摘要:

Implanted noble gas atoms of Xe have been used as diffusion markers in the growth study of three silicides: Ni2Si, VSi2, and TiSi2. Backscattering of MeV He has been used to determine the displacement of the markers. We found that while Si atoms predominate the diffusion in VSi2and TiSi2, Ni atoms are the faster moving species in Ni2Si.

ISSN:0003-6951    

DOI:10.1063/1.1655546

出版商:AIP    

年代:1974

数据来源: AIP

摘要:

Deposited films of transition metals (Ti, V, and Ni) have been diffused into LiNbO3crystals to form low‐loss TE and TM mode optical waveguides. Using Ti, single‐mode low‐loss waveguides which confine the guided light to within ∼1 &mgr;m of the surface have been constructed. The choice of diffusion parameters allows independent control of important waveguide parameters.

ISSN:0003-6951    

DOI:10.1063/1.1655547

出版商:AIP    

年代:1974

数据来源: AIP

摘要:

Saturated absorption of monochromatic radiation by a Doppler‐broadened transition in NH2D has been measured as a function of intensity. The transition was Stark tuned into coincidence with the 10.6‐&mgr;mP(20) line of a CO2laser. We thereby determined the dependence of the saturation intensity on pressure (5–120 mTorr) and beam radius (0.70–1.25 mm).

ISSN:0003-6951    

DOI:10.1063/1.1655548

出版商:AIP    

年代:1974

数据来源: AIP

摘要:

The electron energy distribution function has been numerically determined from the Boltzmann equation for some typical discharge conditions in CO and its mixtures. Collisions of the second kind have also been incorporated in the equation and it is found that the consideration of the second kind of collisions is important when the upper states are highly excited. This is, indeed, the case for the laser active medium.

ISSN:0003-6951    

DOI:10.1063/1.1655549

出版商:AIP    

年代:1974

数据来源: AIP

摘要:

Forced mode locking of a TEA CO laser has been achieved on a number of vibrational‐rotational transitions. Peak powers have been measured in excess of 1 kW with detector‐limited pulsewidths in the nanosecond regime.

ISSN:0003-6951    

DOI:10.1063/1.1655550

出版商:AIP    

年代:1974

数据来源: AIP

摘要:

Photoconductivity has been studied inp‐type and high‐resistivityn‐type silicon compensated by cobalt. Threshold energies of 0.505, 0.537, and 0.572 eV are observed to be independent of temperature within the experimental accuracy of ±2 meV. This is the first direct experimental evidence of the temperature independence of a deep level in Si. The photoconductivity which is stronger forp‐type samples than forntype leads to its identification as a new deep level 0.521 eV ±2 meV from the valence band; the phototransitions are phonon assisted.

ISSN:0003-6951    

DOI:10.1063/1.1655551

出版商:AIP    

年代:1974

数据来源: AIP

摘要:

Series arrays of nearly identical superconducting proximity effect bridges have been fabricated in Nb/Ta thin films. Arrays with up to 500 bridges respond cooperatively to incident radiation and produce voltage steps in response to incident 30–20 000‐MHz radiation atV=(number of bridges in array)×(h&ngr;/2e).

ISSN:0003-6951    

DOI:10.1063/1.1655552

出版商:AIP    

年代:1974

数据来源: AIP