摘要:

The effects of dose, implantation temperatures, and annealing on the electrical properties of Zn‐implanted GaAs0.62P0.38were measured. Zinc ion implantation was performed with 20‐keV ions at temperatures between room temperature and 450 °C. The abnormal property that the effective surface concentration exceeds the implanted Zn dose was obtained for the samples implanted at room temperature.

ISSN:0003-6951    

DOI:10.1063/1.1655200

出版商:AIP    

年代:1974

数据来源: AIP

摘要:

Thermally stimulated current (TSC) measurements have been performed onp‐njunctions in GaP grown by double liquid phase epitaxy. Several deep states have been observed in both thenandpsides of the junction, and a correlation has been established between the presence and concentration of some of these traps and the quantum efficiency of the corresponding light‐emitting diode (LED). It has also been observed that the degradation of the LED by heating under forward bias leads to the appearance or increase of the intensity of some peaks in the TSC spectrum.

ISSN:0003-6951    

DOI:10.1063/1.1655201

出版商:AIP    

年代:1974

数据来源: AIP

摘要:

Microwave oscillations in the light output of mesa‐stripe GaAs&sngbnd;Ga1−xAlxAs double‐heterostructure lasers have been observed after degradation. The same lasers showed no oscillations before degradation. The experimental evidence indicates that the oscillations are caused by repetitiveQswitching, with dark‐line regions in the degraded units acting as saturable absorbers.

ISSN:0003-6951    

DOI:10.1063/1.1655202

出版商:AIP    

年代:1974

数据来源: AIP

摘要:

Photoluminescence and carrier lifetime data are obtained on low‐dislocation‐density(etch pits ≳ 5 × 103/cm2)n‐type In1−xGaxP (x=0.52) epitaxial layers grown on (100) surfaces of GaAs by means of a constant‐temperature liquid‐phase‐epitaxial (CT‐LPE) process. These crystals are of exceptional quality and readily lase from 77 to 300 °K. The index dispersion relation (n‐&lgr; dn/d&lgr;) is determined from the laser mode spacing &Dgr;&lgr; in the temperature range 77–300 °K and indicates that at higher thresholds laser operation shifts toward donor tail states. By means of optical phase shift measurements the carrier lifetime (77°K) is examined as a function of wavelength from the spontaneous regime to well above laser threshold. The lifetime data indicate that there is a correlation between a dip in the lifetime due to stimulated emission and the region of the spectrum where the first laser modes appear. These data, and similar data onp‐type crystals, indicate that CT‐LPE In1−xGaxP should be very promising for the development of room‐temperature visible spectrum lasers.

ISSN:0003-6951    

DOI:10.1063/1.1655203

出版商:AIP    

年代:1974

数据来源: AIP

摘要:

A novel switching effect has been found in amorphous semiconductor devices having an aluminum interlayer on one electrode. These devices operate as memory devices in one polarity and as threshold switching devices in the opposite polarity. The setting time is very short if the aluminum side of the device is positive. If no aluminum interlayer is present, a long pulse with special trailing edge is necessary to accomplish memory setting. Threshold switching voltage and memory breakdown voltage of the device with an interlayer have the same value.

ISSN:0003-6951    

DOI:10.1063/1.1655204

出版商:AIP    

年代:1974

数据来源: AIP

摘要:

A‐15 superconductors show very large decreases in critical temperature after 60 °C neutron irradiations exceeding about 1018neutrons/cm2(E>1 MeV). These effects are not observed in superconductors such as Nb, NbN, or Nb&sngbnd;Ti.

ISSN:0003-6951    

DOI:10.1063/1.1655205

出版商:AIP    

年代:1974

数据来源: AIP

摘要:

Superconductive Nb&sngbnd;Nb point contacts have been studied with 9.5‐&mgr;m radiation from CO2lasers. Two models are considered to explain the experiments: one is Werthamer's Josephson junction model and the other is a thermally modulated Josephson junction. The evidence favors Werthamer's model but is not conclusive.

ISSN:0003-6951    

DOI:10.1063/1.1655206

出版商:AIP    

年代:1974

数据来源: AIP

摘要:

A microscopic theory of the residual surface resistance is presented and compared with experimental results in superconducting lead and niobium. It is shown that for frequencies above 1 GHz, direct electromagnetic generation of acoustic shear waves can account for the measured residual surface resistance.

ISSN:0003-6951    

DOI:10.1063/1.1655207

出版商:AIP    

年代:1974

数据来源: AIP

摘要:

Photographic evidence is presented of the back‐face spallation of 1.0‐mm 6061‐T6 aluminum samples irradiated in vacuum by 1.5‐nsec 1.06‐&mgr; laser pulses. Thinner samples (0.5 mm) have also been spalled and complete back‐face separation has been achieved. It is demonstrated that the degree of spallation is a strong function of fluence and that target coupling can be enhanced by means of prepulses.

ISSN:0003-6951    

DOI:10.1063/1.1655208

出版商:AIP    

年代:1974

数据来源: AIP

ISSN:0003-6951    

DOI:10.1063/1.1655209

出版商:AIP    

年代:1974

数据来源: AIP