11. |
LATTICE EXPANSION AND STRAIN IN ION‐BOMBARDED GaAs AND SI |
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Applied Physics Letters,
Volume 17,
Issue 9,
1970,
Page 378-380
R. E. Whan,
G. W. Arnold,
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摘要:
Measurements of the surface topography of ion‐bombarded GaAs and Si show a marked elevation of the irradiated portion of the surface relative to the surrounding unirradiated material. The average lattice atom displacement brought about by the expansion can cause anomalously high yields of displaced atoms as measured by backscattering of particles incident along channeling directions.
ISSN:0003-6951
DOI:10.1063/1.1653443
出版商:AIP
年代:1970
数据来源: AIP
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12. |
HOLOGRAPHIC RECORD OF POLARIZATION IN VOLUME HOLOGRAM |
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Applied Physics Letters,
Volume 17,
Issue 9,
1970,
Page 381-382
S. C. Som,
R. A. Lessard,
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摘要:
It is pointed out that volume holograms can be successfully used to store and retrieve informations about the state of polarization of a wave field. Supporting experimental results, which were obtained with a polarized wave field caused by stress birefringence, are presented.
ISSN:0003-6951
DOI:10.1063/1.1653444
出版商:AIP
年代:1970
数据来源: AIP
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13. |
VACUUM ULTRAVIOLET LASER EMISSION FROM MOLECULAR HYDROGEN |
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Applied Physics Letters,
Volume 17,
Issue 9,
1970,
Page 383-384
R. W. Waynant,
J. D. Shipman,
R. C. Elton,
A. W. Ali,
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摘要:
Using a short‐risetime traveling‐wave discharge system, lasing has been produced in molecular hydrogen in the 1600‐Å region and confirmed by direct observation of extensive amplification in the direction of travel. Pulsewidths and powers on the order of 1 nsec and hundreds of kilowatts, respectively, are observed. The ten H2lines resolved extend from 1567 to 1613 Å in the Lyman band. The laser lines originate from transitions between the vibrational levels of the stateB(2p&sgr;1&Sgr;u+)and the higher vibrational levels of the ground stateX(1s1&Sgr;g+).
ISSN:0003-6951
DOI:10.1063/1.1653445
出版商:AIP
年代:1970
数据来源: AIP
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14. |
A CURRENT VOLTAGE TECHNIQUE FOR OBTAINING LOW‐FREQUENCYC‐VCHARACTERISTICS OF MOS CAPACITORS |
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Applied Physics Letters,
Volume 17,
Issue 9,
1970,
Page 384-386
W. K. Kappallo,
J. P. Walsh,
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摘要:
A simple technique for the measurement of low‐frequency capacitance‐voltage characteristics of MOS capacitors utilizing the current response of these devices to slow linear voltage ramps is described. The capability of this technique is demonstrated in representativeC‐Vcurves showing the effects of temperature, frequency, and light on the MOS characteristics.
ISSN:0003-6951
DOI:10.1063/1.1653446
出版商:AIP
年代:1970
数据来源: AIP
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15. |
cw HF ELECTRIC‐DISCHARGE MIXING LASER |
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Applied Physics Letters,
Volume 17,
Issue 9,
1970,
Page 386-388
J. J. Hinchen,
C. M. Banas,
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摘要:
Continuous chemical laser operation was observed with HF and DF in a system in which fluorine atoms produced in a glow discharge in SF6are mixed with hydrogen in a subsonic flow region upstream of a transverse optical cavity. A maximum power output of 5.5 W was obtained and measurements of the output spectral distribution were made.
ISSN:0003-6951
DOI:10.1063/1.1653447
出版商:AIP
年代:1970
数据来源: AIP
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16. |
HIGH‐POWER CO2ELECTRIC DISCHARGE MIXING LASER |
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Applied Physics Letters,
Volume 17,
Issue 9,
1970,
Page 388-391
Clyde O. Brown,
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摘要:
An electric discharge mixing laser is described in which N2is vibrationally excited in an electrical discharge and then mixed with cold CO2providing a population inversion and, consequently, lasing action at 10.6&mgr; in a high‐pressure high‐flow speed channel. Convection is the principle heat removal mechanism, permitting system operation at power densities substantially higher than in conventional wall‐dominated electric discharge lasers. Results of experiments with a 30‐cm‐wide by 1.2‐cm‐high EDML channel are described. With this system, small‐signal gain coefficients of 4.3% cm−1and optical powers of up to 900 W at 11% efficiency have been obtained at a pressure of 48 Torr.
