摘要:

Presented in this work are the results of investigation of the structure and electrophysical properties of amorphous carbon films. The films were produced by sputtering of graphite by ion beam and usin ion irradiation (E=0–200 eV) during condensation process. The structure of i-C films has been studied by means of transmission electron microscope. The electron diffraction data have been interpretated by employing the calculated interference function of carbon clusters. The structure of V-band was obtained from AES by deconvolution method. Experimental data shows that under ion irradiation the transformation of short range order and electron bonds is an oscillating function of ion energy E. This paper presents a theoretical calculation of tunneling neutralization cross-section of Ar+ions on carbon surface. The process also has an oscillating dependence on ion energy. A significant importance of inelastic processes in carbon phase transformation has been revealed.

ISSN:0033-7579    

DOI:10.1080/01422448608209724

出版商:Taylor & Francis Group    

年代:1985

数据来源: Taylor

摘要:

Bombardment by Kr (3 MeV) ions of a fine powder of InN on a W substrate results in decomposition to indium and to the formation of indium tungstate In0.4WO3or InW3O9.

ISSN:0033-7579    

DOI:10.1080/01422448608209725

出版商:Taylor & Francis Group    

年代:1985

数据来源: Taylor

ISSN:0033-7579    

DOI:10.1080/01422448608209726

出版商:Taylor & Francis Group    

年代:1985

数据来源: Taylor

ISSN:0033-7579    

DOI:10.1080/01422448608209727

出版商:Taylor & Francis Group    

年代:1985

数据来源: Taylor

摘要:

Optical IR measurements of NTD-Si are presented for different fast neutron doses. The exponential dependence of the divacancy concentration and the near-edge absorption as a function of fast neutron flux is reported. Silicon one-phonon absorption, caused by the irradiation, is also increasing with the rising percentage of fast neutrons in the flux

ISSN:0033-7579    

DOI:10.1080/01422448608209728

出版商:Taylor & Francis Group    

年代:1985

数据来源: Taylor

摘要:

Based on a recent description to model radiation-induced precipitation in CuBe a simple expression is derived for the mixed dumbbell migration energy, leading to a reliable result.

ISSN:0033-7579    

DOI:10.1080/01422448608209729

出版商:Taylor & Francis Group    

年代:1985

数据来源: Taylor

摘要:

The radiation defect production and annealing processes in dislocated silicon are analysed. The character of the effect of dislocations on the radiation defect parameters is shown to depend on their nature. Taking into account the dependence determined a scheme is suggested in accordance with which the electrically active defects in Si are divided into four groups. This is useful when identifying defects of unknown nature.

ISSN:0033-7579    

DOI:10.1080/01422448608209730

出版商:Taylor & Francis Group    

年代:1985

数据来源: Taylor