1. |
Doubling acousto‐optic deflector resolution utilizing second‐order birefringent diffraction |
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Applied Physics Letters,
Volume 27,
Issue 10,
1975,
Page 517-518
I. C. Chang,
D. L. Hecht,
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摘要:
We have demonstrated operation of birefringent phase‐matched TeO2deflectors, utilizing the second optical diffraction order, which maintain high diffraction efficiency with doubled resolution. 1200‐spot resolution was achieved with 25‐&mgr;sec access time.
ISSN:0003-6951
DOI:10.1063/1.88290
出版商:AIP
年代:1975
数据来源: AIP
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2. |
Nonlinear steering and mixing of acoustic waves in arsenic trisulfide |
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Applied Physics Letters,
Volume 27,
Issue 10,
1975,
Page 519-521
J. M. Rouvaen,
R. Torguet,
E. Bridoux,
F. Haine,
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摘要:
Very efficient mixing has been observed between a longitudinal wave and a transverse acoustic wave propagating noncollinearly inside an arsenic trisulfide delay line. The scattering of the longitudinal wave by the transverse one has also been investigated.
ISSN:0003-6951
DOI:10.1063/1.88291
出版商:AIP
年代:1975
数据来源: AIP
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3. |
Correlation between blister skin thickness, the maximum in the damage‐energy distribution, and projected ranges of He+ions in metals: Nb |
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Applied Physics Letters,
Volume 27,
Issue 10,
1975,
Page 521-523
M. Kaminsky,
S. K. Das,
G. Fenske,
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摘要:
The skin thicknesses of blisters formed on niobium by helium‐ion irradiation at room temperature for energies from 100 to 1500 keV have been measured. The projected ranges of helium ions in Nb for this energy range were calculated using either Brice’s formalism or the one given by Schiott. For the damage‐energy distribution Brice’s formalism was used. The measured skin‐thickness values corrleate more closely with the maxima in the projected‐range probability distributions than with the maxima in the damage‐energy distributions. The results are consistent with our model for blister formation and rupture proposed earlier.
ISSN:0003-6951
DOI:10.1063/1.88292
出版商:AIP
年代:1975
数据来源: AIP
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4. |
Observation of an x‐ray shuttering mechanism utilizing acoustic interruption of the Borrmann effect |
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Applied Physics Letters,
Volume 27,
Issue 10,
1975,
Page 524-526
Allan Hauer,
S. J. Burns,
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摘要:
Observations of acoustic interruption of x‐ray transmission through a high‐quality silicon crystal with a low dislocation density are described. Borrmann x‐ray topographs are used to visualize the acoustic strain field. Meausrements were made of the variation of x‐ray transmission vs acoustic power. The possible application of this effect as a fast acousto‐optic switch mechanism is discussed.
ISSN:0003-6951
DOI:10.1063/1.88293
出版商:AIP
年代:1975
数据来源: AIP
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5. |
Backscattering of keV molecular hydrogen ions from Au surfaces |
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Applied Physics Letters,
Volume 27,
Issue 10,
1975,
Page 527-528
W. Eckstein,
H. Verbeek,
S. Datz,
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摘要:
Appreciable quantities of molecular hydrogen ions have been observed in backscattering of 5‐keV D3+from Au. At a scattering angle of 10° the D+2/D+1ratio was 5×10−2and D+3/D+1=2×10−4. The ratios decrease with increasing scattering angle, but D+2is observable at angles up to 50°.
ISSN:0003-6951
DOI:10.1063/1.88294
出版商:AIP
年代:1975
数据来源: AIP
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6. |
Electronic structure of Al and Si dissolved in transition or noble metals studied by soft x‐ray spectroscopy |
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Applied Physics Letters,
Volume 27,
Issue 10,
1975,
Page 529-531
K. Tanaka,
M. Matsumoto,
S. Maruno,
A. Hiraki,
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摘要:
K&bgr;emission spectra from Al and Si dissolved in transition (Fe and Ni) or noble (Cu) metals as dilute impurities (∼10 at.%) were investigated. In the alloys of the same host metals the spectra of Al and Si bear a striking resemblance to each other. However, there are several important differences between the shapes of the spectra from transition‐ and noble‐metal‐based alloys. All these features of the spectra can be reasonably interpreted in terms of the theoretical calculation by Terakura on the energy distribution of the local density of states of the impurity atoms.
