1. |
On the nature of the defect reverse annealing in ion-implanted silicon |
|
Radiation Effects,
Volume 46,
Issue 3-4,
1980,
Page 129-132
A.V. Dvurechensky,
I.A. Ryazantsev,
Preview
|
PDF (301KB)
|
|
摘要:
The reasons resulting in the reverse annealing of the defects in ion-implanted Si layers in 550–650°C temperature range have been studied by EPR technique.
ISSN:0033-7579
DOI:10.1080/00337578008209161
出版商:Taylor & Francis Group
年代:1980
数据来源: Taylor
|
2. |
Laser irradiation effects on high dose implanted Cu and Pb in polycrystalline aluminum |
|
Radiation Effects,
Volume 46,
Issue 3-4,
1980,
Page 133-139
G. Della Mea,
L. Donà Dalle Rose,
P. Mazzoldi,
A. Miotello,
Preview
|
PDF (485KB)
|
|
摘要:
High dose implanted Cu and Pb profiles show considerable rearrangement afterQ-switched ruby laser pulse irradiation, when observed using 1.6 MeV4He+Rutherford backscattering.
ISSN:0033-7579
DOI:10.1080/00337578008209162
出版商:Taylor & Francis Group
年代:1980
数据来源: Taylor
|
3. |
The pearson IV distribution and its application to ion implanted depth profiles |
|
Radiation Effects,
Volume 46,
Issue 3-4,
1980,
Page 141-147
RobertG. Wilson,
Preview
|
PDF (1061KB)
|
|
摘要:
The Pearson IV distribution system is analyzed to determine the regions of validity for the values of the moments that produce convex, concave, more pointed than Gaussian, and more flat-topped than Gaussian distributions; the limits beyond which no significant change in distribution is produced; and excluded regions. These regions are illustrated in a figure that can be used to facilitate the determination of the Pearson IV moments for experimental ion implanted depth distributions. Examples are given of Pearson IV distributions to illustrate the effects of the ranges of skewness, kurtosis, and standard deviation, for both more pointed and more flat-topped than Gaussian distributions. A procedure is described for matching experimental ion implanted depth distributions to computer plotted Pearson IV modified Gaussian distributions. A few experimental curves are given to illustrate the different types of Pearson IV curves, and accuracies of moments are discussed.
ISSN:0033-7579
DOI:10.1080/00337578008209163
出版商:Taylor & Francis Group
年代:1980
数据来源: Taylor
|
4. |
Effect of Cu+ion implantation on crystalline orientation in polycrystalline Cu investigated by Kr penetration measurements |
|
Radiation Effects,
Volume 46,
Issue 3-4,
1980,
Page 149-155
H.J. Smith,
G.N. Van Wyk,
Preview
|
PDF (604KB)
|
|
摘要:
A series of 7 polycrystalline Cu targets was bombarded with successively increased doses of 40 keV Cu+ions. Afterwards a trace amount of 40 keV radioactive85Kr+was injected into each target. The penetration of the Kr in the targets was then investigated by sequential 5 keV Ar+ion sputtering and radioactivity counting. The results reveal that the penetration of the Kr increases systematically with dose of Cu prebombardment. This implies an enhanced probability of channelling due to a crystallographic reorientation of material in the surface layers. This finding corroborates X-ray diffractometer measurements which show an increase with dose of material with a <110> orientation perpendicular to the surface.
ISSN:0033-7579
DOI:10.1080/00337578008209164
出版商:Taylor & Francis Group
年代:1980
数据来源: Taylor
|
5. |
On self-diffusion in silicon and germanium |
|
Radiation Effects,
Volume 46,
Issue 3-4,
1980,
Page 157-161
J.C. Bourgoin,
M. Lannoo,
Preview
|
PDF (333KB)
|
|
摘要:
The experimental results concerning self-diffusion in Si and Ge are discussed. We note, using recent direct experimental data, that there is no temperature variation of the activation energy for self-diffusion, as it was postulated by Seeger and coworkers.
