摘要:

Measurements have been made of mass attenuation coefficients for some dosimetry-related materials using low energy photons in the range 5–12 keV. The results are compared with theoretical calculations.

ISSN:0033-7579    

DOI:10.1080/01422448208228830

出版商:Taylor & Francis Group    

年代:1982

数据来源: Taylor

摘要:

Electron irradiation of CdTe in a high voltage electron microscope produced faulted dislocation loops on {111} plane with a triangular shape oriented in one direction, which reflects the crystal polarity. The loops are of interstitial type and bounded only by one type of the Frank partial or the α-Frank partial. The result is discussed in terms of a possible difference in the core structure between α- and β-Frank partials.

ISSN:0033-7579    

DOI:10.1080/01422448208228831

出版商:Taylor & Francis Group    

年代:1982

数据来源: Taylor

摘要:

Results are presented for helium bubble formation in Ni and amorphous Fe40Ni38Mo4Bl8during 5 keV He-implantation at 300 K. The formation of helium blisters on the surface is also reported.

ISSN:0033-7579    

DOI:10.1080/01422448208228832

出版商:Taylor & Francis Group    

年代:1982

数据来源: Taylor

摘要:

Studies of the structure changes in heated (20–200°C) and γ –irradiated (109- 5×109R, E = 1.3 Mev, Tirrad. = 40°C) crystals CsNO3, RbNO3and NaNO2have been carried out by means of X-ray diffraction methods. The investigation of temperature effect on the crystal structure has shown that the phase transformation in CsNO3and NaNO2are of continuous type while that in RbNO3is discontinuous. It has been found that crystal structures of CsNO3and NaNO2change under irradiation in the same way, as they change under heating, No changes of RbNO3crystal structure caused by irradiation have been found. Experimental results agree with an assumption that radiation-induced structure changes of high-temperature type can be observed only in the compounds, the phase transition of which is of continuous type.

ISSN:0033-7579    

DOI:10.1080/01422448208228833

出版商:Taylor & Francis Group    

年代:1982

数据来源: Taylor

摘要:

A generalized model is presented for describing point defect and amorphous phase generation kinetics during ion implantation into silicon. The model considers the heterogeneity of the damage clusters by dividing them into three different areas: into an amorphous core (a-Si), an inner periphery of high point defect concentration (undetectable by BPR), and an outer periphery of low point defect concentration (detectable by EPR). Weil-known experimental BPR results may be interpreted by this model.

ISSN:0033-7579    

DOI:10.1080/01422448208228834

出版商:Taylor & Francis Group    

年代:1982

数据来源: Taylor