1. |
Amplified phase conjugate reflection of KrF laser radiation |
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Applied Physics Letters,
Volume 39,
Issue 11,
1981,
Page 855-857
R. G. Caro,
M. C. Gower,
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摘要:
We report amplified phase conjugate reflection of KrF laser radiation at 249 nm using degenerate four‐wave mixing in a solution of rhodamine 6G in ethanol. Reflectivities of ∼300% have been measured. Saturation of the reflectivity at high probe intensities was observed and the temporal dependence of the reflectivity has been investigated. The importance of mutual coherence of the probe and pump for the thermally induced nonlinearity involved in the process has been demonstrated.
ISSN:0003-6951
DOI:10.1063/1.92610
出版商:AIP
年代:1981
数据来源: AIP
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2. |
Sub‐Doppler submillimeter spectroscopy using molecular beams |
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Applied Physics Letters,
Volume 39,
Issue 11,
1981,
Page 857-859
W. A. M. Blumberg,
D. D. Peck,
H. R. Fetterman,
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摘要:
The use of corner‐cube mounted Schottky diodes to generate tunable submillimeter laser sidebands, which have a linewidth less than 10 kHz, has recently been reported. In order to demonstrate the ultrahigh resolution of the sideband generation technique, rotational transitions with sub‐Doppler linewidths have been observed in molecular beams formed by capillary arrays.
ISSN:0003-6951
DOI:10.1063/1.92611
出版商:AIP
年代:1981
数据来源: AIP
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3. |
The effect of cavity length on picosecond pulse generation with highly rf modulated AlGaAs double heterostructure lasers |
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Applied Physics Letters,
Volume 39,
Issue 11,
1981,
Page 860-861
G. J. Aspin,
J. E. Carroll,
R. G. Plumb,
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摘要:
We report the generation of picosecond pulses with oxide‐isolated‐stripe, double heterostructure GaAlAs laser diodes of varying lengths. A pulse width of 15 ps at a repetition frequency of 1 GHz is achieved with a 60‐&mgr;m‐long device. The experiments indicate a linear relation between pulse width and laser length.
ISSN:0003-6951
DOI:10.1063/1.92612
出版商:AIP
年代:1981
数据来源: AIP
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4. |
Autosynchronized pulse generation at multiple wavelengths |
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Applied Physics Letters,
Volume 39,
Issue 11,
1981,
Page 862-864
P. Rabinowitz,
B. Perry,
A. Gnauck,
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摘要:
Efficient autosynchronization of Raman scattered Stokes pulses of different wavelengths is obtained from a hydrogen filled multiple pass cell. The phenomenon is initiated by colinear four‐wave mixing and develops through Raman scattering at ray crossings within the cell structure.
ISSN:0003-6951
DOI:10.1063/1.92588
出版商:AIP
年代:1981
数据来源: AIP
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5. |
Absorption and stimulated emission in an AlAs‐GaAs superlattice |
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Applied Physics Letters,
Volume 39,
Issue 11,
1981,
Page 864-866
J. J. Coleman,
P. D. Dapkus,
D. R. Clarke,
M. D. Camras,
N. Holonyak,
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摘要:
Absorption and stimulated‐emission data (77 and 300 K) are presented on a 50‐period, all binary A1As‐GaAs superlattice (SL) grown by metalorganic chemical vapor deposition (MO‐CVD). Laser operation of the SL is observed &Dgr;E∼h&slash;&ohgr;LObelow the absorption, which corresponds accurately to the lowest confined‐particle transistions determined from themeasured(transmission electron microscope, TEM) barrier and well sizes of LB∼120 A˚ and Lz∼160 A˚.
ISSN:0003-6951
DOI:10.1063/1.92613
出版商:AIP
年代:1981
数据来源: AIP
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6. |
Generation of subpicosecond pulses from an actively mode locked GaAs laser in an external ring cavity |
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Applied Physics Letters,
Volume 39,
Issue 11,
1981,
Page 867-869
J. P. van der Ziel,
R. A. Logan,
R. M. Mikulyak,
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摘要:
We report the active mode locking of the emission from a GaAs buried optical guide laser in an external ring cavity. The two counter rotating pulses interact in the laser which in addition to the gain medium contains a saturable absorber at one facet introduced by proton bombardment at 600 keV with a 3×1015cm−2dosage level. Bursts of pulses with 0.56 psec FWHM at a 625‐MHz repetition rates have been obtained.
ISSN:0003-6951
DOI:10.1063/1.92614
出版商:AIP
年代:1981
数据来源: AIP
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7. |
Optical Ramsey fringes: Effect of velocity averaging on fringe shape and position |
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Applied Physics Letters,
Volume 39,
Issue 11,
1981,
Page 869-871
G. P. Bava,
A. De Marchi,
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摘要:
A theoretical analysis of Ramsey fringes produced by the interaction of a molecular beam and a three‐zones electromagnetic resonator is reported. After averaging over the longitudinal velocity distribution of the particles, the relation between the fringe envelope width and the velocity distribution width is discussed. If the second‐order Doppler shift is introduced, the fringe envelope displacement is found to be of the same amount expected for the second‐order Doppler effect, but in the opposite direction. This analysis can be of some interest for the discussion of the performance of beam frequency standards in the near optical region.
ISSN:0003-6951
DOI:10.1063/1.92615
出版商:AIP
年代:1981
数据来源: AIP
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8. |
Longitudinal mode behavior of PbSnTe buried heterostructure lasers |
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Applied Physics Letters,
Volume 39,
Issue 11,
1981,
Page 872-874
D. Kasemset,
C. G. Fonstad,
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摘要:
Output spectra for narrow stripe, PbSnTe buried heterostructure laser diodes are presented and it is shown that the lasers operate in a single longitudinal mode of the fundamental transverse mode family to approximately twice threshold after which multimode operation predominates. These observations are interpreted in terms of the spectral inhomogeneity of the gain function. The small inhomogeneity arises from an intraband relaxation time of the order of 2 ps.
ISSN:0003-6951
DOI:10.1063/1.92589
出版商:AIP
年代:1981
数据来源: AIP
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9. |
Deterministic passive mode locking of solid‐state lasers |
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Applied Physics Letters,
Volume 39,
Issue 11,
1981,
Page 875-877
Oscar Eduardo Marti´nez,
Luis Alfonso Spinelli,
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摘要:
An additional passive modulation is inserted in the cavity of a passive mode‐locked Nd:glass laser in order to provide the conditions for a complete selectivity of the system. A rate equation approach shows that a stationary condition is reached in which only one pulse of the original fluctuation pattern is left. Computed simulations and experimental results are also shown confirming the theoretical predictions.
ISSN:0003-6951
DOI:10.1063/1.92590
出版商:AIP
年代:1981
数据来源: AIP
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10. |
Aluminum nitride on silicon surface acoustic wave devices |
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Applied Physics Letters,
Volume 39,
Issue 11,
1981,
Page 878-879
L. G. Pearce,
R. L. Gunshor,
R. F. Pierret,
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摘要:
Reactive rf planar magnetron sputtering has been used at substrate temperatures below 300 °C to deposit highly oriented piezoelectric AlN films on silicon for surface acoustic wave device applications. The substrates were (100)‐oriented,n‐type silicon with and without a thermally grown oxide. Several new AlM‐on‐silicon surface acoustic wave devices were fabricated and tested. The devices reported herein include two‐port delay lines, degenerate monolithic convolvers, and two‐port surface acoustic wave resonators utilizing metal strip reflector arrays.
ISSN:0003-6951
DOI:10.1063/1.92591
出版商:AIP
年代:1981
数据来源: AIP
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