ISSN:0033-7579
DOI:10.1080/00337578008209165
出版商:Taylor & Francis Group
年代:1980
数据来源: Taylor
|
6. |
Atomic collision processes in sputtering |
|
Radiation Effects,
Volume 46,
Issue 3-4,
1980,
Page 163-165
I. Reid,
M.W. Thompson,
B.W. Farmery,
Preview
|
PDF (233KB)
|
|
摘要:
The time-of-flight spectra of sputtered atoms from gold crystals bombarded with 20 keV Ar+ions are reported. The discussion shows the effect of channelling, direct and once-deflected recoils from the surface and focused collisions along <110> and <100> directions.
ISSN:0033-7579
DOI:10.1080/00337578008209166
出版商:Taylor & Francis Group
年代:1980
数据来源: Taylor
|
7. |
Atom-atom collision cascades localization |
|
Radiation Effects,
Volume 46,
Issue 3-4,
1980,
Page 167-173
V.V. Kirsanov,
Preview
|
PDF (520KB)
|
|
摘要:
The presence of an impurity and thermal vibration influence on the atom-atom collision cascade development is analysed by the computer simulation method (the modificated dynamic model). It is discovered that the relatively low energetic cascades are localized with the temperature increase of an irradiated crystal. On the basis of the given effect the mechanism of splitting of the high energetic cascades into subcascades is proposed. It accounts for two factors: the primary knocked atom energy and the irradiated crystal temperature. Introduction of an impurity also localizes the cascades independently from the impurity atom mass. The cascades localization leads to intensification of the process of annealing in the cascades and reduction of the post-cascade vacancy cluster sizes.
ISSN:0033-7579
DOI:10.1080/00337578008209167
出版商:Taylor & Francis Group
年代:1980
数据来源: Taylor
|
8. |
Energy deposition from an anisotropic point source in an infinite medium |
|
Radiation Effects,
Volume 46,
Issue 3-4,
1980,
Page 175-180
F. Khalafi,
M.M. R. Williams,
Preview
|
PDF (351KB)
|
|
摘要:
Using a simple model of scattering we have obtained an exact solution of the transport equation for a point anisotropic source in an infinite, homogeneous medium. The energy deposition function is derived and numerically evaluated for values of mass ratio (target/projectile) equal to 0.2, 0.4, 0.6, 0.8, 1,2,5 and 10. The results show the marked anisotropy of the distribution as the mass ratio decreases. We have also derived an expression for the fraction of energy deposited in the mediumz<0 as a function of the radial co-ordinate (x2+ y2)1/2. This function is useful for studying the region of influence of the energy sputtered from a point source.
ISSN:0033-7579
DOI:10.1080/00337578008209168
出版商:Taylor & Francis Group
年代:1980
数据来源: Taylor
|
9. |
On the net recoil density |
|
Radiation Effects,
Volume 46,
Issue 3-4,
1980,
Page 181-188
K.B. Winterbon,
Preview
|
PDF (609KB)
|
|
摘要:
The net recoil density introduced here is defined to be the number density of interstitials minus the number density of vacancies resulting from ion implantation. It is positive at large depths (excess interstitials) and negative at small depths (excess vacancies). At the target surface it has anX−1/2singularity, so many moments are needed in constructing the density, and a new method had to be devised to do so. In polyatomic targets, comparison of the net recoil densities of the target constituents gives the depth dependence of changes in target stoichiometry, and perhaps changes in near-surface composition from sputtering.
ISSN:0033-7579
DOI:10.1080/00337578008209169
出版商:Taylor & Francis Group
年代:1980
数据来源: Taylor
|
10. |
Formation of mesonic atoms in mixtures of the lightest elements |
|
Radiation Effects,
Volume 46,
Issue 3-4,
1980,
Page 189-198
G.Ya. Korenman,
S.I. Rogovaya,
Preview
|
PDF (794KB)
|
|
摘要:
The kinetics of formation of mesonic atoms in gaseous mixtures is considered. It has been shown that the ratio of the probabilities for the atomic capture of mesons by various elements may depend nonlinearly upon the ratio of concentration of the elements.
ISSN:0033-7579
DOI:10.1080/00337578008209170
出版商:Taylor & Francis Group
年代:1980
数据来源: Taylor
|