11. |
New Magnetic Material Having Ultrahigh Magnetic Moment |
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Applied Physics Letters,
Volume 20,
Issue 12,
1972,
Page 492-494
T. K. Kim,
M. Takahashi,
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摘要:
The change of the saturation magnetization of Fe films with the pressure of nitrogen during deposition ranging from 2 × 10−5to 7 × 10−3Torr has been investigated systematically. We found a new magnetic material which has the highest saturation magnetization at room temperature, 2050 G, among those of all the magnetic materials. This was attributed to Fe16N2, which has a bct structure, and the magnetic moment associated with Fe atoms of Fe16N2was deduced to be 3.0 &mgr;B.
ISSN:0003-6951
DOI:10.1063/1.1654030
出版商:AIP
年代:1972
数据来源: AIP
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12. |
Ionization Instability in Atmospheric‐Pressure Gas Discharges |
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Applied Physics Letters,
Volume 20,
Issue 12,
1972,
Page 495-496
T. W. Johns,
J. A. Nation,
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摘要:
A photographic and oscillographic study of discharges in helium‐carbon‐dioxide mixtures at atmospheric pressure has shown that fine filaments develop in the discharge column. The origin of these nonuniform discharge paths is discussed, and a means for maximizing the energy input to the plasma prior to filamentation is presented. This process is of relevance to the design of TEA lasers.
ISSN:0003-6951
DOI:10.1063/1.1654031
出版商:AIP
年代:1972
数据来源: AIP
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13. |
High‐Pressure Pulsed CO2Chemical Transfer Laser |
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Applied Physics Letters,
Volume 20,
Issue 12,
1972,
Page 497-499
T. O. Poehler,
M. Shandor,
R. E. Walker,
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摘要:
The exothermic chain reactions between deuterium and fluorine have been used to produce intense laser emission from carbon dioxide in a high‐pressure pulsed transfer laser. Stable mixtures of D2&sngbnd;F2&sngbnd;CO2diluted in He and cooled to −60°C were used as a fuel. Reactions initiated by flash photolysis of this system produced 10.6‐&mgr;m radiation with peak power of 200 kW and total energy of 5 J in dilute mixtures at total pressures up to 1 atm. The output power, laser pulse duration, and time of maximum gain are found to be strongly dependent on partial pressures of the constituents, total pressure of reactive components, nature of the diluents, and degree of refrigeration of the mixture.
ISSN:0003-6951
DOI:10.1063/1.1654032
出版商:AIP
年代:1972
数据来源: AIP
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14. |
Tunable GaAs Laser in an External Dispersive Cavity |
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Applied Physics Letters,
Volume 20,
Issue 12,
1972,
Page 499-500
R. Ludeke,
E. P. Harris,
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摘要:
Tunability of the cw radiation from a GaAs injection laser in an external dispersive cavity was achieved over a range of 150 Å about a center wavelength of 8525 Å at 77°K. The emitted radiation was analyzed with a Fabry‐Perot etalon. Under certain conditions single‐mode operation with cw output power as large as 17 mW was observed. Half‐width of such modes was estimated to be less than 350 MHz.
ISSN:0003-6951
DOI:10.1063/1.1654033
出版商:AIP
年代:1972
数据来源: AIP
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15. |
cw Laser Action on 31 Transitions in Tellurium Vapor |
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Applied Physics Letters,
Volume 20,
Issue 12,
1972,
Page 501-504
W. T. Silfvast,
M. B. Klein,
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摘要:
We have observed 31 cw laser transitions in the spectrum of singly ionized Te II, ranging in wavelength from 4843 to 9378 Å. 16 transitions were observed with He as a buffer gas, and 20 transitions were observed with Ne (5 were common to both gases). The experimental evidence indicates that charge transfer is the dominant excitation mechanism for both gases.
