摘要:

Ga0.47In0.53As and Al0.48In0.52As were grown lattice matched to InP substrates with a rotating substrate holder. The Ga, In, and Al beams were supplied by separate effusion cells and the uniformity of the resulting layers was evaluated with x‐ray rocking curves for different rotation speeds. Lateral variation of the lattice constant as small as 10−5per cm may be achieved with a rotation speed of 3 rpm. The full width at half‐maximum of the x‐ray spectrum from the epitaxial layer is comparable to that of the substrate indicating that there is practically no compositional grading.

ISSN:0003-6951    

DOI:10.1063/1.92819

出版商:AIP    

年代:1981

数据来源: AIP

摘要:

An organic color sensor was fabricated by usingp‐ andn‐type dyes. The cell has a layered structure of Zn0/merocyanine/rhodamine B, which acts as ann‐p‐n‐ photodiode. The spectral sensitivity of the cell was changed remarkably by bias voltage, and a good separation of the spectral responses was obtained in the visible‐spectrum region.

ISSN:0003-6951    

DOI:10.1063/1.92820

出版商:AIP    

年代:1981

数据来源: AIP

摘要:

The diode properties of reactively sputtered hydrogenated amorphous silicon Schottky barrier structures (a‐SiHx/Pt) have been investigated. We find a systematic relation between the changes in the open circuit voltage, the barrier height, and the diode quality factor. These results are accounted for by assuming that hydrogen incorporation into the amorphous silicon network removes states from the top of the valence band and sharpens the valence‐band tail. Interfacial oxide layers play a significant role in the low hydrogen content, and low band‐gap regime.

ISSN:0003-6951    

DOI:10.1063/1.92821

出版商:AIP    

年代:1981

数据来源: AIP

摘要:

We have measured the spin polarization of electrons optically pumped by polarized light and photoemitted from GaAs‐AlxGa1−xAs superlattices with negative electron affinity. We find a maximum polarization of 49%, in contrast to the expectations related to polarized photoluminescence studies. Reasons for these findings based on the difference between photoemission from negative electron affinity sources and photoluminescence are discussed.

ISSN:0003-6951    

DOI:10.1063/1.92822

出版商:AIP    

年代:1981

数据来源: AIP

摘要:

We report the first observation of carrier heating effects for In1−xGaxAsyP1−y1.3‐&mgr; light emitting diodes, including variation of carrier temperature with injection current and ambient temperature. These results demonstrate that carrier temperature reaches 400 K at 2.5×104A/cm2(260 mA) for an LED with room‐temperature ambient. Such significant heating must be taken into account in modeling device performance.

ISSN:0003-6951    

DOI:10.1063/1.92823

出版商:AIP    

年代:1981

数据来源: AIP

摘要:

GaInAsP lattice matched to InP is known to have two well‐resolved InP‐like and InGaAs‐like longitudinal optical (LO) phonons over the composition range 0<y<1. Here for the first time the electron Hall mobilities in GaInAsP are calculated by the iterative technique taking the scattering due to the two LO phonons into account. The results show a further downward bowing of the mobilities than those calculated with one‐LO‐phonon model.

ISSN:0003-6951    

DOI:10.1063/1.92824

出版商:AIP    

年代:1981

数据来源: AIP

摘要:

An electron beam generated by a gas discharge is used to anneal ion implanted silicon. The discharge operating parameters as well as the electron beam energy are measured. Finally, plasma annealing of BF+2implantedn‐type silicon is examined by observing the sheet resistivity of the implanted layers and the resulting diode characteristics.

ISSN:0003-6951    

DOI:10.1063/1.92825

出版商:AIP    

年代:1981

数据来源: AIP

摘要:

Hydrogen plasmas have been shown to significantly reduce barrier heights and recombination center densities in the grain boundaries in polycrystalline silicon. These results have stimulated interest in the use of other modifying agents. We demonstrate here that the exposure ofn‐type polycrystalline silicon to fluorine and oxygen in molecular and atomic forms can result in increased potential barrier heights. This has implications for the development of silicon varistors and capacitors for use in integrated circuits.

ISSN:0003-6951    

DOI:10.1063/1.92826

出版商:AIP    

年代:1981

数据来源: AIP

摘要:

Direct observation of bombarding 5–15‐keV Ga+ion condensation on a Si target is achieved using a scanning ion microscope with a liquid‐Ga ion source. The liquidlike pieces of condensed Ga move about easily to join or split. Condensation takes place beyond a critical ion dose, which is roughly explained by an implanted‐ion build‐up model.

ISSN:0003-6951    

DOI:10.1063/1.92827

出版商:AIP    

年代:1981

数据来源: AIP

摘要:

Low barrier (≲0.4 eV) microwave mixer diodes were fabricated by means of silicon molecular beam epitaxy (Si MBE). Schottky barrier lowering was achieved by using a thin highly doped epitaxial layer to modify the electric field near the surface. The advantages of silicon MBE for these devices arise from the ability to grow epitaxial layers which are very precisely controlled in thickness and in the spatial distribution of dopant. The resulting diodes have both a low barrier height and a very low forward series resistance.

ISSN:0003-6951    

DOI:10.1063/1.92828

出版商:AIP    

年代:1981

数据来源: AIP