摘要:

The plasma created near an aperture in vacuum is found to be an effective retropulse isolator for CO2laser light. The plasma created by a subjoule CO2beam remains overdense at least 50 ns after the CO2pulse.

ISSN:0003-6951    

DOI:10.1063/1.89749

出版商:AIP    

年代:1977

数据来源: AIP

摘要:

Substitution of neon for argon as the diluent gas in electron‐beam‐pumped XeF lasers allows increased optical extraction energies of 2.8 J l−1and efficiencies of 1.8%. The improved performance in neon diluent is due to a reduction of the optical absorption in the laser medium which occurs at the laser wavelength. This optical absorption is shown to be present when the rare gases along are irradiated.

ISSN:0003-6951    

DOI:10.1063/1.89750

出版商:AIP    

年代:1977

数据来源: AIP

摘要:

When optical fibers are prepared by the (CVD) technique, an index dip often appears at the core center. The index dip reduces the coupling efficiency to optical sources and also it reduces the transmission bandwidth. This index dip in the core with germania‐doped silica could be eliminated successfully with a flow of the vapors of controlled proportion of GeCl4and O2during the collapse. The graded‐index fibers without dip were prepared by this technique. The bandwidth was increased from 500 to 800 MHz : km and the coupling efficiency by 20% when the index profile was controlled and the index dip was eliminated.

ISSN:0003-6951    

DOI:10.1063/1.89759

出版商:AIP    

年代:1977

数据来源: AIP

摘要:

The local parameters of linear and circular birefringence are nondestructively measured along a single‐mode optical fiber by electro‐optic and magneto‐optic modulation of the polarization in the fiber. A complete mapping of the evolution of the state of polarization is obtained and is compared with a theoretical model.

ISSN:0003-6951    

DOI:10.1063/1.89760

出版商:AIP    

年代:1977

数据来源: AIP

摘要:

A micromechanical device is described which consists of a thin metal‐coated SiO2membrane fabricated on an ordinary silicon wafer using techniques compatible with IC processing. The membrane can be deflected electrostatically over large angles (≳5°), at high frequencies (≳40kHz), at least 1010times without breaking or any noticeable deterioration due to fatigue. A number of adjacent devices have been used as a 16‐element light modulator array in a small display system. Calculations of performance parameters are in good agreement with experiment. Advantages of this device over similar previous deformagraphic systems are IC compatibility, good voltage sensitivity, high speed, higher deflections with less fatigue, well‐established fabrication techniques, and the possibility of integrating driving and decoding circuitry on the same chip as the modulators. In addition, the complexities of a vacuum environment and e‐beam addressing are avoided.

ISSN:0003-6951    

DOI:10.1063/1.89761

出版商:AIP    

年代:1977

数据来源: AIP

摘要:

Oxide‐stripe laser and Burrus LED technologies have been combined to enable DH GaAlAsp‐n‐junction lasers with emission perpendicular to the junction plane to be prepared.

ISSN:0003-6951    

DOI:10.1063/1.89762

出版商:AIP    

年代:1977

数据来源: AIP

摘要:

Deep‐level transient spectroscopy (DLTS) has been used to determine the activation energy and spatial distribution of the electron traps introducedn‐type silicon implanted with 5×1010Se ions/cm2at 800 keV. Radiation damage levels were demonstrated to be present up to a 600 °C anneal. After 700 °C anneal, two deep levels were found atEc−0.225 eV andEc−0.485 eV. The in‐depth distributions of theEc−0.225 eV level after 600 °C anneal and of the two levels after the 700 °C anneal were determined. So, it was found that selenium is a fast diffuser and that each implanted Se ion forms one trap with two levels.

ISSN:0003-6951    

DOI:10.1063/1.89763

出版商:AIP    

年代:1977

数据来源: AIP

摘要:

The switching response of thin‐film amorphous chalcogenide threshold switches to pulse bursts of sine waves and square waves is reported. For the waveforms and devices investigated, preswitching behavior as evidenced by the delay time is a function of the rms voltage applied to the device. Switching voltages were slightly greater than the minimum required for switching.

ISSN:0003-6951    

DOI:10.1063/1.89764

出版商:AIP    

年代:1977

数据来源: AIP

摘要:

Recent work has indicated that residual contamination on III‐V substrates has an adverse effect on epilayer nucleation. This letter presents preliminary results of measurements of contamination levels on methanol‐bromine polished ion‐cleaned (100) InP substrates using low [primary ion dose (<5×1012ions mm−2) secondary ion mass] spectrometry (SIMS). Even after ion etching ≃0.48 &mgr; from the surface residual contamination levels in the 100‐ppm range persist, the largest being oxygen. Micrographs of the ion‐cleaned surface showed precipitation of In at the surface which was caused by differential sputtering effects.

ISSN:0003-6951    

DOI:10.1063/1.89765

出版商:AIP    

年代:1977

数据来源: AIP

摘要:

Na+and K+ion mobilities in thermally grown SiO2films have been determined from transient ion curret measurements in MOS capacitors. The mobilities were determined from the observed transit times of Na+and K+ions measured in the temperature ranges 40–180 °C and 230–300 °C, respectively. For Na+ions in both a dry‐grown oxide and one grown in a 10% HCl/oxygen mixture, &mgr;=1.0 exp(−0.66eV/kT) cm2/V sec. For K+ions in a dry‐grown oxide, &mgr;=0.03 exp(−1.09eV/kT) cm2/V sec.

ISSN:0003-6951    

DOI:10.1063/1.89766

出版商:AIP    

年代:1977

数据来源: AIP