were annealed at temperatures between 300 and 800°C. As a rule the effective number of carriers in SOS was found to be about twice the number of carriers in bulk silicon. However, the mobility is lower in bulk silicon, resulting in a sheet resistivity almost the same in boron implanted SOS and bulk silicon.

ISSN:0033-7579    

DOI:10.1080/00337578008243058

出版商:Taylor & Francis Group    

年代:1980

数据来源: Taylor

ISSN:0033-7579    

DOI:10.1080/00337578008243059

出版商:Taylor & Francis Group    

年代:1980

数据来源: Taylor

ISSN:0033-7579    

DOI:10.1080/00337578008243060

出版商:Taylor & Francis Group    

年代:1980

数据来源: Taylor

摘要:

In the study of ion implantation, electrically active ionsornoble gas ions are often used for damage study, range profiling, etc. Very seldom are both electrically active ionsandnoble gas ions implanted at about the same depth. In the work reported here, argon and arsenic ion implants and their interference in diffusion were studied by using backscattering, electrical measurements, and transmission electron microscopy (TEM). Several unexpected phenomena were observed.

ISSN:0033-7579    

DOI:10.1080/00337578008243061

出版商:Taylor & Francis Group    

年代:1980

数据来源: Taylor

摘要:

The channeling technique has been used to locate Pb implanted into α-Al2O3single crystal. The main purpose has been to learn how to obtain information about the location of an impurity in a complex structure. A Pb location is proposed according to data of full angular scans through different axial and planar channeling dips.

ISSN:0033-7579    

DOI:10.1080/00337578008243062

出版商:Taylor & Francis Group    

年代:1980

数据来源: Taylor

摘要:

Influence of Q-switched laser pulse energy (λ = 0.69 μm, t = 15 ns) and the preliminary heating of the substrate upon the extent of the implanted atoms activation (Si ← B+. Si ← P+) as well as the carrier mobility and the electroactive impurity distribution profiles at the laser annealing has been investigated. It has been found out that increase of the heating temperature of a substate from 25°C to 400°C results in essential decrease of the threshold annealing intensity; distribution temperature protiles are used to account for the obtained experimental curves. The influence of phase transitions were taken into account during calculation. The possible mechanisms of the laser annealing of implanted layers are discussed.

ISSN:0033-7579    

DOI:10.1080/00337578008243063

出版商:Taylor & Francis Group    

年代:1980

数据来源: Taylor

ISSN:0033-7579    

DOI:10.1080/00337578008243064

出版商:Taylor & Francis Group    

年代:1980

数据来源: Taylor

ISSN:0033-7579    

DOI:10.1080/00337578008243065

出版商:Taylor & Francis Group    

年代:1980

数据来源: Taylor

ISSN:0033-7579    

DOI:10.1080/00337578008243066

出版商:Taylor & Francis Group    

年代:1980

数据来源: Taylor