摘要:

We report on the first experimental investigation of the use of a magnetically accelerated foil—moving foil—as a vacuum opening switch. One megampere, 60% of the total current, was transferred to a low inductance path in 800 ns.

ISSN:0003-6951    

DOI:10.1063/1.94991

出版商:AIP    

年代:1984

数据来源: AIP

摘要:

A capacitively coupled, rf glow discharge of silane in argon was studied to determine the spatial concentration of silicon atoms. Laser‐induced fluorescence was used to determine the ground state concentration profiles. The fluorescence profiles clearly show the sharp boundaries of the sheath regions. These profiles were much more sensitive to plasma chemistry changes than profiles obtained from plasma emission. Experiments with nitrogen addition demonstrated significant changes in the silicon atom profiles near the sheath boundary.

ISSN:0003-6951    

DOI:10.1063/1.94992

出版商:AIP    

年代:1984

数据来源: AIP

摘要:

This letter considers quantitative models of microscopic processes in plasmas formed in gas phase devices for pulsed power. Although models have been developed for devices such as lasers, there are others, such as switches, where these processes have been treated only phenomenologically. Further, transport data must be adjusted to include the effects of high electron density. It is shown that it is necessary to use a microscopic model to correctly describe the device behavior. Examples presented include the effect of Coulomb collisions on conductivity in various gases, and the ionization processes in a hydrogen thyratron.

ISSN:0003-6951    

DOI:10.1063/1.94993

出版商:AIP    

年代:1984

数据来源: AIP

摘要:

Using a ten‐chord interferometer, we have measured a field‐aligned (k∥≊2 m−1;k⊥≳25 m−1) plasma‐density disturbance propagating alongBwith a speed in the ion acoustic range. The propagation is purely in the electron drift direction and is observed only when the drift parameter (electron drift speed/electron thermal speed)≳0.1. A novel spatial‐filter technique resolves this localized mode, which otherwise would be hidden by more robust global disturbances present along the lines of sight.

ISSN:0003-6951    

DOI:10.1063/1.94994

出版商:AIP    

年代:1984

数据来源: AIP

摘要:

The results of our previous study of dark‐spot defects (DSD’s) in aged 1.3‐&mgr;m InP/InGaAsP light‐emitting diodes (LED’s) have strongly suggested that the defects form as a result of the migration of gold from thepcontact into various epitaxial layers. To provide further support for this degradation mechanism, we compare, in this study, the formation of DSD’s in LED’s fabricated with the usual BeAupmetallization and a new platinumpcontact. After accelerated aging (200 °C junction temperature, 20 kA/cm2, 3×103h), DSD’s were observed only in the devices with BeAu contacts, thus directly identifying the active role of gold migration in DSD formation.

ISSN:0003-6951    

DOI:10.1063/1.94995

出版商:AIP    

年代:1984

数据来源: AIP

摘要:

An archival optical storage technique based on hydrogen evolution in hydrogenated amorphous silicon (a‐Si:H) is presented. Thin films (∼0.5 &mgr;m) ofa‐Si:H have been prepared by rf glow discharge in SiH4and deposited on a thermally grown oxide pattern formed on float zone ⟨111⟩ crystalline Si (c‐Si) substrates. Replication of the oxide pattern is achieved by ablation of thea‐Si:H layer after annealing. This low‐temperature process produces a predesigned array of circular holes caused by bursting of microbubbles in thea‐Si:H layer. In comparison, the circular holes nucleate randomly on unoxidizedc‐Si.

ISSN:0003-6951    

DOI:10.1063/1.94996

出版商:AIP    

年代:1984

数据来源: AIP

摘要:

Ultrathin films (0–20 A˚) of Ni have been deposited on atomically clean Si(111) surfaces at room temperature. The composition and morphology of the films have been determined, employing the high depth resolution obtainable in medium energy ion scattering. Disordered Ni2Si islands are formed, which grow laterally and in thickness with increasing Ni coverage. The silicide formation ends when the islands coalesce into a continuous film, at a Ni coverage of ≊8×1015Ni atoms/cm2. During the silicide growth, the surfaces of the islands are rich in Si.

ISSN:0003-6951    

DOI:10.1063/1.94998

出版商:AIP    

年代:1984

数据来源: AIP

摘要:

The graphoepitaxy of KCl was investigated through depositing the KCl film on a Si substrate having square‐wave grating by means of vacuum evaporation, and then exposing the film to water vapor. The deposited crystallites grew to become rectangular parallelepipeds 3–4 &mgr;m in diameter because of the water adsorbed on the surface. During the growth, crystallite orientation was aligned along the grating by the effect of the groove walls. A well‐aligned in‐plane orientation was obtained when the groove width of the grating was kept smaller than the width of the grown crystallite and when the groove depth was close to the crystallite’s height.

ISSN:0003-6951    

DOI:10.1063/1.94999

出版商:AIP    

年代:1984

数据来源: AIP

摘要:

Low‐temperature photoluminescence studies of ion‐implanted and rapid thermal annealed or pulsed‐laser‐annealed Si are reported. The samples were implanted with As, P, Sb, or B. The luminescence spectra of the pulsed‐laser‐annealed samples show strong sharp luminescence lines from radiation induced defects, whereas in samples implanted with As, P, or B and rapidly annealed with an arc lamp a very clean spectrum without any defect luminescence is observed. This indicates a very low defect concentration in the lamp annealed material. In Sb‐implanted lamp‐annealed samples, however, a broad defect luminescence band appears as the temperature is raised and which varies in shape as a function of the annealing temperature. This band is probably due to Sb agglomerates.

ISSN:0003-6951    

DOI:10.1063/1.95000

出版商:AIP    

年代:1984

数据来源: AIP

摘要:

We have studied the annealing behavior of light‐induced changes in room‐temperature photoconductivity and density of states at the Fermi level of hydrogenated amorphous silicon alloys for light soaking at temperatures between 100 to 400 K. Defects created at higher temperatures are found to be more difficult to anneal out. The results are discussed on the basis of the existing models for light‐induced effect.

ISSN:0003-6951    

DOI:10.1063/1.95001

出版商:AIP    

年代:1984

数据来源: AIP