摘要:

We report a two‐step process for producing high‐conductance customized copper interconnections utilizing a localized electrodeposition process induced by Joule heat at a constriction. An initial metal interconnection is made by localized decomposition of an organometallic film using a focused laser beam. The conductance of such an initial interconnection can be low, but is enough to induce localized copper deposition by passing an ac current through the entire line in a copper‐containing electrolyte. The interconnections produced by this process are solid, continuous, and highly conducting.

ISSN:0003-6951    

DOI:10.1063/1.102875

出版商:AIP    

年代:1990

数据来源: AIP

摘要:

We demonstrate remarkably rapid oxidation of (100) silicon at room temperature catalyzed by the presence of Cu3Si. Thermal oxidation of Si is normally carried out at temperatures above 700 °C. Oxidation of many metal silicides occurs more rapidly than that of Si, but under controlled conditions results in a surface layer of SiO2. In contrast, the oxidation process described here produces a thick layer of SiO2underneath the copper‐rich surface layer. The SiO2layer grows spontaneously to over 1 &mgr;m in thickness in several weeks in air at room temperature. Analysis by Rutherford backscattering, Auger electron spectroscopy, cross‐sectional transmission electron microscopy, and scanning electron microscopy reveals the presence of Cu3Si at the buried SiO2/Si interface, epitaxially related to the underlying Si substrate. Catalytic action by this silicide phase appears responsible for the unusual oxidation process.

ISSN:0003-6951    

DOI:10.1063/1.103260

出版商:AIP    

年代:1990

数据来源: AIP

摘要:

Thin films of magnesia have been deposited by a novel spray pyrolysis method. An aqueous magnesium acetylacetonate solution was ultrasonically nebulized, transported in flowing oxygen, and thermally decomposed on silicon (100), sapphire, and fused silica at temperatures between 400 and 550 °C. The films were from 0.1 to 0.5 &mgr;m thick, optically transparent, and smooth. The MgO films were poorly crystalline as deposited. MgO films on sapphire crystallized with strong (100) orientation after annealing at 700 and 930 °C in flowing oxygen.

ISSN:0003-6951    

DOI:10.1063/1.103188

出版商:AIP    

年代:1990

数据来源: AIP

摘要:

We report the deposition of epitaxial films of GexSi1−xon (100) silicon by the ultrahigh vacuum chemical vapor deposition technique. Epitaxial films grown at temperatures ranging from 577 to 665 °C have been characterized with respect to growth rate and germanium content. The results show features which have not been previously reported including an incubation time and a peak in the growth rate as a function of GeH4/H2flow.

ISSN:0003-6951    

DOI:10.1063/1.102876

出版商:AIP    

年代:1990

数据来源: AIP

摘要:

We propose a novel structure for electron wave devices that utilizes the mutual coupling effect between electron wave guides. The structure consists of two parallel electron wave guides with a coupling region controlled by a gate voltage. Using simple theoretical calculations, we estimate the switching time and the coupling length required for electron transfer to be 2 ps and 0.28 &mgr;m, respectively.

ISSN:0003-6951    

DOI:10.1063/1.102877

出版商:AIP    

年代:1990

数据来源: AIP

摘要:

Hydrogen transport in low‐pressure chemical vapor deposited Si3N4has been investigated using samples consisting of a double layer of hydrogenated and deuterated nitride films. Concentration depth profiles of hydrogen and deuterium were measured using elastic recoil detection. Diffusion coefficients forDwere derived from the deuterium concentration depth profiles before and after annealing at temperatures in the range 700–1000 °C. The diffusion coefficient is characterized by an activation energy of 2.94 eV for the entire temperature range. Its value varies between 10−17cm2/s at 700 °C and 5×10−14cm2/s at 1000 °C.

ISSN:0003-6951    

DOI:10.1063/1.103261

出版商:AIP    

年代:1990

数据来源: AIP

摘要:

We have observed intensity oscillations in reflection high‐energy electron diffraction during molecular beam epitaxial growth of GaAs on (111)BGaAs substrates. These oscillations only exist over a narrow range of growth conditions and their behavior is strongly dependent on the migration kinetics of group III and the molecular dissociative reaction of group V elements.

ISSN:0003-6951    

DOI:10.1063/1.102878

出版商:AIP    

年代:1990

数据来源: AIP

摘要:

The effect of heat treatment rapid thermal annealing (RTA) or conventional thermal annealing on the electrical properties of polycrystalline silicon films implanted with boron in the intermediate concentration range is examined. A standard furnace anneal uniformly redistributes the dopant and results in an electrical activity of grain boundaries (GBs). On the contrary, a rapid thermal anneal does not activate GBs. Impurity gettering does not occur at GBs in RTA and implanted boron does not redistribute uniformly within the grains leading to a strong increase of the Hall mobility in small‐grained silicon films.

ISSN:0003-6951    

DOI:10.1063/1.102879

出版商:AIP    

年代:1990

数据来源: AIP

摘要:

The initial steps in the biological visual signal processing are the extraction of the edge position and its orientation of an object image. These edge detection capabilities can be simulated by semiconductor edge detectors. In this letter, two types of such detectors, i.e., concentric and directional ones for detecting edge and its orientation, respectively, are successfully fabricated using an amorphous silicon hydrogen alloy. The measured performance of these edge detectors is similar to that of the biological ones. A three‐dimensional image array, made by fabricating two‐dimensional amorphous silicon edge detectors on top of the single‐crystal Si very large‐scale integrated circuit is proposed, which can be used as the preprocessor of a smart vision system.

ISSN:0003-6951    

DOI:10.1063/1.102880

出版商:AIP    

年代:1990

数据来源: AIP

摘要:

Microscopic distribution of growth rates on mesa‐etched GaAs(001) wafers was measured in real time during molecular beam epitaxy growth by scanning microprobe reflection high‐energy electron diffraction. It has been observed that the growth rate on the GaAs(001) surface near the edge of (111)Asurfaces becomes larger. The exponential variation of the growth rate as a function of the distance from the edge reflects surface diffusion of Ga atoms. The diffusion length on the (001) surface is estimated to be about 1 &mgr;m at 560 °C. The relatively larger diffusion length suggests that the incorporation rate of migrating Ga atoms by steps is much smaller than unity.

ISSN:0003-6951    

DOI:10.1063/1.102881

出版商:AIP    

年代:1990

数据来源: AIP