1. |
UV laser photopolymerization of volatile surface‐adsorbed methyl methacrylate |
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Applied Physics Letters,
Volume 42,
Issue 12,
1983,
Page 997-999
J. Y. Tsao,
D. J. Ehrlich,
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摘要:
The localized UV laser photopolymerization of surface‐adsorbed methyl methacrylate has been used to deposit poly(methyl methacrylate) films for direct patterning of wet and dry chemical etching processes. Using this negative resist process, submicrometer linewidths both in the polymer deposition and in pattern transfer into Si and SiO2have been demonstrated. The chemical kinetics of simple and catalyzed photopolymerization have been studied by dynamic lensing experiments and modeled as a dynamic equilibrium between competing surface photoreactions.
ISSN:0003-6951
DOI:10.1063/1.93840
出版商:AIP
年代:1983
数据来源: AIP
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2. |
Direct measurement of the carrier leakage in an InGaAsP/InP laser |
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Applied Physics Letters,
Volume 42,
Issue 12,
1983,
Page 1000-1002
T. R. Chen,
S. Margalit,
U. Koren,
K. L. Yu,
L. C. Chiu,
A. Hasson,
A. Yariv,
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摘要:
Carrier leakage over the heterobarrier in an InGaAsP/InP laser is measured directly in a laser‐bipolar‐transistor structure. Experimental results indicate a significant amount of carrier leakage under normal laser operating conditions.
ISSN:0003-6951
DOI:10.1063/1.93841
出版商:AIP
年代:1983
数据来源: AIP
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3. |
Transient single‐longitudinal mode stabilization in double active layer GaInAsP/InP laser under high‐bit rate modulation |
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Applied Physics Letters,
Volume 42,
Issue 12,
1983,
Page 1003-1005
W. T. Tsang,
N. A. Olsson,
R. A. Logan,
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摘要:
We propose and demonstrate the operation of a new 1.3‐&mgr;m wavelength GaInAsP semiconductor laser: the double active layer (DAL) crescent laser and compared its device performances with regular single active layer (SAL) crescent laser fabricated under similar procedures. While the regular SAL crescent lasers (∼250 &mgr;m cavity) tested were in general multilongitudinal moded, the DAL crescent lasers (both 300 and 125 &mgr;m) were highly single‐longitudinal moded for the entire current range tested (up to 3Ith), even under transient fast pulse excitation (high‐bit rate modulation) and showed stability to mode hopping. DAL crescent lasers with short cavity (∼125 &mgr;m) operated stably in the same single‐longitudinal mode under fast constant current pulse excitation at all time starting from the onset of optical pulse and approach the characteristics of distributed Bragg reflector lasers in spectral purity and stability.
ISSN:0003-6951
DOI:10.1063/1.93842
出版商:AIP
年代:1983
数据来源: AIP
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4. |
Optimization of electrically excited XeF(C→A) laser performance |
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Applied Physics Letters,
Volume 42,
Issue 12,
1983,
Page 1006-1008
W. L. Nighan,
Y. Nachshon,
F. K. Tittel,
W. L. Wilson,
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摘要:
Significantly improved output power and spectral characteristics have been obtained for an electron beam‐pumped XeF(C→A) laser by selective tailoring of kinetic processes. Using a high pressure Ar‐Xe mixture containing both NF3and F2in combination, a laser pulse energy density of 0.1 J/l was obtained corresponding to an electrical‐optical conversion efficiency of approximately 0.1%. Modeling of kinetic processes and analysis of laser spectral output confirm that the improved laser efficiency is primarily a consequence of reduced absorption by Xe‐related excited species.
ISSN:0003-6951
DOI:10.1063/1.93843
出版商:AIP
年代:1983
数据来源: AIP
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5. |
High‐pressure high‐current transversely excited Sr+recombination laser |
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Applied Physics Letters,
Volume 42,
Issue 12,
1983,
Page 1008-1010
M. S. Butler,
J. A. Piper,
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摘要:
Operation of a transversely excited Sr+recombination laser at buffer gas (He) pressures up to 1300 Torr and discharge current densities up to 103A/cm2is reported. Specific energy densities on the &lgr;430.5‐nm Sr+line exceed 50 &mgr;J/cm3for the 30‐cm3active volume device with no fundamental limitations observed. Double‐pulse experiments indicate pulse repetition frequencies near 1 MHz may be possible.
