摘要:

The surface topography during initial and steady state epitaxial growth of InP on InP is monitored withinsitudiffuse elastic light scattering. Theinsituresults are compared with the end‐of‐run topography measured byexsituatomic force microscopy. Upon growth initiation, an increase in surface roughness is observed with steps oriented perpendicular to the [011] and [010] direction. After several nanometers of InP deposition, the surface topography planarizes and steady state step‐flow epitaxy develops with steps aligned to the pregrowth terrace. ©1995 American Institute of Physics.

ISSN:0003-6951    

DOI:10.1063/1.113658

出版商:AIP    

年代:1995

数据来源: AIP

摘要:

Electromigration failure of Al alloy metallization systems is one of the main concerns for integrated circuit reliability as feature sizes are reduced into the submicron regime. One of the most important aspects of electromigration failure is the current density dependence of the failure time. Many studies have been conducted for widths above 1 &mgr;m and the consensus of these studies indicates that a current density exponent,n=2, describesmicrostructurerelated failure of the metallization. There is very little data available, however, for feature sizes close to 0.5 &mgr;m, particularly for metallizations consisting of Al alloys clad by refractory layers. In this letter we investigate the current density dependence of microstructure related failure for narrow (0.6 &mgr;m) conductors with multilayer TiN refractory layers, and correlate this dependence with void formation by electromigration. We show that the current density dependence of microstructural failure in such narrow conductors differs significantly from that observed for widths above 1 &mgr;m. At 0.6 &mgr;mnas low as 1 is obtained compared withn=2 at 1.2 &mgr;m for microstructure‐related failure of long, multilayer stripes. The number of voids formed during accelerated testing and their average nucleation rate appear to be independent of the current density for 0.6 &mgr;m stripes, contrary to findings for wider stripes. It is suggested that growth of voids determines the failure kinetics of narrow stripes. ©1995 American Institute of Physics.

ISSN:0003-6951    

DOI:10.1063/1.113659

出版商:AIP    

年代:1995

数据来源: AIP

摘要:

Microstructure ofc‐BN films synthesized by the ion‐plating method were observed and characterized by high resolution electron microscopy and microdiffraction. Thec‐BN films of ∼0.2 &mgr;m thickness were deposited on top of ∼0.05 &mgr;m ofh‐BN, which was oriented with itsc‐axis parallel to the substrate. Lattice image taken along the ⟨011⟩ direction showed thatc‐BN film was well crystallized with an interplanar distance ∼2.1 A˚, although the grain size was extremely small, from 5 to 20 nm. Further, the microdiffraction pattern along the ⟨011⟩ direction by focusing the electron beam to ∼20 A˚, clearly showed that the small grains consisted of a single crystal ofc‐BN. ©1995 American Institute of Physics.

ISSN:0003-6951    

DOI:10.1063/1.113660

出版商:AIP    

年代:1995

数据来源: AIP

摘要:

Lead zirconate titanate (PZT) thin film was formed on Pt/Ta/Si3N4/Si(100) substrate at 400 °C by sputtering and then annealed at 650 °C in air. The PZT film was 1 &mgr;m thick and had dielectric permittivity of 980, loss tangent of 0.05, remanent polarization of 31 &mgr;C/cm2, and coercive field of 110 kV/cm. Piezoelectric property of the film formed on silicon cantilever was estimated from the converse effect. Poling at 5 kV/mm increased the property by a factor of 1.2 to 3.4, resulting in converse piezoelectric constant (d31) varying from −84 to −102 pC/N. ©1995 American Institute of Physics.

ISSN:0003-6951    

DOI:10.1063/1.113661

出版商:AIP    

年代:1995

数据来源: AIP

摘要:

A new fabrication method of optical waveguides using direct bonding of lithium niobate single crystals without using any bonding agents has been developed. The bonded interface was found very uniform and the bonding was performed in an atomic scale in spite of a relatively low heat‐treatment temperature of 400 °C. It was confirmed to be possible to fabricate optical waveguides using the direct bonding. This method is very attractive to obtain high‐performance optical guided‐wave devices because of its versatility. ©1995 American Institute of Physics.