ISSN:0003-6951
DOI:10.1063/1.1654034
出版商:AIP
年代:1972
数据来源: AIP
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16. |
Information Storage Using Inhibited Cathodoluminescence |
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Applied Physics Letters,
Volume 20,
Issue 12,
1972,
Page 504-506
H. E. Bishop,
R. P. Henderson,
P. Iredale,
D. Pooley,
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摘要:
It has been shown that reversible information storage in crystals can be achieved using the inhibition of cathodoluminescence by defects produced by electron irradiation. Since an electron beam of constant energy is used to access the store and to execute the binary operations of write, erase, and read, the addressing problems are minimized. The writing and erasing times are on the order of a few microseconds, and the reading time can be a few hundred nanoseconds.
ISSN:0003-6951
DOI:10.1063/1.1654035
出版商:AIP
年代:1972
数据来源: AIP
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17. |
Laser‐Induced Refractive‐Index Change in As&sngbnd;S&sngbnd;Ge Glasses |
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Applied Physics Letters,
Volume 20,
Issue 12,
1972,
Page 506-508
Yoshiro Ohmachi,
Takeo Igo,
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摘要:
Effect of light irradiation on evaporated chalcogenide glass films of an As&sngbnd;S&sngbnd;Ge system has been studied. In order to make quantitative measurements of refractive‐index change resulting from light irradiation, light diffraction efficiency from the phase grating produced in the films with the technique of holographic storage has been measured. The maximum refractive‐index change of 0.056 has been obtained in an As2S3film. This value is two orders of magnitude higher than that of Fe‐doped LiNbO3single crystals. Light irradiation onto the films is considered to have two competing effects, one being thermal and the other purely optical.
ISSN:0003-6951
DOI:10.1063/1.1654036
出版商:AIP
年代:1972
数据来源: AIP
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18. |
CO2Waveguide Gas Laser |
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Applied Physics Letters,
Volume 20,
Issue 12,
1972,
Page 508-510
Richard E. Jensen,
Mary S. Tobin,
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摘要:
The characteristics of a CO2waveguide gas laser are described. An output power of 2.5 W was obtained from a discharge tube having a 23.7‐cm length and a 3.3‐mm diameter. The output mode pattern was very stable and insensitive to disturbances of the resonator and indicates the laser output is predominantly theEH11waveguide mode. The power output was sensitive to mirror position, and maximum power was obtained when the centers of curvature of the mirrors were a few centimeters inside the waveguide.
ISSN:0003-6951
DOI:10.1063/1.1654037
出版商:AIP
年代:1972
数据来源: AIP
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19. |
Nonlinear Forward Drift of Electrons in a Laser Beam |
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Applied Physics Letters,
Volume 20,
Issue 12,
1972,
Page 511-512
O. S. Lieu,
E. E. H. Shin,
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摘要:
Electrons interacting with laser radiation acquire a nonlinear drift velocityvD= e2E02/2m2c&ohgr;2in the forward longitudinal direction, thus giving rise to a dc current. Although its magnitude is too small to contribute to the ``heating'' of electrons, it may nevertheless prove useful in a laser‐operated solid‐state device using a low‐effective‐mass semiconductor.
ISSN:0003-6951
DOI:10.1063/1.1654038
出版商:AIP
年代:1972
数据来源: AIP
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20. |
Significance of Electric Fields on the Growth of Thin Metal Films |
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Applied Physics Letters,
Volume 20,
Issue 12,
1972,
Page 512-514
L. E. Murr,
H. P. Singh,
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摘要:
Thin films of Au, Ag, Pt, Pd, In, Sn, Bi, and Te were vacuum vapor deposited onto air‐cleaved NaCl (001) substrates in the absence of an electric field and in the presence of dc fields (in the plane of the substrate), ranging in intensity from 10 to 103V/cm. The vacuum environments were varied between 10−6and 10−9Torr, and evaporation rates ranged from 10 to 103Å/sec. Substrate temperatures were varied from 25 to 350°C for a distribution of mean film thicknesses ranging from 15 to 1200 Å. No significant effects of an electric field applied in the plane of the substrate were observed upon examination and comparison of representative film samples by transmission and scanning electron microscopy.
ISSN:0003-6951
DOI:10.1063/1.1654039
出版商:AIP
年代:1972
数据来源: AIP
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