摘要:

The effectiveness of a number of charge‐removal techniques during ion implantation into insulators has been examined by monitoring the ion‐induced characteristic x‐ray emission of target atoms during proton implantation. Successful removal of charge buildup occurs for samples which are coated with a thin conducting surface layer and for samples which have intimate contact between the implanted region and a conducting mask and are flooded with a defocused ion beam.

ISSN:0003-6951    

DOI:10.1063/1.1654268

出版商:AIP    

年代:1972

数据来源: AIP

摘要:

Ultrasonic surface waves propagating on a piezoelectric substrate are accompanied by electric fields which can interact with charge carriers in an adjacent medium. This interaction and the resulting attenuation of the elastic surface wave have been measured for different metal films on a quartz single‐crystal substrate. As the films are deposited on the substrate, the resistivity of the films decreases continuously, and it was found that the interaction between the ultrasonic wave and the charge carriers in the film reaches a maximum for a resistivity of the films on the order of 5 M&OHgr;/sq, but the magnitude of the resulting attenuation of the surface wave was dependent on the film material. Values of the maximum attenuation varied between 0.27 dB/cm for bismuth and 2.8 dB/cm for copper at a frequency of 31.5 MHz. A theoretical model was developed which showed good agreement with the experimental results for the materials used.

ISSN:0003-6951    

DOI:10.1063/1.1654269

出版商:AIP    

年代:1972

数据来源: AIP

摘要:

The distribution of fluorine ions implanted into gallium arsenide has been determined through the use of Auger electron spectroscopy combined with thin‐layer removal by argon ion sputtering. This technique is a chemical measure of the ion distribution and thus is not affected by the electrical properties of the implanted species. The leading edge and depth of the peak fluorine concentration are in fair agreement with the calculated LSS distribution; however, the trailing edge exhibits a tail which extends much deeper than expected. This tail is assumed to be due to damage‐enhanced diffusion.

ISSN:0003-6951    

DOI:10.1063/1.1654270

出版商:AIP    

年代:1972

数据来源: AIP

摘要:

GaAs samples were implanted with tellurium at room temperature or at 150 °C and annealed to 750 °C with an SiO2or Si3N4protective layer. The highest electron concentrations and brightest photoluminescence were obtained for the hot implants with a Si3N4protective layer.

ISSN:0003-6951    

DOI:10.1063/1.1654271

出版商:AIP    

年代:1972

数据来源: AIP