摘要:

Laterally selective growth of III‐V compounds has been successfully demonstrated by metalorganic chemical vapor deposition. This was achieved by using a specially designed growth chamber and susceptor that allows the substrate to move with respect to a stationary GaAs or Si mask. We have used this technique to selectively deposit GaAs1−xPxwith different values ofxand a GaAs‐GaAsP superlattice on a single GaAs substrate. We have also selectively grown multiple color light‐emitting diodes on a GaAs substrate.

ISSN:0003-6951    

DOI:10.1063/1.96751

出版商:AIP    

年代:1986

数据来源: AIP

摘要:

Hydrogen radicals are employed in the growth of ZnSe. They react with starting gases to form long‐lifetime precursors for deposition. The major advantages of hydrogen radical assisted chemical vapor deposition over the existing methods include (1) low‐temperature growth, (2) plasma‐free substrate, (3) selective precursor formation, (4) substrate cleaning effect, (5) rearrangement of atoms on the growing surface, and (6) passivation of grain boundaries or dangling bonds. Highly (111) axis oriented ZnSe films have been prepared on glass substrates at 200 °C. The temperature dependence of the electrical conductivity in the dark and the photoconductive response suggest low density of traps. Epitaxial ZnSe films on GaAs substrates have been obtained at 200 °C.

ISSN:0003-6951    

DOI:10.1063/1.96752

出版商:AIP    

年代:1986

数据来源: AIP

摘要:

We have grown AlGaAs/GaAs heterostructures on (111) oriented GaAs substrates by molecular beam epitaxy. Materials with good optical and electrical properties, including mobility enhancement in two‐dimensional electron and hole gases, have been obtained for the first time.

ISSN:0003-6951    

DOI:10.1063/1.96753

出版商:AIP    

年代:1986

数据来源: AIP

摘要:

The removal of lattice damage and consequent activation by rapid thermal annealing of implanted Si, Se, Zn, and Be in GaAs was investigated by capacitance‐voltage profiling, Hall measurements, transmission electron microscopy (TEM), secondary ion mass spectrometry, and Rutherford backscattering. The lighter species show optimum electrical characteristics at lower annealing temperatures (∼850 °C for Be, ∼950 °C for Si) than the heavier species (∼900 °C for Zn, ∼1000 °C for Se), consistent with the amount of lattice damage remaining after annealing. TEM reveals the formation of high densities (107cm−2) of dislocation loops after 800 °C, 3 s anneals of high dose (1×1015cm−2) implanted GaAs, which are gradually reduced in density after higher temperature anneals (∼1000 °C). The remaining loops do not appear to affect the electrical activation or carrier mobility in the implanted layer, the latter being comparable to bulk values.

ISSN:0003-6951    

DOI:10.1063/1.96754

出版商:AIP    

年代:1986

数据来源: AIP

摘要:

The oxidation kinetics of HF‐etchedn‐ andp‐doped silicon in air at room temperature have been studied by electron spectroscopy for chemical analysis. No great differences have been found between then‐ andp‐type oxidation kinetics at the low doping level of the studied samples. The rate of oxide growth on the HF‐etched surface is much lower than that on a silicon surface obtained by fracture in air of a silicon monocrystal. The behavior of a silicon sample fractured in de‐ionized water and then oxidized in air at room temperature is intermediate. The above findings have been interpreted on the basis of surface reactions involving the plasticizers of the HF and water containers. These reactions produce carbon‐rich hydrophobic surfaces which retard the silicon oxide growth. A mechanism for the involved surface reactions is proposed.

ISSN:0003-6951    

DOI:10.1063/1.96755

出版商:AIP    

年代:1986

数据来源: AIP

摘要:

The room‐temperature Ag/(Hg, Cd)Te interface has been studied in ultrahigh vacuum with x‐ray and ultraviolet photoelectron spectroscopy. The Ag evaporated onto (Hg, Cd)Te diffuses 102–103A˚ into the bulk of the semiconductor, displacing Hg as it does so. The bands bend 0.05–0.1 eV upward at low coverage. No significant chemical reaction is observed.

ISSN:0003-6951    

DOI:10.1063/1.96756

出版商:AIP    

年代:1986

数据来源: AIP

摘要:

The detailed morphology of defects occurring in GaAs layers grown by molecular beam epitaxy (MBE) was determined by high resolution scanning electron microscopy and scanning Auger spectroscopy under various substrate preparation and MBE growth conditions. It was observed that surface defects commonly identified as oval defects are of two varieties: particulate‐originated defects and liquid‐gallium‐originated defects. The former type was shown to be sensitive to the cleanliness of the surface, while the latter type was shown to be determined primarily by the growth conditions. In addition, we found the use of an arsenic cracking source eliminated the liquid‐gallium‐originated defects.

ISSN:0003-6951    

DOI:10.1063/1.96757

出版商:AIP    

年代:1986

数据来源: AIP

摘要:

A technique equivalent to the conventionalC(V) measurement is developed for silicon‐on‐insulator technology. A depletion mode transistor is used. TheID(VG) characteristic and its derivative, i.e., the transconductance, allow the determination of the doping of the Si film, the oxide thickness, the fixed oxide charge at both Si/SiO2interfaces. The device can be used in process control without any extra process steps.

ISSN:0003-6951    

DOI:10.1063/1.96759

出版商:AIP    

年代:1986

数据来源: AIP

摘要:

Disordering and alloying of the GaAs‐AlAs superlattice by high‐dose implantation of As ions and rapid thermal annealing were studied by Raman scattering. It was found that the superlattice was disordered by ion implantation, and the spectrum of the resulting amorphous phase was identical to the spectrum of amorphous AlxGa1−xAs alloy. It consisted of GaAs‐ and AlAs‐type bands which had the same energies as corresponding bands in amorphous GaAs and AlAs. The ratio of intensities of the bands reflected the Al content. After annealing, the crystalline AlxGa1−xAs alloy was formed with composition dependent on actual thickness of the superlattice layers.

ISSN:0003-6951    

DOI:10.1063/1.96760

出版商:AIP    

年代:1986

数据来源: AIP

摘要:

The criteria for strained‐layer growth of semiconductor superlattices are discussed. It is shown that to avoid misfit dislocations, careful attention has to be paid to the composition, geometry, and dimensions of the quantum well structure. Two critical thicknesses are found to apply to strained‐layer superlattice growth, one relating to the thickness of individual layers and one relating to the overall thickness of the superlattice. We derive the relationship between these two critical values. Experimental studies of the GexSi1−x/Si on Si and GexSi1−x/Ge on Ge systems using electron microscopy, Raman scattering, and ion channeling show that exceeding the critical superlattice thickness results in a network of dislocations between the substrate and first superlattice layer.

ISSN:0003-6951    

DOI:10.1063/1.96761

出版商:AIP    

年代:1986

数据来源: AIP