1. |
TIME DEPENDENCE IN THE THERMAL BLOOMING OF LASER BEAMS |
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Applied Physics Letters,
Volume 12,
Issue 8,
1968,
Page 241-243
R. L. Carman,
P. L. Kelley,
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摘要:
The time dependence of the thermal defocusing of a laser beam has been studied. Under certain conditions the beam is found to expand linearly with time, under others it expands with a time dependence approachingt1/2.
ISSN:0003-6951
DOI:10.1063/1.1651973
出版商:AIP
年代:1968
数据来源: AIP
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2. |
COMMENTS ON CORRELATION BETWEEN ELECTROLUMINESCENCE AND ELECTRON EMISSION OF THIN METAL‐OXIDE‐METAL SANDWICHES |
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Applied Physics Letters,
Volume 12,
Issue 8,
1968,
Page 243-244
H. Kanter,
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摘要:
It is shown experimentally that only at ``larger'' field strengths is the electron current from cold‐cathode Al&sngbnd;Al2O3&sngbnd;Au structures dominated by photoelectron emission released in the top layer through electroluminescence radiation within the oxide.
ISSN:0003-6951
DOI:10.1063/1.1651974
出版商:AIP
年代:1968
数据来源: AIP
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3. |
DOPING OF SILICON BY ION IMPLANTATION |
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Applied Physics Letters,
Volume 12,
Issue 8,
1968,
Page 244-246
Tadatsugu Itoh,
Taroh Inada,
Kiyoshi Kanekawa,
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摘要:
Radiation damages created in silicon single crystals bombarded with 10‐keV aluminum ions were examined by means of electron diffraction method. A deep penetration of aluminum ion in silicon was observed, extending to 0.58 &mgr;. This penetration was depressed by removing the bombarded surface layer about 800 Å in thickness before annealing. From these results, we interpret the deep penetration as a radiation enhanced diffusion effect.
ISSN:0003-6951
DOI:10.1063/1.1651975
出版商:AIP
年代:1968
数据来源: AIP
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4. |
RAMAN LINEWIDTHS FOR STIMULATED THRESHOLD AND GAIN CALCULATIONS |
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Applied Physics Letters,
Volume 12,
Issue 8,
1968,
Page 246-248
W. R. L. Clements,
B. P. Stoicheff,
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摘要:
Linewidths in the normal Raman spectra of several liquids of interest in stimulated Raman scattering have been measured including carbon disulfide, benzene, toluene, oxygen, and nitrogen. The spectra were excited with 6328‐Å radiation from a He‐Ne laser and examined with a pressure‐scanned Fabry‐Perot interferometer.
ISSN:0003-6951
DOI:10.1063/1.1651976
出版商:AIP
年代:1968
数据来源: AIP
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5. |
HOT‐CARRIER MICROWAVE HARMONIC GENERATION |
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Applied Physics Letters,
Volume 12,
Issue 8,
1968,
Page 248-250
P. David Fisher,
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摘要:
Microwave second‐harmonic generation is observed in germanium when a microwave power density gradient exists within the sample. This second‐harmonic thermoelectric voltage is proportional to the incident microwave power for low power levels and is found to begin to saturate as the power level approaches 1 mW. This voltage could be utilized to directly measure the energy relaxation time of free charge carriers.
ISSN:0003-6951
DOI:10.1063/1.1651977
出版商:AIP
年代:1968
数据来源: AIP
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6. |
AMPLIFICATION OF ULTRASONIC WAVES UNDER DC OPERATING CONDITION IN InSb UNDER TRANSVERSE MAGNETIC FIELD |
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Applied Physics Letters,
Volume 12,
Issue 8,
1968,
Page 251-252
Hisao Hayakawa,
Makoto Kikuchi,
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摘要:
Amplification of ultrasonic waves at 225 MHz up to 20 dB has been achieved by the dc operation inn‐InSb under the transverse magnetic field at 77°K. If we assume that dc and ac mobilities have different dependence on the magnetic field, most of the characteristic features of the observed results are well explained.
ISSN:0003-6951
DOI:10.1063/1.1651978
出版商:AIP
年代:1968
数据来源: AIP
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7. |
THE OPTICAL DETECTION OF STIMULATED EMISSION IN CN AT 20‐CM WAVELENGTH |
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Applied Physics Letters,
Volume 12,
Issue 8,
1968,
Page 253-254
Kenneth M. Evenson,
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摘要:
Six of the seven allowed electric dipole transitions between the hyperfine levels of theJ= 7/2 lambda doublet in the 10th vibrational level of theA2&pgr;3/2state of CN were observed. The transitions at frequencies between 1580 and 1650 MHz occur between the more populated negative parity levels and the positive parity levels. The stimulated emission was detected by measuring an increase in the intensity of theB2&Sgr;+→X2&Sgr;+(0, 0) violet band of CN near 3875 Å.
ISSN:0003-6951
DOI:10.1063/1.1651979
出版商:AIP
年代:1968
数据来源: AIP
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8. |
EXPERIMENTAL EVIDENCE FOR INTERSTITIAL In AND Tl IN ION‐IMPLANTED SILICON |
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Applied Physics Letters,
Volume 12,
Issue 8,
1968,
Page 255-256
J. A. Davies,
L. Eriksson,
J. W. Mayer,
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摘要:
Using the channeling technique for locating foreign atoms in crystals, we have obtained direct experimental evidence of an irreversible motion of In and Tl atoms from substitutional to interstitial sites during the annealing of ion‐implanted silicon samples. Preliminary Hall measurements indicate that a corresponding transition fromp‐ ton‐type behavior also occurs in the same temperature region — viz. 525–575°C. Implantation conditions were 1–3 × 1014ions/cm2at 40 keV, with the substrate at 350–450°C to prevent lattice disorder from accumulating.
ISSN:0003-6951
DOI:10.1063/1.1651980
出版商:AIP
年代:1968
数据来源: AIP
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9. |
THERMAL PRODUCTION OF A POPULATION INVERSION IN CARBON DIOXIDE |
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Applied Physics Letters,
Volume 12,
Issue 8,
1968,
Page 257-258
E. E. Wisniewski,
M. E. Fein,
J. T. Verdeyen,
B. E. Cherrington,
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摘要:
A population inversion for the 00°1 → 10°0 (10.6 &mgr;) transition in CO2has been created by resonant collisional transfer of excitation from thermally excited N2.
ISSN:0003-6951
DOI:10.1063/1.1651981
出版商:AIP
年代:1968
数据来源: AIP
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10. |
SUPERCONDUCTIVITY IN EVAPORATED TUNGSTEN FILMS |
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Applied Physics Letters,
Volume 12,
Issue 8,
1968,
Page 259-260
S. Basavaiah,
S. R. Pollack,
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摘要:
Tungsten films were found to be superconducting at 3.2°K. Upon investigation by x‐ray and electron diffraction, a &bgr;‐W (A15) structure was evident. Superconducting tunneling studies revealed that the ratio 2&Dgr;(0)/kTcvaried from 2.32 and 3.64 and &Dgr;(T)/&Dgr;(0) vsT/Tcfollowed the BCS theory.
ISSN:0003-6951
DOI:10.1063/1.1651982
出版商:AIP
年代:1968
数据来源: AIP
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