ISSN:0003-6951
DOI:10.1063/1.93844
出版商:AIP
年代:1983
数据来源: AIP
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6. |
Stimulated bremsstrahlung masers |
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Applied Physics Letters,
Volume 42,
Issue 12,
1983,
Page 1011-1012
A. J. Palmer,
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摘要:
Interferometer measurements of the dielectric constant of the cathode‐region plasma of a helium glow discharge yield a null result for the stimulated bremsstrahlung gain coefficient for 75–95‐GHz radiation in contradiction to recently reported single‐pass gain measurements. Physical arguments supportive of the results are presented.
ISSN:0003-6951
DOI:10.1063/1.93845
出版商:AIP
年代:1983
数据来源: AIP
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7. |
Picosecond optical pulse generation by impulse train current modulation of a semiconductor laser |
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Applied Physics Letters,
Volume 42,
Issue 12,
1983,
Page 1012-1014
R. A. Elliott,
Huang DeXiu,
R. K. DeFreez,
J. M. Hunt,
P. G. Rickman,
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摘要:
Optical pulses of less than 10‐ps duration have been generated by driving a GaAlAs laser with a train of 80‐ps full width at half‐maximum current impulses and a 20‐ns pulsed square wave bias.
ISSN:0003-6951
DOI:10.1063/1.93846
出版商:AIP
年代:1983
数据来源: AIP
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8. |
Integrated surface acoustic wave/field‐effect transistor high‐speed analog memory |
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Applied Physics Letters,
Volume 42,
Issue 12,
1983,
Page 1015-1017
J. B. Green,
G. S. Kino,
J. T. Walker,
J. D. Shott,
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摘要:
A totally monolithic buffer memory has been demonstrated whose operation is governed by the interaction between surface acoustic waves and an integrated multiplexed field‐effect transistor array. The device is based on ZnO on Si surface acoustic wave technology with the field‐effect transistor array being fabricated using a standard negative metal‐oxide‐semiconductor processing schedule. Experimental results are presented which show the low‐speed readout of rf modulated waveforms (f0≊100 MHz), previously stored in the device.
ISSN:0003-6951
DOI:10.1063/1.93847
出版商:AIP
年代:1983
数据来源: AIP
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9. |
Thermoelastic hologram for focused ultrasound |
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Applied Physics Letters,
Volume 42,
Issue 12,
1983,
Page 1018-1020
R. J. von Gutfeld,
D. R. Vigliotti,
C. S. Ih,
W. R. Scott,
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摘要:
An acoustic holographic lens structure is described for generating thermoelastic waves from the energy of absorbed laser excitation. The structure uses a large area optically absorbing surface to permit the megahertz ultrasound to be focused for nondestructive evaluation applications. Experimental results for the spatial distribution of 10‐MHz ultrasonic waves obtained from the hologram are presented.
ISSN:0003-6951
DOI:10.1063/1.93826
出版商:AIP
年代:1983
数据来源: AIP
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10. |
Solid phase epitaxial regrowth of amorphous silicon on molecular beam epitaxial silicon/Si layers |
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Applied Physics Letters,
Volume 42,
Issue 12,
1983,
Page 1021-1023
A. Christou,
B. R. Wilkins,
J. E. Davey,
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摘要:
The recrystallization and epitaxial regrowth of amorphous silicon layers on molecular beam epitaxial (MBE) silicon at 650 °C is described. MBE silicon layers were deposited at 650 °C followed by deposition of amorphous layers at 100–400 °C. Subsequent solid phase epitaxial regrowth of these layers has been achieved at 650 °C.
ISSN:0003-6951
DOI:10.1063/1.93827
出版商:AIP
年代:1983
数据来源: AIP
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