摘要:

Reflection high‐energy electron diffraction intensities during molecular beam epitaxy growth of Ni on W(110) were studied. The damping and polar angle dependence of the observed oscillations are discussed. Intensity oscillations during preparation of a Ni/Cu superlattice are also reported.

ISSN:0003-6951    

DOI:10.1063/1.98795

出版商:AIP    

年代:1987

数据来源: AIP

摘要:

A new kinetic model is presented for the formation of thermal donors near 450 °C in oxygen‐rich silicon. This model is based on the aggregation of the self‐interstitials generated by the early stage of oxygen precipitation. Good agreement is obtained with published experimental kinetics, and the model is able to account for several other observations, such as the influence of carbon.

ISSN:0003-6951    

DOI:10.1063/1.98796

出版商:AIP    

年代:1987

数据来源: AIP

摘要:

Molecular weight distribution has been measured in monodisperse polystyrene film (MW=9 000 amu) after ion bombardment, in the ion fluence range 1011–1013ions/cm2. The chosen beams are 100 keV He, 200 keV Ne, and 400 keV Ar. The experimental data have been interpreted in terms of a simple statistical model for cross‐links. The chemical yield is found to be very high and equal to 0.30, about a factor of 10 higher than the values given in the literature for gamma irradiation [M. Dole, inTheRadiationChemistryofMacromolecules(Academic, New York, 1973), Vol. 2, Chap. 5, p. 57].

ISSN:0003-6951    

DOI:10.1063/1.98797

出版商:AIP    

年代:1987

数据来源: AIP

摘要:

Ga0.47In.53As/InP quantum well structures grown by atmospheric pressure organometallic vapor phase epitaxy are characterized by high‐resolution transmission electron microscopy (HRTEM) and 4 K photoluminescence (PL). Microdensitometer analysis of the HRTEM images shows GaInAs wells as narrow as 10 A˚ with slightly asymmetric interface widths. The InP to GaInAs transitions occur within 200 monolayers while the GaInAs to InP transitions are 3–5 monolayers wide, probably due to As carryover. 4 K PL shows half‐widths below 9 meV for quantization shifts up to 140 meV. PL peak shifts as large as 395 meV for the narrowest quantum wells are observed compared to bulk Ga0.47In0.53As.

ISSN:0003-6951    

DOI:10.1063/1.98798

出版商:AIP    

年代:1987

数据来源: AIP

摘要:

A novel electroluminescent device is constructed using organic materials as the emitting elements. The diode has a double‐layer structure of organic thin films, prepared by vapor deposition. Efficient injection of holes and electrons is provided from an indium‐tin‐oxide anode and an alloyed Mg:Ag cathode. Electron‐hole recombination and green electroluminescent emission are confined near the organic interface region. High external quantum efficiency (1% photon/electron), luminous efficiency (1.5 lm/W), and brightness (>1000 cd/m2) are achievable at a driving voltage below 10 V.

ISSN:0003-6951    

DOI:10.1063/1.98799

出版商:AIP    

年代:1987

数据来源: AIP

摘要:

We have developed a novel rapid thermal processor to perform annealing of ion‐implanted GaAs in a trimethylarsenic overpressure. This has allowed study of arsenic ambient annealing in a time/temperature regime not accessible with an arsine furnace. We have compared Si implant activation efficiency and surface degradation for arsenic ambient and proximity capped anneals. The arsenic ambient gives consistently higher activation efficiency with better surfaces.

ISSN:0003-6951    

DOI:10.1063/1.98800

出版商:AIP    

年代:1987

数据来源: AIP

摘要:

Electrical and structural characteristics of thin thermally oxidized yttrium layers on Si and on Si covered with 40 A˚ of SiO2have been investigated. The factor of ∼ four advantage in the dielectric constant of Y2O3over SiO2, coupled with extremely low leakage current density of better than 10−10A/cm2in a field of 1.9 MV/cm, sufficiently high breakdown strength, and well‐behaved capacitance‐voltage characteristics makes Y2O3a viable candidate for Si very large scale integration applications, at least in passive devices. High‐resolution transmission electron microscopy reveals the structure of the composite dielectric and provides good agreement between calculated and experimental capacitance.

ISSN:0003-6951    

DOI:10.1063/1.98801

出版商:AIP    

年代:1987

数据来源: AIP

摘要:

We report investigations of B incorporation during the growth of B‐doped hydrogenated amorphous silicon (a‐Si:H) thin films by laser‐induced chemical vapor deposition (CVD) from mixtures of SiH4and B2H6. Because B2H6decomposition is very rapid, nearly all the B admitted into the reaction cell is incorporated in the growing film and the B concentration in the solid is B2H6flow rate limited rather than controlled by the gas phase dopant concentration. Widely varying B‐incorporation efficiencies reported for B‐dopeda‐Si:H grown by a variety of thermal CVD techniques are summarized and explained.

ISSN:0003-6951    

DOI:10.1063/1.98802

出版商:AIP    

年代:1987

数据来源: AIP

摘要:

We present an original Monte Carlo procedure to account for generation‐recombination noise through impurity centers in semiconductors. Numerical calculations are specialized to the case of holes in Si at 77 K. Results are found to compare favorably with available experiments.

ISSN:0003-6951    

DOI:10.1063/1.98803

出版商:AIP    

年代:1987

数据来源: AIP

摘要:

Epitaxial layers of Cd1−xZnxTe (0.04≤x≤0.62) have been grown on (100) and (111) silicon substrates by a low‐pressure chemical vapor deposition (LPCVD) process. Elemental metals were used as sources of cadmium and zinc and dimethyltelluride was used as a source of tellurium. The characterization of layers by x‐ray diffraction, scanning electron microscope, and scanning electron microscope x‐ray dispersive analysis shows that hot wall LPCVD is a viable technique to grow large‐area epitaxial layers of CdZnTe on different substrates.

ISSN:0003-6951    

DOI:10.1063/1.98804

出版商:AIP    

年代:1987

数据来源: AIP