摘要:

Li2O out‐diffusion in Ti‐diffused LiNbO3optical waveguide was suppressed by annealing a LiNbO3y‐cut substrate in Li2CO3powder prior to the Ti‐diffusion process. The waveguide, made of the substrate annealed at 600 °C for 72 h, supported single TE and TM modes without any out‐diffusion modes for 0.6328‐&mgr;m light propagation.

ISSN:0003-6951    

DOI:10.1063/1.89523

出版商:AIP    

年代:1977

数据来源: AIP

摘要:

When I2is injected into a stream of chemically produced O*2(1&Dgr;g), electronically excited iodine atoms [I* (52P1/2)] are created. For suitably high O*2/O2ratios, a population inversion is established between the 52P1/2and 52P3/2atomic states of iodine. The inversion was observed using an optical double‐resonance technique.

ISSN:0003-6951    

DOI:10.1063/1.89524

出版商:AIP    

年代:1977

数据来源: AIP

摘要:

The spectral characteristics, temporal gain profile, and saturation energy have been measured for the 353‐nm XeF laser line using a picosecond probe pulse of the third harmonic of a Nd : glass laser.

ISSN:0003-6951    

DOI:10.1063/1.89525

出版商:AIP    

年代:1977

数据来源: AIP

摘要:

Four‐wave mixing of the type &ohgr;4 = 2&ohgr;1 − &ohgr;2has been observed in pure liquid CO at 77 °K. The CO2pump beams were derived from separate resonators to yield a mixing signal at 8.64 &mgr;m. The power dependence of the mixing signal has been studied over four orders of magnitude and the nonlinear susceptibility has been measured. Scaling calculations show that efficiencies greater than 10% are expected for pump powers near the breakdown threshold and with confinement of the pump beams in a hollow dielectric waveguide.

ISSN:0003-6951    

DOI:10.1063/1.89526

出版商:AIP    

年代:1977

数据来源: AIP

摘要:

Fast growth and total formation of platinum silicide can be obtained by using a chromium, silicon nitride, or sputtered silicon film to protect the platinum from the unfavorable effects of small amounts of oxygen contained in the furnace during annealing. X‐ray diffraction and Rutherford backscattering analysis were used for identifying the silicides and studying their growth kinetics. The simultaneous growth of the two phases Pt2Si and PtSi was observed. The thickness of Pt2Si and PtSi increased in proportion to the square root of the annealing time with an activation energy of about 2 eV. At higher temperature (∼800 °C), solid‐phase epitaxial growth (SPEG) of silicon was found in the (Si⟨111⟩)/PtSi/Si amorphous system.

ISSN:0003-6951    

DOI:10.1063/1.89527

出版商:AIP    

年代:1977

数据来源: AIP

摘要:

On a specimen ofn‐type CdCr2Se4single crystals, both the current‐ and voltage‐controlled negative resistances have been observed simultaneously at temperatures below 131 °K, while at temperatures from 131 to 198 °K, only current‐controlled negative resistance had been observed; above 198 °K, neither had been observed.

ISSN:0003-6951    

DOI:10.1063/1.89536

出版商:AIP    

年代:1977

数据来源: AIP

摘要:

Lifetimes longer than two years, and decreases in light output power less than 15% at constant current after one year, both at 70 °C, are reported for selected continuously operated double‐heterostructure (Al,Ga)As lasers. Also, a median 70 °C lasing lifetime of 4500 h is reported for 100 lasers chosen randomly from 10 slices. This median lifetime is thought to correspond to 3.0×105h (34 yr) of continuous operation had the devices been operated at 22 °C. The corresponding mean time to failure is 1.3×106h (≳100 yr).

ISSN:0003-6951    

DOI:10.1063/1.89537

出版商:AIP    

年代:1977

数据来源: AIP

摘要:

Films of In1−xGaxAs and GaSb1−yAsyover the entire composition ranges have been grown on (100) GaAs, InAs, and GaSb substrates by MBE.Insituobservations by high‐energy electron diffraction have revealed a variety of surface reconstructions and correlated the growth process with the lattice mismatch. The compositions are governed by the relative rates of In and Ga in In1−xGaxAs, but primarily by that of Sb in GaSb1−yAsybecause of its dominant incorporation over As. In these alloys, Sn is found to be a donor throughout In1−xGaxAs but an amphoteric impurity in GaSb1−yAsy.

ISSN:0003-6951    

DOI:10.1063/1.89538

出版商:AIP    

年代:1977

数据来源: AIP

摘要:

Electron and hole drift mobility have been measured inn‐ andp‐type amorphous Si Schottky‐barrier solar cells. At room temperature &mgr;dn= (2–5) ×10−2cm2/V sec and &mgr;dp= (5–6) ×10−4cm2/V sec. Both mobilities are trap controlled with &Dgr;E=0.19 eV for electrons and &Dgr;E=0.35 eV for holes above 250 °K and &Dgr;E=0.16 and 0.26 eV, respectively, below 250 °K. Majority‐carrier lifetimes are estimated to be 1 &mgr;sec for electrons and 25 &mgr;sec for holes.

ISSN:0003-6951    

DOI:10.1063/1.89539

出版商:AIP    

年代:1977

数据来源: AIP

摘要:

An antireflective coating is shown to raise the kink (abrupt nonlinearity in the light‐current relation) in (Al,Ga)As laser output by a factor of at least 2 or 3 in optical power before an appreciable increase in threshold current is incurred. This observation is consistent with the assumption that the kink occurs at a given optical power within the laser rather than at a given emitted power.

ISSN:0003-6951    

DOI:10.1063/1.89540

出版商:AIP    

年代:1977

数据来源: AIP