摘要:

The hyperfine spectrum associated with unpaired electrons at the (111) Si/SiO2interface (Pbcenters) is reported for the first time. Electron paramagnetic resonance measurements indicate that the hyperfine interactionS&drarr;⋅A¯⋅I&drarr; arises from the29Si isotope and is characterized byA∥=146.(±5.)×10−4cm−1andA⊥=85.(±8.)×10−4cm−1. An analysis of this hyperfine interaction firmly establishes many of the details in the structure of this interface defect.

ISSN:0003-6951    

DOI:10.1063/1.94244

出版商:AIP    

年代:1983

数据来源: AIP

摘要:

The steady‐state surface photovoltage technique was used to determine the optical absorption tail of InP:Mn, by extrapolation from the above‐band‐gap absorption spectrum. Reabsorbed recombination radiation is shown to have no effect on this procedure although it does raise the effective minority‐carrier diffusion length. The tail absorption coefficient of InP:Mn increases with hole density in the range of 4.1×1014cm to 5.3×1016cm−3. In the 1016cm−3range, the absorption coefficient appears to rise also with the density of dislocations.

ISSN:0003-6951    

DOI:10.1063/1.94245

出版商:AIP    

年代:1983

数据来源: AIP

摘要:

We demonstrate a new photoconductive device called minority hole sinked photoconductive detector. This detector has a back gate electrode for removing slow minority holes, resulting in an improvement of the detector’s fall time from 1 ns to 450 ps down to 80 ps. This represents nearly an order of magnitude improvement in the gain‐bandwidth product. Furthermore, the back gate bias can reduce the noise power by 1 dB at 100 MHz and 0.25 dB at 800 MHz at 1.2‐MHz noise bandwidth.

ISSN:0003-6951    

DOI:10.1063/1.94246

出版商:AIP    

年代:1983

数据来源: AIP

摘要:

We have observed platinum diffusion into the silicon underlying a PtSi film. Silicon substrates covered with platinum films were annealed at temperatures from 300 to 800 °C to form the silicide. Backscattering spectrometry spectra show no degradation of the silicide in the samples treated below 700 °C. Deep level transient spectroscopy (DLTS) was used to measure diffused platinum electron traps. Electron trap concentrations in samples treated below 700 °C are below the DLTS detection limit of 5×1011/cm3. Trap concentration profiles for the samples annealed at higher temperatures were obtained. These profiles cannot in general be explained by simple diffusion from an infinite source of platinum at the surface.

ISSN:0003-6951    

DOI:10.1063/1.94247

出版商:AIP    

年代:1983

数据来源: AIP

摘要:

The generation of dislocations at [100] nitride film edges on (001)Czochralski silicon wafers is studied by means of high voltage electron microscopy. After local oxidation 90° (edge) dislocations forming triangular half‐loops with sides lying in [211¯] and [21¯1] directions in a (011) plane are found. It is observed that the shape of the surface stacking faults is also influenced by the mask orientation and that a denuded zone free from bulk defects is formed at the silicon surface. A novel model to explain the dislocation generation and movement under the influence of the stresses near the Si3N4film edges is discussed.

ISSN:0003-6951    

DOI:10.1063/1.94248

出版商:AIP    

年代:1983

数据来源: AIP

摘要:

Al‐Si contacts have been formed by implantation of As ions through Al‐Si interfaces followed by heat treatment at 400–500 °C for 10 min. The erosion of Si proceeds uniformly in contact areas at the sintering temperatures. Diodes using Al‐Si contacts produced by this technique have been fabricated on thinn+layers inp‐type Si substrates with junction depths of 0.35 &mgr;m and contact areas of 5 &mgr;m2. The average leakage current per diode (with an approximate junction area of 14×26 &mgr;m2) is about 10−8A, as compared to the leakage current of 10−5A for diodes with Al‐Si contacts prepared by sintering of Al on Si at 420 °C. We attribute the improvement to the uniformity of Si erosion after the interfacial oxide has been dispersed by ion irradiation.

ISSN:0003-6951    

DOI:10.1063/1.94249

出版商:AIP    

年代:1983

数据来源: AIP

摘要:

We describe a method of controlling the in‐plane ⟨100⟩ directions of grains in (100)‐textured silicon films produced by zone‐melting recrystallization over amorphous SiO2. Grains having in‐plane orientation within a narrow range are able to grow through an orientation filter consisting of a pattern of crystallization barriers, while grains having other orientations are occluded. The results of experiments using an orientation filter, and the parameters which optimize filter performance, are reported.

ISSN:0003-6951    

DOI:10.1063/1.94255

出版商:AIP    

年代:1983

数据来源: AIP

摘要:

The effects of the addition of a small amount of Ti toinsituprocessed Nb3Sn tape superconductors have been studied. It has been found that Ti addition significantly improves the critical current densityJcat high magnetic fields above 12 T. AJcvalue of 3×104A/cm2at a magnetic field of 15 T parallel to the tape surface was obtained for the Cu‐40 (Nb‐1.6 wt. % Ti) tape reacted with Sn at 650 °C for 100 h. This enhancement in high‐field performance can be associated with the incorporation of Ti into the A15 Nb3Sn.

ISSN:0003-6951    

DOI:10.1063/1.94256

出版商:AIP    

年代:1983

数据来源: AIP

摘要:

A large decrease in the radiation‐induced conductivity of polyethylene terephthalate was produced upon doping films with an electron acceptor molecule. Transient x‐ray photoconductivity data verify that this impurity acts as a deep trap. Charge transfer occurs in the doped dielectric which may be associated with this trapping process.

ISSN:0003-6951    

DOI:10.1063/1.94257

出版商:AIP    

年代:1983

数据来源: AIP