ISSN:0003-6951    

DOI:10.1063/1.113662

出版商:AIP    

年代:1995

数据来源: AIP

摘要:

A thick, homoepitaxial diamond film was deposited on the microcracked (100) tip of a brilliant cut type Ia natural diamond anvil by microwave plasma‐assisted chemical vapor deposition (MPCVD). The rapid (up to 20 &mgr;m/h), highly anisotropic growth resulted in a modification of the original geometry of the central flat and culet regions. The size of the diamond culet grew from 350 to ∼800 &mgr;m in diameter in about 8 h. The deposited film was characterized by optical microscopy, micro‐Raman and photoluminescence (PL) spectroscopy. Raman analysis of the deposit confirms that its crystalline quality is comparable to that of the substrate, and that it contains no amorphous or graphitic phases of carbon. The epitaxial overlayer exhibits two prominent PL bands not observed from the substrate with zero‐phonon (ZPL) lines at 1.945 and 2.156 eV, which are attributed to nitrogen‐related defect complexes. The present work shows the potential viability of high growth rate homoepitaxy by MPCVD for numerous industrial and scientific applications, such as high pressure research. ©1995 American Institute of Physics.

ISSN:0003-6951    

DOI:10.1063/1.113663

出版商:AIP    

年代:1995

数据来源: AIP

摘要:

This contribution deals with reactive growth of boron‐nitride films by a rf nitrogen‐sputtering process from a boron‐metal target; thus nitrogen is functioning both as sputter and reactive gas. Only few and superficial reports of reactive sputter depositions from a metallic boron target in various argon/nitrogen mixtures exist, compared to the number of reports on rf sputtering from a BN target. Nitrogen sputtering of boron‐metal has previously not been reported. It was shown by Fourier‐transform infrared (FTIR) spectroscopy that the hexagonal structure of BN exclusively was deposited. Sputter rates were measured and showed no dependence on the reactive‐gas flow and only a marginal dependence on sputter‐gas mixtures containing 20% of krypton, argon, or helium. The reported nitrogen‐sputtering process appears to be appropriate for exploration of the key parameters for phase control in BN growth and for additional surface engineering processes such as substrate bias and post‐ion bombardment. ©1995 American Institute of Physics.

ISSN:0003-6951    

DOI:10.1063/1.113664

出版商:AIP    

年代:1995

数据来源: AIP

摘要:

Atomic oxygen, which can be liberated as an intermediate product in the decomposition of N2, is shown to be effective in removing N previously incorporated in SiO2layers grown in N2O. This removal results in a N distribution that is sharply peaked at the Si–SiO2interface for oxides grown in N2O by rapid thermal oxidation, but in a flat N distribution for N2O oxides grown in a furnace where the concentration of atomic oxygen is generally not substantial at the wafer position. This effect provides a means of tuning N profiles in a manner that may be useful for optimizing oxide quality. ©1995 American Institute of Physics.

ISSN:0003-6951    

DOI:10.1063/1.113665

出版商:AIP    

年代:1995

数据来源: AIP

摘要:

Then‐type doping of GaN by organometallic vapor phase epitaxy using Si2H6on sapphire has been demonstrated. The electron concentration depended linearly on Si2H6to trimethylgallium mole fraction ratio. State‐of‐the‐art values of 300 K electron mobility were obtained for electron concentrations from 1×1017–4×1019/cm3with no apparent increase in compensation at either the lowest or highest concentrations studied. Electron concentrations obtained using a given concentration of disilane were constant with growth temperature in the range 980–1040 °C. ©1995 American Institute of Physics.

ISSN:0003-6951    

DOI:10.1063/1.113666

出版商:AIP    

年代:1995

数据来源: AIP

摘要:

Direct experimental evidence of excitation transfer in the recombination via deep defects in silicon is provided, by a novel approach of Fourier transform photoluminescence excitation spectroscopy. The 735 meV iron‐related defect in Si is used as a model case. It is shown that this defect can be excited via two deep states of other centers that give rise to broad lines in the excitation spectrum at 976.3 and 1115.6 meV. The linewidths of these features infer extremely efficient transfer processes. Such an efficient excitation transfer is expected to play an important role in excitation and recombination processes in silicon. ©1995 American Institute of Physics.

ISSN:0003-6951    

DOI:10.1063/1.113667

出版商:AIP    

年代:1995

数据来源: AIP