ISSN:0003-6951
DOI:10.1063/1.88295
出版商:AIP
年代:1975
数据来源: AIP
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7. |
Integrated electro‐optic intracavity frequency modulation of double‐heterostructure injection laser |
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Applied Physics Letters,
Volume 27,
Issue 10,
1975,
Page 532-534
F. K. Reinhart,
R. A. Logan,
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摘要:
Integration of a taper‐coupled GaAs‐AlxGa1−xAs laser with a linear electro‐optic modulator permits efficient optical frequency modulation of the laser emission. The pulsed room‐temperature threshold current density of the device was 8 kA/cm2. Frequency modulation depth in excess of 15 GHz (corresponding to a wavelength shift of 0.4 A˚) was obtained with a reverse bias change of 20 V across the modulator. Conversion of frequency modulation into intensity modulation was demonstrated with a characteristic powerP0of 10 &mgr;W/MHz for 90% intensity modulation. It is shown that reduction ofP0by an order of magnitude is easily feasible.
ISSN:0003-6951
DOI:10.1063/1.88296
出版商:AIP
年代:1975
数据来源: AIP
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8. |
Observation of resonance radiation pressure on an atomic vapor |
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Applied Physics Letters,
Volume 27,
Issue 10,
1975,
Page 534-537
J. E. Bjorkholm,
A. Ashkin,
D. B. Pearson,
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摘要:
We have used the resonance radiation pressure from 40 mW of cw dye laser light propagating axially down a tube filled with sodium vapor to increase the sodium pressure (density) up to 50% over a length of 20 cm. The magnitude of the effect agrees well with measurements of the absorbed power. These observations were made with the laser tuned to the low‐frequency side of the sodiumD2resonance line; for tuning to the high‐frequency side, an additional unexplained effect leading to density decreases was observed.
ISSN:0003-6951
DOI:10.1063/1.88297
出版商:AIP
年代:1975
数据来源: AIP
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9. |
Application of scanning electron microscopy to determination of surface recombination velocity: GaAs |
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Applied Physics Letters,
Volume 27,
Issue 10,
1975,
Page 537-539
L. Jastrzebski,
J. Lagowski,
H. C. Gatos,
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摘要:
A method is reported for the determination of the surface recombination velocity by scanning electron microscopy; this method is based on an established relationship between the effective diffusion length of the minority carriers, the penetration depth of the electron beam, and the surface recombination velocity. Values of surface recombination velocity, up to about 2.5×106cm/sec were determined inn‐type GaAs with a bulk minority‐carrier lifetime of the order of 10−8–10−10sec; in GaAs, with carrier concentrations exceeding 1018cm−3, recombination velocity of about 3×106cm/sec represents a saturation value.
ISSN:0003-6951
DOI:10.1063/1.88276
出版商:AIP
年代:1975
数据来源: AIP
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10. |
Excitation of transversely excited CO2waveguide lasers |
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Applied Physics Letters,
Volume 27,
Issue 10,
1975,
Page 539-541
O. R. Wood II,
P. W. Smith,
C. R. Adams,
P. J. Maloney,
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摘要:
Using a preionization scheme based on the Malter effect, small‐signal gains ≳5%/cm at 10.6 &mgr;m ahve been produced in a 1‐mm2‐cross‐section waveguide CO2amplifier at total operating pressures of 100–760 Torr. Comparisons are made between this preionization scheme and those using electron beams.
ISSN:0003-6951
DOI:10.1063/1.88277
出版商:AIP
年代:1975
数据来源: AIP
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