摘要:

A detailed analysis of generation and potential recrystallization of amorphous zones resulting from ion irradiation of solid materials is given. The criterion for generation of such spikes is considered to be that sufficient energy is deposited locally to induce melting. Subsequently the heated zone is considered to cool via unperturbed thermal diffusion from an initial temperature distribution of Gaussian form, although the expected ellipsoidal geometry is idealized to spherical symmetry for analytical convenience. Recrystallization is considered to occur via a thermally activated process during spike quenching and criteria for crystallization at both zone boundaries and centres are deduced. These criteria are shown to correspond well to earlier analyses, but other parameters such as substrate temperature and energy deposition density are found to be of considerable importance. Suggestions for more accurate modelling are also examined.

ISSN:0033-7579    

DOI:10.1080/00337577808233164

出版商:Taylor & Francis Group    

年代:1978

数据来源: Taylor

摘要:

The annealing behaviour of (1 1 1 silicon, amorphized by the implantation of atomic and molecular ions under identical atomic conditions, has been studied. Variations in the epitaxial regrowth rate are reported for As+/As+2and Sb+/Sb+2implants at 1 × 1015atoms cm−2with 40 keV/atom. The results presented have been obtained by sheet resistance and Rutherford back-scattering measurements during isochronal annealing. A new parameter influencing the epitaxial regrowth rate of amorphous silicon is identified: namely, the local damage structure of the amorphous layer produced by the implantation process.

ISSN:0033-7579    

DOI:10.1080/00337577808233165

出版商:Taylor & Francis Group    

年代:1978

数据来源: Taylor

摘要:

An annealing stage in the temperature range 6-14 K of irradiated germanium was studied in succession to the work reported at the Dubrovnik Conference. In this study, it was revealed that the fractional amount of annealed defects in the stage increases with increasing impurity concentration. The annealing was found to be governed by the first order kinetics with the activation energy of 4.2 meV.

ISSN:0033-7579    

DOI:10.1080/00337577808233166

出版商:Taylor & Francis Group    

年代:1978

数据来源: Taylor

摘要:

The application of cellulose nitrate film to the detection of ions in a HVEM is described. The Harwell HVEM, which was used in this study, was found to produce a very low intensity ion beam (≲ 106ions/cm2/s).

ISSN:0033-7579    

DOI:10.1080/00337577808233167

出版商:Taylor & Francis Group    

年代:1978

数据来源: Taylor

摘要:

The disorder profiles of 25, 50 and 70 keV C+implants in Si are studied by proton backscattering, using the channelling effect technique. The implantation and the analysis were carried out at room temperature. The measured disorder profiles show reasonable agreement with theory. Annealing of the introduced disorder by proton bombardment is observed. Furthermore, different annealing behaviour of the disorder is observed for different primary energies of the C+ions.

ISSN:0033-7579    

DOI:10.1080/00337577808233168

出版商:Taylor & Francis Group    

年代:1978

数据来源: Taylor

摘要:

The annealing of damage introduced by 70 keV C implantation of Si is studied for impact of H+and He+beams in the energy interval 30-200 keV. For a good description of the annealing behaviour it is necessary to account for the damage introduction which occurs simultaneously. It turns out that the initial damage annealing rate is proportional to the amount of damage. The proportionality constant is related to a quantity introduced in an earlier paper in order to describe saturation effects in the damage production after H+or He+impact in unimplanted Si. This indicates that the same mechanism governs both processes: beam induced damage annealing and saturation of the damage introduction.

ISSN:0033-7579    

DOI:10.1080/00337577808233169

出版商:Taylor & Francis Group    

年代:1978

数据来源: Taylor

摘要:

High-rate sputter deposition has been used to increase the thickness of ion-bombarded specimens such that TEM specimens can be obtained parallel to the ion beam direction. By using this technique the complete damage profile has been observed in Mo bombarded at 1000°C with Ni++ions or Ni+++ He+ions. The damage is less than expected near the ion entry surface, but extends to a greater distance than displacement damage calculations would indicate. These observations can be rationalized when long-range diffusion of point defects from their point of origin is considered. The concurrent injection of He and Ni results in a smaller void size and higher void density than in the irradiations without He. There is little effect of helium on void volume fraction. The deposited Ni atoms (in solution) also appeared to affect the formation of voids in the Mo.

ISSN:0033-7579    

DOI:10.1080/00337577808233170

出版商:Taylor & Francis Group    

年代:1978

数据来源: Taylor

摘要:

Upon annealing silicon, implanted with boron at fluences greater than 5 × 1015B+/cm2, stacking faults in concentrations up to 2 × 108/cm2were observed on all four {111} planes to a depth of 1800 Å below the specimen surface. The faults were enclosed by interstitial Frank sessile loops. Annihilation occurred on anealing between 980-1000°C. The region in which the loops nucleate is assumed to contain silicon rendered amorphous at this high fluence, and the faults are believed to be condensed sheets of silicon atoms whose sites become occupied by boron atoms upon annealing between 800-950°C. Annihilation at temperatures close to 1000°C may be caused by solute stress due to enhanced boron diffusion.

ISSN:0033-7579    

DOI:10.1080/00337577808233171

出版商:Taylor & Francis Group    

年代:1978

数据来源: Taylor

摘要:

The emission of halogen and alkali atoms, occurring under bombardment of alkali halides with electrons has been investigated. The electron energy was 540 eV and the temperature of the target was varied between room temperature and 400°C. We measured the energy distribution of the emitted neutral particles with a time of flight method. It was found that either diffusing interstitial halogen atoms or moving holes dominate the sputtering process above 200°C. Below 150°C alkali halides with lattice parameters/d≥ 0.33 show emission of non-thermal halogen atoms.sis the interionic space between two halogen ions in a <110> direction anddis the diameter of a halogen atom. In general the energy distribution of the alkali and halogen atoms is thermal above 200°C, but not Maxwellian.

ISSN:0033-7579    

DOI:10.1080/00337577808233172

出版商:Taylor & Francis Group    

年代:1978

数据来源: Taylor

摘要:

Rutherford backscattering and channeling (RBS) has been employed to investigate the annealing characteristics of ion-bombarded <111> silicon for a wide range of implant species. The general recrystallization behaviour is that high levels of remnant disorder are observed for high-dose (typically > 1015ions cm-2) implants of all species investigated, and transmission electron microscopy indicates the presence of a polycrystalline reordered layer in such cases. The magnitude of the remnant disorder (misorientation of grains with respect to the underlying bulk substrate) is observed to increase with both implant dose and original amorphous-layer thickness and to exhibit a slight implant-mass dependence. Although the recrystallization behaviour is qualitatively similar for all species studied, certain species (mainly those soluble in silicon) are found to influence the regrowth process at low implant concentrations. It is suggested that stress/strain effects, attributed to high implanted concentrations, play a major role in the inhibition of epitaxial silicon recrystallization but that species effects can become dominant at lower implant concentrations.

ISSN:0033-7579    

DOI:10.1080/00337577808233173

出版商:Taylor & Francis Group    

年代:1978

数据来源: Taylor