摘要:

A large‐volume high‐power copper vapor laser excited by a longitudinal discharge in an annular volume has been demonstrated. The annular geometry provides a device configuration in which the laserprf, governed by a geometric diffusion length, can be made independent of the device volume. Laser powers of 35 W at aprfof 6 kHz has been obtained with an overall device efficiency of 0.44%.

ISSN:0003-6951    

DOI:10.1063/1.91250

出版商:AIP    

年代:1979

数据来源: AIP

摘要:

An extension of the interfering delay path concept, put forth by Browning and Lewis, is used to provide temperature compensation within a class of two‐section SAW resonator filters without adding significantly to to filter complexity. An example calculation shows that the temperature range &Dgr;Tfor ±1° phase stability can be increased by threefold over the &Dgr;Trange provided by conventional filters on ST‐Xquartz. Design equations are given.

ISSN:0003-6951    

DOI:10.1063/1.91251

出版商:AIP    

年代:1979

数据来源: AIP

摘要:

Experimental evidence of low saturation levels of stimulated Brillouin backscatter from a magnetically confined, underdense, CO2laser heated plasma is reported. Simple arguments are given to suggest an explanation for the saturation levels observed. A comparison with other experiments suggests that the focusing system of the incident laser beam may influence the saturation level of the backscattered radiation.

ISSN:0003-6951    

DOI:10.1063/1.91252

出版商:AIP    

年代:1979

数据来源: AIP

摘要:

We present a first experimental investigation of the response of a continuous laser‐produced Cs plasma to weak modulation of the laser beam. The cw dye laser beam at 6010.49 A˚, of ∼0.1 W power, excites the Cs (6P1/2→8D3/2) atomic transition in the present study. At low modulation frequency, the fractional modulation of the transmitted laser beam is greatly reduced from that of the incident beam. At high modulation frequency, the two fractional modulations are nearly equal. We also demonstrate that the normal amplitude fluctuation of the laser beam is greatly reduced after transmission through the plasma. These features of the dynamic response are explained in a simple rate equation analysis.

ISSN:0003-6951    

DOI:10.1063/1.91253

出版商:AIP    

年代:1979

数据来源: AIP

摘要:

Polycrystalline silicon was obtained by glow discharge decomposition of silane on heated amorphous substrates. The influence of substrate temperature on crystalline structure and electrical conductivity of silicon films was investigated. Textured polycrystalline films were obtained above 450 °C.

ISSN:0003-6951    

DOI:10.1063/1.91254

出版商:AIP    

年代:1979

数据来源: AIP

摘要:

A new electric field induced mechanical instability of a single domain ferroelectric smectic C liquid is proposed. Threshold conditions and small and large field limits are discussed.

ISSN:0003-6951    

DOI:10.1063/1.91255

出版商:AIP    

年代:1979

数据来源: AIP

摘要:

Electroluminescence in reverse‐biased ZnS:Mn Schottky diodes is reported. The characteristics are similar to those ZnSe:Mn LEDS’s described previously. Light emission results from the impact excitation of manganese luminescent centres by hot electrons in the depletion region. The characteristic field for impact excitation is 8×105V cm−1.

ISSN:0003-6951    

DOI:10.1063/1.91256

出版商:AIP    

年代:1979

数据来源: AIP

摘要:

A technique for achieving the growth of GaAs VPE layers with a highly abrupt doping profile is described. With this technique, the steepness of doping profile is remarkably improved and typical interface widths for the drop in carrier concentration from 1×1016to 1×1015cm−3are 1000 A˚. This technique also permits the growth of GaAs VPE layers with multistructure having a periodic Lo‐Hi carrier concentration profile.

ISSN:0003-6951    

DOI:10.1063/1.91257

出版商:AIP    

年代:1979

数据来源: AIP

摘要:

A continuous CO2laser was used for the first time to anneal the damage in GaAs0.6P0.4induced during nitrogen implantation and to create nitrogen isoelectronic traps. Laser‐annealed samples showed isoelectronic signals which are by a factor of 6–7 stronger as compared with thermally annealed samples. The intensity of the nitrogen‐induced emission from the laser‐annealed samples was up to 50% higher than that of the near‐band‐gap emission from the starting material.

ISSN:0003-6951    

DOI:10.1063/1.91258

出版商:AIP    

年代:1979

数据来源: AIP

摘要:

Zinc and selenium implantations have been performed in Cr‐doped semi‐insulating GaAs. We show that all zinc and selenium implanted impurities are electrically active after annealing at 900 °C. But, in addition to the implantation distribution, there is a distribution induced by the chromium outdiffusion during annealing leading to a Cr‐depleted zone, which can become conductive. By taking into account these distributions, the electrical measurements may be explained.

ISSN:0003-6951    

DOI:10.1063/1.91259

出版商:AIP    

年代:1979

数据来源: AIP