摘要:

A new observation about the influence of reactor neutron bombardment on the configurational disorder of glasses has been drawn from enthalpy change diagrams (DSC) performed near Tg on amorphous selenium.

ISSN:0033-7579    

DOI:10.1080/01422448108228597

出版商:Taylor & Francis Group    

年代:1981

数据来源: Taylor

摘要:

The effect of post exposure annealing on the track registeration characteristics of CR-39 (Pershore) Solid State Nuclear Track Detectors has been studied. The changes introduced in the bulk etch rates, track diameter, and the track density have been observed. The results indicate that the bulk etch rate of the detectors and the size of the tracks are considerably changed due to annealing. Variations in the track density are, however, not serious in the presently studied temperature range.

ISSN:0033-7579    

DOI:10.1080/01422448108228598

出版商:Taylor & Francis Group    

年代:1981

数据来源: Taylor

摘要:

The increase of positron parameters in neutron-irradiated α-iron around 180 K is shown to be due to correlated vacancy migration within displacement cascades. Therefore the recent attempt to use positron annihilation in neutron-irradiated iron as an evidence for interstitial migration at stage III is internally inconsistent and incompatible with well-established experimental results.

ISSN:0033-7579    

DOI:10.1080/01422448108228599

出版商:Taylor & Francis Group    

年代:1981

数据来源: Taylor

摘要:

The effects of radiation-induced solute redistribution and diffusion are studied for 30 keV Mn implants in nickel irradiated with 75 keV Ni+ions at 500°C. The peak of the Mn implant profile is driven to greater depth with increasing irradiation dose until a steady-state solute profile is established. The rate of drift of Mn atoms and their diffusion coefficient is related to the distribution of point-defects in the nickel under irradiation.

ISSN:0033-7579    

DOI:10.1080/01422448108228600

出版商:Taylor & Francis Group    

年代:1981

数据来源: Taylor

摘要:

We report here the formation of helium gas bubbles in a nickel based metallic glass Ni45Fe5Co20Cr10Mo4Bl6after 50 keV helium ion irradiations at room temperature studied by transmission electron microscopy. At higher doses bubbles eventually grow and deform the material surface plastically leading to blister formation. Critical dose for blister formation is determined. Helium gas bubble formation is associated with partial crystallisation of the glass which can be observed from selected area diffraction from the region where bubbles are formed. Micro-hardness measurements are also performed on the irradiated samples as a function of dose. Increase in the microhardness has been observed after a dose at which helium bubbles are formed.

ISSN:0033-7579    

DOI:10.1080/01422448108228601

出版商:Taylor & Francis Group    

年代:1981

数据来源: Taylor

摘要:

Methodolgy is presented which permits the conservative performance assessment of transistor electronics under the combined environments of neutron irradiation and low temperature.

ISSN:0033-7579    

DOI:10.1080/01422448108228602

出版商:Taylor & Francis Group    

年代:1981

数据来源: Taylor

摘要:

The effect on thermal oxidation of implantation of the alkali species Li, Na, K, Rb and Cs has been studied. A correlation is found with the atomic and ionic radii and atomic masses of the implanted species, the larger ions leading to greater oxidation. We propose that the implanted species may affect the oxide plasticity and that this may be the controlling factor which determines the degree of oxidation.

ISSN:0033-7579    

DOI:10.1080/01422448108228603

出版商:Taylor & Francis Group    

年代:1981

数据来源: Taylor

摘要:

The enhancement of the anodization of silicon due to ion implantation is observed to be significant in the case of heavy ion implant with doses more than 1014ions/cm2. The studies indicate that the chemical effect caused by the implanted ions is smaller, but the lattice defects introduced by the implantation play an important role in the enhancement of the oxidation rate. A novel application of this effect to investigate the depth profile of damage in heavy implanted silicon is shown.

ISSN:0033-7579    

DOI:10.1080/01422448108228604

出版商:Taylor & Francis Group    

年代:1981

数据来源: Taylor

ISSN:0033-7579    

DOI:10.1080/01422448108228605

出版商:Taylor & Francis Group    

年代:1981

数据来源: Taylor