1. |
High‐barrier cluster‐free AlxGa1−xAs‐AlAs‐GaAs quantum‐well heterostructure laser |
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Applied Physics Letters,
Volume 38,
Issue 2,
1981,
Page 63-65
J. J. Coleman,
P. D. Dapkus,
W. D. Laidig,
B. A. Vojak,
N. Holonyak,
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摘要:
Laser data (77 and 300 K) are presented on an AlxGa1−xAs‐AlAs‐GaAs quantum‐well heterostructure (QWH) grown by metalorganic‐chemical vapor deposition with an active region consisting of 13 AlAs barrier layers of sizeLB∼10 A˚ and 12 GaAs quantum wells of sizeLz∼50 A˚. This QWH, which is free of alloy disorder and clustering (Al‐Ga clusters) in the active region, emits on the confined particle transitions and not at the lower energies characteristic of QWH’s with AlxGa1−xAs barrier layers (and Al‐Ga clusters).
ISSN:0003-6951
DOI:10.1063/1.92261
出版商:AIP
年代:1981
数据来源: AIP
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2. |
High–gain CO2laser |
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Applied Physics Letters,
Volume 38,
Issue 2,
1981,
Page 65-66
Hiroshi Hara,
Akira Fujisawa,
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摘要:
A high‐gain N2‐CO2energy transfer laser using a conical nozzle is described. A small‐signal gain of 11 m−1was obtained at a static pressure of 18.3 Torr. In addition, an output power of 4 W was delivered from an 1.2‐cm active length.
ISSN:0003-6951
DOI:10.1063/1.92262
出版商:AIP
年代:1981
数据来源: AIP
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3. |
Bistable reflection of light by an electro‐optically driven interface |
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Applied Physics Letters,
Volume 38,
Issue 2,
1981,
Page 67-69
Alexander E. Kaplan,
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摘要:
A theory of nonresonant optical bistability, based on ’’hybrid’’ interface effect, is developed. This effect occurs upon reflection of light at a single interface of a medium driven by electro‐optical feedback. The nonlinear Snell’s and Fresnel’s formulas for the transmission regime are obtained, as well as conditions for bistable operation. The stability of steady states and characteristics of hysteresis jumps are examined as well.
ISSN:0003-6951
DOI:10.1063/1.92263
出版商:AIP
年代:1981
数据来源: AIP
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4. |
Measurement of recombination coefficient in a transverse electric atmospheric CO2laser gas discharge |
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Applied Physics Letters,
Volume 38,
Issue 2,
1981,
Page 69-71
U. Nundy,
N. S. Shikarkhane,
U. K. Chatterjee,
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摘要:
The product of recombination coefficient and instantaneous electron density (&ggr;ne, was measured for a UV‐preionized discharge operating at atmospheric pressure for a gas mixture containing CO2, N2, and He in the ratio 1:1:8, over a range of operating field (E/N) from 0.5×10−16V cm2to 6.0×10−16V cm2. This data is used in a computer program to simulate the discharge. Good agreement is observed between experimental current and voltage with those predicted by the program. It was also found that the pulse shapes are critically dependent on &ggr;neand this must be accurate to be useful in predicting the behavior of UV‐preionized discharges.
ISSN:0003-6951
DOI:10.1063/1.92251
出版商:AIP
年代:1981
数据来源: AIP
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5. |
3.4‐TW performance of a Nd:phosphate glass laser with output aperture of 20 cm |
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Applied Physics Letters,
Volume 38,
Issue 2,
1981,
Page 72-73
Y. Kato,
K. Yoshida,
J. Kuroda,
C. Yamanaka,
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摘要:
A Nd: doped phosphate glass disk amplifier can be scaled to the aperture of 20 cm with the &agr;Lproduct of 4.0. A laser amplifier chain using these high‐gain disk amplifiers has delivered output power of 3.4 TW at a pulse width of 100 ps. A very good beam quality has been obtained because of the cleanliness of the optical components.
