摘要:

Measurements of the time dependence of the coloration (formation of HxWO3) of amorphous films of WO3are described and analyzed in terms of a barrier for current flow at the WO3‐electrolyte interface. A novel feature is that as coloration proceeds, the chemical potential of hydrogen in the HxWO3increases, opposing further coloration.

ISSN:0003-6951    

DOI:10.1063/1.88653

出版商:AIP    

年代:1976

数据来源: AIP

摘要:

Measurements have been made of the electrical and optical properties of Au–n‐type silicon Schottky‐barrier solar cells (SBSC) in which the metal and semiconductor are separated by a thin interfacial oxide layer ∼10–23 A˚ thick. Measurements of theV‐Icharacteristics showed that the value ofVocis increased by up to 38% and the maximum conversion efficiency by as much as 35% when compared with cells having no grown oxide layer.

ISSN:0003-6951    

DOI:10.1063/1.88654

出版商:AIP    

年代:1976

数据来源: AIP

摘要:

Optically induced dark‐line defects (DLD’s) in GaAs‐Ga1−xAlxAs double‐heterostructure (DH) wafers have been observed by x‐ray topography for the first time using the x‐ray anomalous transmission effect. This topography, which is sensitive to defects in the thin epitaxial layers, has been successfully applied to the observation. As a result, it has been observed that DLD’s oriented along ⟨110⟩ directions are composed of dislocations with Burgers vectors of (1/2)a⟨110⟩ parallel to the growth surface. It is also shown that the DLD’s originate from both substrate dislocations and crystal edges.

ISSN:0003-6951    

DOI:10.1063/1.88655

出版商:AIP    

年代:1976

数据来源: AIP

摘要:

Results obtained with lead sulfide photoconductive insulated‐gate field‐effect transistors (photo‐IGFET’s) are presented. Detectivity modulation is provided by the gate electrode. Then‐type PbS film was depleted of carriers by applying a negative gate potential, and the detectivity was increased by a factor of 200 while the noise remained constant. Detectivities of 2×1010cm Hz1/2/W were obtained at 173 °K and 500 Hz for a 180° field of view and a 300 °K background. The devices exhibited stable operating characteristics and showed no significant performance change after 18 months under ambient laboratory conditions. They were fabricated entirely by vacuum deposition in a single pumpdown, and the various conducting, insulating, and semiconducting films were deposited successively through accurately registered metal shadow masks.

ISSN:0003-6951    

DOI:10.1063/1.88656

出版商:AIP    

年代:1976

数据来源: AIP

摘要:

Nitrogen ions were implanted into indirect‐gap AlxGa1−xAs (x=0.53) and photoluminescence measurements were made at 2 °K as a function of annealing temperature. After sufficient annealing three emission bands were observed presumably due to the substitution of the nitrogen atoms with the host As atoms and the integrated intensity of the luminescence of the wafer increased by about 200 times compared with that of the unimplanted and annealed wafer. This can probably be ascribed to the formation of isoelectronic traps in the AlxGa1−xAs : N system.

ISSN:0003-6951    

DOI:10.1063/1.88657

出版商:AIP    

年代:1976

数据来源: AIP

摘要:

The preparation of an all‐amorphous thin‐filmp‐njunction is described. Thea‐Si films were produced by the glow discharge decomposition of silane, mixed with trace amounts of donor or acceptor impurities. The current‐voltage characteristics of the junction were investigated in the range from 150 to 300 K.

ISSN:0003-6951    

DOI:10.1063/1.88658

出版商:AIP    

年代:1976

数据来源: AIP