摘要:

Majority carrier traps produced in arsenic‐doped silicon by 1.5‐MeV electron irradiation are characterized by deep level transient spectroscopy. Four traps are observed including a new defect located atEc−0.30 eV. It is also observed that oxygen plays a vital role in the annealing mechanism of the arsenic‐vacancy pair. This defect, with a level atEc−0.42 eV, has two annealing stages, the first being much faster than the second. Its first annealing stage cannot be explained by another defect superimposed upon the As‐Vpair.

ISSN:0003-6951    

DOI:10.1063/1.89127

出版商:AIP    

年代:1976

数据来源: AIP

摘要:

Cermet MgO/Au films prepared by rf sputtering are found to be highly absorbing in the solar spectrum and highly transparent in the infrared. Excellent selective absorbers, with solar absorptivity of over 0.9 and infrared emissivity of less than 0.1, have been produced by depositing such films on metal substrates. Films deposited on Mo‐coated stainless steel are stable in air up to 400 °C.

ISSN:0003-6951    

DOI:10.1063/1.89128

出版商:AIP    

年代:1976

数据来源: AIP

摘要:

We have measured the total current [a sum of the thermally stimulated current (TSC) and the pyroelectric current] released as a function of temperature at a constant heating rate for numerous samples of poly(vinylidene fluoride) (PVF2) films which were poled in an electric field under a variety of conditions. An analysis of this data reveals significant changes in the TSC curves of room‐temperature–poled PVF2samples as a function of rest time after poling. The possible relaxation processes accounting for these changes are discussed. The pyroelectric response of these films has also been determined and a pyroelectric coefficient of 2.5×10−9C/cm2 °K has been obtained for room‐temperature–poled samples.

ISSN:0003-6951    

DOI:10.1063/1.89129

出版商:AIP    

年代:1976

数据来源: AIP

摘要:

Sucrose benzoate has been used as a host for recording volume phase holograms. Diffraction efficiencies up to 75% are obtained using a variety of photosensitive guests. Fixed or self‐erasing holgrams can be obtained.

ISSN:0003-6951    

DOI:10.1063/1.89130

出版商:AIP    

年代:1976

数据来源: AIP

摘要:

A simple directional coupler using induced mode conversion has been built. The fraction of energy extracted from the fiber can easily be varied from −10 to −3 dB with an insertion loss close to the theoretical limit. This coupler can also be removed from the fiber if the derivation is no longer desired and appears then as a versatile clip‐on coupler for temporary extraction of the light travelling in the fiber.

ISSN:0003-6951    

DOI:10.1063/1.89131

出版商:AIP    

年代:1976

数据来源: AIP

摘要:

A ⟨110⟩‐oriented dark‐line defect (DLD) has been induced by mechanical bending in GaAs1−xAlxAs double‐heterostructure (DH) wafers. Both the concave upward and the convex upward bending (with the DH epitaxial layer as the upward surface) of the DH wafer has been carried out using a four‐point bending technique. The DLD formation has shown both the stress‐direction dependence and the asymmetry of the DH wafer. Photoluminescence topography has shown that the characteristics of the DLD’s are exactly the same as those of the optically induced DLD’s. From experimental results, it is conjectured that a glide‐multiplication mechanism is probably acceptable for the production of the ⟨110⟩ DLD dislocations.

ISSN:0003-6951    

DOI:10.1063/1.89132

出版商:AIP    

年代:1976

数据来源: AIP

摘要:

Thin films of Pb(Zr,Ti)O3have been fabricated on fused quartz or stainless steel substrates by an electron beam evaporation technique. The quality of the PZT films is examined by the x‐ray diffraction technique. Observation of theD‐Ehysteresis loop has shown the films to be ferroelectric. Dielectric anomaly of the film on a stainless steel substrate has been observed around 340 °C.

ISSN:0003-6951    

DOI:10.1063/1.89133

出版商:AIP    

年代:1976

数据来源: AIP

摘要:

Grating tuning the helium‐fluorine laser has led to single line output at 6967, 7037, 7128, 7202, 7311, 7489, 7755, and 7800 A˚. A study of the pressure dependence of the output intensities of these lines unambiguously identifies them as transitions between the 2s2p4(3P)3pand 2s2p4(3P)3sconfigurations of fluorine.

ISSN:0003-6951    

DOI:10.1063/1.89134

出版商:AIP    

年代:1976

数据来源: AIP

摘要:

Heterojunction diodes of indium tin oxide films sputtered ontop‐silicon using ion beam techniques display significant photovoltaic effects when exposed to sunlight. Galvanomagnetic and optical measurments confirm that the oxide films are highly degenerate transparent semiconductors. At a tin oxide concentration of 10%, we observed an open‐circuit voltage of 0.51 V, short‐circuit current of 32 mA/cm2, fill factor of 0.70, and conversion efficiency of 12%. As the concentration was raised to 70%, the voltage remained steady, the current fell to 27 mA/cm2, and the fill factor fell to 0.60.

ISSN:0003-6951    

DOI:10.1063/1.89135

出版商:AIP    

年代:1976

数据来源: AIP

摘要:

The crater edge formed in Si‐SiO2films by appropriate ion‐beam etching provides an angle‐lapped surface analogous to that produced by usual mechanical means; however, the angle can be usefully reduced by 3 orders of magnitude, allowing much greater spatial resolution. Furthermore, in contrast to conventional depth profiling, the separation of the etching and analysis permits repetitive measurements to be made conveniently; a fact of considerable utility in interface analysis.

ISSN:0003-6951    

DOI:10.1063/1.89136

出版商:AIP    

年代:1976

数据来源: AIP