ISSN:0003-6951
DOI:10.1063/1.92252
出版商:AIP
年代:1981
数据来源: AIP
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6. |
Selectively emissive refractory metal surfaces |
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Applied Physics Letters,
Volume 38,
Issue 2,
1981,
Page 74-76
H. G. Craighead,
R. E. Howard,
D. M. Tennant,
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摘要:
In this letter is decribed a spectrally selective tungsten light‐emitting surface, employing submicron surface texturing produced by reactive ion etching. The average emissivity of this surface throughout the visible wavelength range of 0.3–0.7 &mgr;m is greater than 0.9 compared to ∼0.4 for ordinary tungsten. At longer infrared wavelengths, however, the emissivity of the etched surface approaches that of a smooth tungsten surface. This results in enhanced efficiency in the production of visible light.
ISSN:0003-6951
DOI:10.1063/1.92253
出版商:AIP
年代:1981
数据来源: AIP
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7. |
Single‐mode diode laser phase noise |
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Applied Physics Letters,
Volume 38,
Issue 2,
1981,
Page 77-78
A. Dandridge,
A. B. Tveten,
R. O. Miles,
D. A. Jackson,
T. G. Giallorenzi,
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摘要:
Measurements have been made of the phase noise of a single‐mode diode laser in an unbalanced Michelson interferometer, as a function of optical path difference. The noise increased linearly with increasing optical path difference. The origin of the phase noise is discussed.
ISSN:0003-6951
DOI:10.1063/1.92254
出版商:AIP
年代:1981
数据来源: AIP
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8. |
Absorption spectra of garnet films between 1.0 and 1.8 &mgr;m by guided‐wave optical spectroscopy |
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Applied Physics Letters,
Volume 38,
Issue 2,
1981,
Page 79-81
Michel Olivier,
Jean‐Claude Peuzin,
Jean‐Se´bastien Danel,
Didier Challeton,
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摘要:
Continuous recording of the absorption spectra of thin films by an optical guided‐wave technique is demonstrated. In the case of a garnet thin film of compositoin (YSmLuCa)3(FeGe)5O12it is shown that the near‐infrared Sm3+absorption bands are clearly visible in contrast with conventional transmission measurement. Comparison with the absorption spectrum of bulk Sm3Fe5O12garnet allows the determination of an Sm concentration in the film.
ISSN:0003-6951
DOI:10.1063/1.92255
出版商:AIP
年代:1981
数据来源: AIP
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9. |
Backscatter of CO2laser light from an overdenseZ‐pinch plasma |
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Applied Physics Letters,
Volume 38,
Issue 2,
1981,
Page 82-84
C. J. Walsh,
J. Meyer,
B. Hilko,
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摘要:
A mode‐locked train of CO2laser pulses, 2.5‐nsec wide with 14.6 nsec between pulses, has been focused into an overdenseZ‐pinch plasma at vacuum intensities up to 2×1012W cm−2. Backscatter through thef/5 lens has been observed to grow from a large noise level which is not present in the absence of the laser, and saturate at a value ∼ 4%.
ISSN:0003-6951
DOI:10.1063/1.92256
出版商:AIP
年代:1981
数据来源: AIP
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10. |
Merocyanine‐dye photovoltaic cell on a plastic film |
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Applied Physics Letters,
Volume 38,
Issue 2,
1981,
Page 85-86
T. Moriizumi,
K. Kudo,
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摘要:
A flexible photovoltaic cell was produced by depositing a merocyanine‐dye layer on a transparent electro‐conducting film, which is a polyester film coated with ITO (indium‐tin oxide). Two kinds of the layered structures on the films were examined; i.e., Al/merocyanine/ITO and Ag/merocyanine/ZnO/ITO structures. It was found that the latter structure was more promising for a solar cell because of a considerably better output stability and a higher conversion effiency.
ISSN:0003-6951
DOI:10.1063/1.92264
出版商:AIP
年代:1981
数据来源: AIP
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