摘要:

The rate of cw laser induced solid phase epitaxy in self‐implantation amorphized silicon has been measured by determining the dwell time required to regrow the entire amorphous layer at the center of a scanned laser beam. The measurement was performed in the annealing temperature range of 800–900 °C. The measured regrowth rates were about two orders of magnitude higher than those extrapolated from low‐temperature furnace annealing data.

ISSN:0003-6951    

DOI:10.1063/1.92566

出版商:AIP    

年代:1981

数据来源: AIP

摘要:

It has been shown through attempts to obtain pure carrier injection for the determination of electron and hole impact ionization rates (&agr; and &bgr;) that electroabsorption of recombination radiation can result in significant contamination of the injected currents in direct band‐gap semiconductors. The influence of this contamination on the values determined for &agr; and &bgr; and the requirements on the device structure to minimize this contamination are discussed.

ISSN:0003-6951    

DOI:10.1063/1.92567

出版商:AIP    

年代:1981

数据来源: AIP

摘要:

Terrace formation in semiconductor epitaxial layers has been postulated to cause lattice bending, which ought to be observable by x‐ray diffraction. Consideration of dynamical effects of x‐ray reflection, both at the terraces and from a distorted crystal lattice, shows that diffraction effects by far outweigh the effects of lattice bending. For a given liquid phase epitaxial GaAs layer on a GaAs substrate, the lattice bending is estimated to be less than 10−5rad.

ISSN:0003-6951    

DOI:10.1063/1.92568

出版商:AIP    

年代:1981

数据来源: AIP

摘要:

Si‐SiO2‐Al capacitors were fabricated on both ⟨100⟩ and ⟨111⟩ oriented Si. The electron tunneling current from the Si accumulation layer was measured in the Fowler–Nordheim region. Comparing the current versus electric field for both crystal orientations, tunneling current is appreciably higher in ⟨100⟩ oriented than in ⟨111⟩ oriented capacitors. An explanation is suggested based on the conservation of transverse crystal momentum. The result implies that metal‐oxide‐semiconductor transistors fabricated on ⟨111⟩ oriented Si might be less susceptible to oxide injected charge instabilities than those fabricated on ⟨100⟩ oriented Si.

ISSN:0003-6951    

DOI:10.1063/1.92569

出版商:AIP    

年代:1981

数据来源: AIP

摘要:

We describe the fabrication and characteristics of a small‐area (diameter ≃20 &mgr;m) InP/InGaAs heterojunction phototransistor, a promising photodetector/preamplifier for long‐wavelength optical receivers. The high sensitivity (hfe≃100 at 20‐nW incident power) and small junction capacitance (≲0.2 pF) of the device combine to produce a gain‐bandwidth product in excess of 1.7 GHz.

ISSN:0003-6951    

DOI:10.1063/1.92570

出版商:AIP    

年代:1981

数据来源: AIP

摘要:

We show that the thermal instability that is observed in Schottky diodes with an Al film on NiSi contact to ⟨Si⟩ can be removed by introducing a very thin (∼250 A˚) tungsten film between the Al and the NiSi layers. This structure can be formed by sequential evaporation of Ni, W, and Al and subsequent thermal annealing to form NiSi. Schottky barrier measurements show that the contact is thermally stable at 450 °C up to about 1‐h annealing with very little change in the electronic barrier height. A model, derived from the electrical measurements, is proposed for the failure mode of the tungsten barrier after excessive annealing.

ISSN:0003-6951    

DOI:10.1063/1.92571

出版商:AIP    

年代:1981

数据来源: AIP

摘要:

The electrical properties of single‐crystal and amorphous Si, doped using a pulsed UV laser, have been studied as a function of laser wavelength and fluence and of UV dose. BCl3or PCl3parent gases were used to provide B or P dopant atoms. Dissociation of molecules adsorbed on the Si surface can supplement photolysis of gas‐phase molecules as a source of doping atoms.

ISSN:0003-6951    

DOI:10.1063/1.92572

出版商:AIP    

年代:1981

数据来源: AIP

摘要:

The magnetic structure of a superconductor in the intermediate state is imaged to a resolution of <0.9 &mgr;m using the response of the superconductor to electron beam irradiation.

ISSN:0003-6951    

DOI:10.1063/1.92573

出版商:AIP    

年代:1981

数据来源: AIP

摘要:

Digital computer simultations have been used to map parameters of the transition to chaos in an rf current driven Josephson junction. Our results are qualitatively like those reported by others using analog techniques, but differ quantitatively. Our calculations show that the parameters for the onset of chaos are the same as those required for high parametric gain. This leads to the conclusion that the ’’noise rise’’ in Josephson junction parametric amplifiers is due to chaos.

ISSN:0003-6951    

DOI:10.1063/1.92574

出版商:AIP    

年代:1981

数据来源: AIP

摘要:

The presence of hydrogen in niobium containing 5 at. % alloying titanium gives rise to new relaxation processes at liquid helium temperatures. The effects have been studied for two H concentrations (0.08 and 0.48 at. %), and by exciting two resonance modes of the specimen (20 and 74.5 kHz). The temperatures at which the processes occur are independent of H content and their intensities increase with increase of the H concentration. At the lower resonance frequency the peaks shift towards lower temperatures and their intensities markedly decrease. This latter behavior may be explained by a delocalized tunneling model for hydrogen trapped by Ti.

ISSN:0003-6951    

DOI:10.1063/1.92575

出版商:AIP    

年代:1981

数据来源: AIP