ISSN:0003-6951
DOI:10.1063/1.1653448
出版商:AIP
年代:1970
数据来源: AIP
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17. |
ENHANCED DIFFUSION OF HIGH‐TEMPERATURE ION‐IMPLANTED ANTIMONY INTO SILICON |
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Applied Physics Letters,
Volume 17,
Issue 9,
1970,
Page 391-393
Kenji Gamo,
Kohzoh Masuda,
Susumu Namba,
Shinji Ishihara,
Itsuro Kimura,
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摘要:
Concentration profiles of 20‐keV high‐temperature ion‐implanted antimony into a silicon single crystal were measured by means of radioactivation analysis and the enhanced diffusion was observed. The concentration profiles were found to be independent of temperature over the range between 500 °C and 800 °C and to be dependent on the dose rate of ion implantation. The diffusion coefficient of antimony is estimated to be about 1.1×10−15cm2/sec for the dose rate of about 1.2×1012ions/cm2sec and about 6.6×10−15cm2/sec for that of about 7.2×1012ions/cm2sec. The measured concentration profiles are in good agreement with the calculated concentration profile. These results are explained on the basis of a vacancy mechanism.
ISSN:0003-6951
DOI:10.1063/1.1653449
出版商:AIP
年代:1970
数据来源: AIP
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18. |
MODE LOCKING OF THE CO2LASER BY INTRACAVITY PHASE MODULATION |
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Applied Physics Letters,
Volume 17,
Issue 9,
1970,
Page 393-395
M. M. Mann,
R. G. Eguchi,
W. B. Lacina,
M. L. Bhaumik,
W. H. Steier,
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摘要:
Stable mode locking of a CO2laser has been obtained with the use of a resonated internal electro‐optic phase modulator driven at frequencies near the axial‐mode interval. Pulses of 25‐nsec duration and 147‐nsec period were observed. Pulse trains at twice the fundamental mode frequency were also obtained. Stable locking was achieved with an rf input power to the modulator of less than 1 mW. Locking could be induced when the modulation frequency was within ± 130 kHz of the fundamental axial‐mode frequency.
ISSN:0003-6951
DOI:10.1063/1.1653450
出版商:AIP
年代:1970
数据来源: AIP
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19. |
Nd,Cr : YAlO3LASER TAILORED FOR HIGH‐ENERGY Q‐SWITCHED OPERATION |
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Applied Physics Letters,
Volume 17,
Issue 9,
1970,
Page 395-398
M. Bass,
M. J. Weber,
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摘要:
Spectral and pulsed laser properties of Nd3+: YAlO3crystals codopes with Cr3+are described. The anisotropic properties of yttrium orthoaluminate were used to select a laser rod orientation which maximized the energy storage capability forQ‐switched operation. It is demonstrated that ac‐axis rod of this material can produce energy outputs greater than those obtainable from the best Nd3+: YAG rods of comparable size in both long‐pulse andQ‐switched laser operation.
ISSN:0003-6951
DOI:10.1063/1.1653451
出版商:AIP
年代:1970
数据来源: AIP
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20. |
CHARACTERIZATION OF SILICON SURFACES BY THE ELECTRON ENERGY‐LOSS SPECTRUM |
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Applied Physics Letters,
Volume 17,
Issue 9,
1970,
Page 398-400
P. S. P. Wei,
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摘要:
The energy‐loss spectra of silicon during several stages of the cleaning treatment have been studied in a LEED apparatus. The results suggest that the energy‐loss spectrum is sensitive to the change in chemical composition and electronic structure of the solid surface.
ISSN:0003-6951
DOI:10.1063/1.1653452
出版商:AIP
年代:1970
数据来源: AIP
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