1. |
Microwave power absorption by a plasma outside the electron cyclotron resonance region |
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Applied Physics Letters,
Volume 22,
Issue 3,
1973,
Page 85-86
S. Bernabei,
R. De Dionigi,
M. Fontanesi,
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摘要:
Microwave power absorption has been studied in the production of a plasma using interdigital and helical coils in conditions different from electron cyclotron resonance. It is observed that the plasma can be maintained only when resonances of the hybrid type exist in the plasma column.
ISSN:0003-6951
DOI:10.1063/1.1654572
出版商:AIP
年代:1973
数据来源: AIP
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2. |
Stimulated emission from PrCl3 |
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Applied Physics Letters,
Volume 22,
Issue 3,
1973,
Page 87-89
K.R. German,
A. Kiel,
H. Guggenheim,
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摘要:
We have investigated the fluorescent and stimulated emission properties of PrCl3as a function of the pump laser wavelength, pump power, and temperature. The previously reported laser emission at 645.2 nm has been studied at 295°K and at lower temperatures. At low temperatures we have observed stimulated emission at three new wavelengths, 616.8, 529.8, and 489.2 nm. The linewidths and lifetimes of various optical transitions have been measured and related to the observed optical gain at the above wavelengths. We have also observed stimulated output in 1&percent; Pr in LaCl3.
ISSN:0003-6951
DOI:10.1063/1.1654573
出版商:AIP
年代:1973
数据来源: AIP
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3. |
ac liquid‐crystal light valve |
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Applied Physics Letters,
Volume 22,
Issue 3,
1973,
Page 90-92
T.D. Beard,
W.P. Bleha,
S.‐Y Wong,
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摘要:
An ac‐operated liquid‐crystal light valve has been constructed and operated. The multilayer structure, consisting of a photoconductor, light‐absorbing layer, dielectric mirror, and liquid crystal, is capable of efficiently modulating a high‐intensity light beam with a comparatively weak light source. The dielectric mirror and absorbing layer provide high reflectance and optical isolation without the use of a metal mosaic reflector. The use of ac and insulated electrodes promises long lifetime. The light valve is applicable to television projection display and optical data processing.
ISSN:0003-6951
DOI:10.1063/1.1654574
出版商:AIP
年代:1973
数据来源: AIP
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4. |
Optically pumped N2O laser |
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Applied Physics Letters,
Volume 22,
Issue 3,
1973,
Page 93-94
T.Y. Chang,
O.R. Wood,
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摘要:
Laser action at 10.8 &mgr;m has been obtained in pure N2O gas at pressures up to 270 Torr by optically pumping with the 4.465‐&mgr;m line of a TEA HBr laser. Possible extension of this pumping technique to other linear three‐atomic molecules and molecules with a linear three‐atomic skeletal is discussed.
ISSN:0003-6951
DOI:10.1063/1.1654575
出版商:AIP
年代:1973
数据来源: AIP
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5. |
An efficient electrical CO2laser using preionization by ultraviolet radiation |
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Applied Physics Letters,
Volume 22,
Issue 3,
1973,
Page 95-96
O.P. Judd,
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摘要:
Investigations of a large‐volume high‐pressure pulsed electrical CO2laser that employs volumetric photopreionization of the gas by ultraviolet radiation are reported. An optical energy extraction of 40 J/literatm at 700 Torr and a conversion efficiency of 24&percent; have been obtained.
ISSN:0003-6951
DOI:10.1063/1.1654576
出版商:AIP
年代:1973
数据来源: AIP
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6. |
Backscattering study on lateral spread of implanted ions |
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Applied Physics Letters,
Volume 22,
Issue 3,
1973,
Page 97-98
Seijiro Furukawa,
Hideki Matsumura,
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摘要:
Without ambiguities due to the cutting angle of a mask edge and the annealing process, the lateral spread of implanted Kr ions into Si substrates has been directly measured by the He+backscattering technique. The experimental results show good agreement with theoretical predictions.
ISSN:0003-6951
DOI:10.1063/1.1654577
出版商:AIP
年代:1973
数据来源: AIP
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7. |
Response of edge‐ and face‐electroded pyroelectric detectors to infrared laser signals |
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Applied Physics Letters,
Volume 22,
Issue 3,
1973,
Page 99-100
M. Simhony,
A. Shaulov,
S. Lavi,
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摘要:
Expressions are given for the peak voltage responses to infrared laser signals in pyroelectric detectors with edge electrodes (EE) and face electrodes (FE). When the response is independent of the capacitanceCsof the samples, the FE detector has a much higher responsivity. When the response depends onCsand the capacitanceCiof the preamplifier input is negligible for both samples, the EE design can give only a slightly higher response (the high gain expected in the literature comes from considering the EE sample as a parallel‐plate condenser). However, whenCsEE<<Ci<<CsFE, the EE detector response is higher by a factor of &egr;l/Ci, where &egr; is the permittivity andlis the length of the edge electrodes.
ISSN:0003-6951
DOI:10.1063/1.1654578
出版商:AIP
年代:1973
数据来源: AIP
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8. |
Surface depletion of InSb by SiO and CaF2 |
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Applied Physics Letters,
Volume 22,
Issue 3,
1973,
Page 101-102
F.C. Luo,
M. Epstein,
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摘要:
Increase in resistance of thin films of InSb with thickness of vacuum‐deposited overlays of SiO and CaF2indicates surface depletion in the semiconductor. Also, the equivalent depletion depth and the net trapped charge are evaluated for the case of a CaF2insulator.
ISSN:0003-6951
DOI:10.1063/1.1654566
出版商:AIP
年代:1973
数据来源: AIP
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9. |
Electron diffusion in CdTe |
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Applied Physics Letters,
Volume 22,
Issue 3,
1973,
Page 103-105
A. Alberigi Quaranta,
V. Borsari,
C. Jacoboni,
G. Zanarini,
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摘要:
Electron diffusion as a function of applied field has been studied for CdTe at 300°K with the Monte Carlo technique. The high energy separation between central and satellite valleys makes the limitations on the use of the macroscopic equation of diffusion particularly severe. At fields around the threshold value for negative differential mobility, polar optical scattering produces uneven initial spreading of a delta distribution of electrons. Furthermore, at fields around and above threshold the large spread of electron velocities causes an initial diffusion much greater than that predicted by the macroscopic equation. This latter effect may be very important in small devices as, in particular, in the dynamics of Gunn domains.
ISSN:0003-6951
DOI:10.1063/1.1654567
出版商:AIP
年代:1973
数据来源: AIP
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10. |
Trap structure of pyrolytic Al2O3in MOS capacitors |
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Applied Physics Letters,
Volume 22,
Issue 3,
1973,
Page 106-107
E. Harari,
B.S.H. Royce,
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摘要:
The trap structure of the pyrolytic Al2O3layer of MOS capacitors was investigated by a technique in which the capacitor was used as an integral detector of the charge trapped in the oxide. In all the samples studied, five trap levels were found to exist extending from 2.2 to 4.5 eV below the oxide conduction band. The spatial distribution of these traps was inferred from complementary photoconductivity measurements. This method is applicable to the study of the effects of radiation damage and ion implantation on the trap structure of this and other thin film insulators.
ISSN:0003-6951
DOI:10.1063/1.1654568
出版商:AIP
年代:1973
数据来源: AIP
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