摘要:

Backscattering of He ions and Seemann‐Bohlin x‐ray diffraction techniques have been used to investigate the composition and growth kinetics of hafnium silicide formed from thin films of hafnium sputter deposited on silicon. The stable‐phase HfSi was formed in the temperature region 550–750°C. Zirconium and argon impurities were present in the Hf films at the level of 2.5 at.&percent;. During the formation of the HfSi phase, these impurities served as markers which were used to determine the diffusing species. We conclude that Si is the diffusing species.

ISSN:0003-6951    

DOI:10.1063/1.1654565

出版商:AIP    

年代:1973

数据来源: AIP