摘要:

This paper deals with TLD CaSO4 : Dy irradiated at various temperatures of 25°C, 0°C,−79°C, and−195. 8°C, respectively through the self-dosing method. The TL output and the glow curve study do not show any significant variation at low temperatures.

ISSN:0033-7579    

DOI:10.1080/01422448408209677

出版商:Taylor & Francis Group    

年代:1984

数据来源: Taylor

摘要:

The excess of the channel-to-random energy losses ratio over unity in axial channeling at shallow depths is accounted for by the effect of a regular arrangement of the strings. This effect is also responsible for some other features arising in axial channeling.

ISSN:0033-7579    

DOI:10.1080/01422448408209678

出版商:Taylor & Francis Group    

年代:1984

数据来源: Taylor

摘要:

A non-crystalline Si2N2O is formed by bombardment by ∼ 1016Argon (3MeV) ions/cm2 or by ∼ 3. 2 × 1020fast neutron (E>1MeV)/cm2. The factor of ∼ 3 × 104lower fluence for heavy ions is compared to other reported values for heavy ion and fast neutron effects. The damage cross-section for Ar(3MeV) ions is 0. 03 ± 0. 01nm2and for fast neutrons approximately 10−6nm2. The non-crystalline Si2N2O has many characteristics of a glass.

ISSN:0033-7579    

DOI:10.1080/01422448408209679

出版商:Taylor & Francis Group    

年代:1984

数据来源: Taylor

摘要:

Neon bubbles have been created in stainless steel by implantation and annealing. They have been shown to behave in a similar way to helium bubbles in the same material. Apparent differences in growth rate are attributed to differences in the bubble density immediately after bubble nucleation.

ISSN:0033-7579    

DOI:10.1080/01422448408209680

出版商:Taylor & Francis Group    

年代:1984

数据来源: Taylor

摘要:

Single crystal <100> silicon was implanted with molecular oxygen with energies ranging from 80 to 240 keV in a non-channeling direction. Rutherford backscattering (RBS) analysis was used to obtain the oxygen/silicon atomic ratio depth profiles and the thickness of the buried oxide layer, for doses ranging from 1016to 1. 5 × 1018O2+/cm2. This work links the early low energy work and the more recent higher energy work, and generally excellent agreement has been obtained. The minimum energy for formation of buried silicon dioxide has been identified as 160 keV per oxygen molecule and corresponding oxygen dose of 6 × 1017O2+/cm2.

ISSN:0033-7579    

DOI:10.1080/01422448408209681

出版商:Taylor & Francis Group    

年代:1984

数据来源: Taylor

摘要:

It is shown that previos theories, for collisional sputtering of random solids, can be included in a unified formulation. The formulation, when it is extended to the near-threshold regime predicts, for oblique incidence and equal masses, threshold energies of the order of 2. 04 U, where U is a planar surface potential barrier. Some characteristic aspects of the yield expressions are also discussed.

ISSN:0033-7579    

DOI:10.1080/01422448408209682

出版商:Taylor & Francis Group    

年代:1984

数据来源: Taylor

ISSN:0033-7579    

DOI:10.1080/01422448408209683

出版商:Taylor & Francis Group    

年代:1984

数据来源: Taylor

摘要:

The relation between the amorphization processes in semiconductors under irradiation and the phenomenon of a loss instability in a system of radiation defects has been discussed.

ISSN:0033-7579    

DOI:10.1080/01422448408209684

出版商:Taylor & Francis Group    

年代:1984

数据来源: Taylor