摘要:

The ablation process of phosphorus by H atoms has been applied to the measurement of the H atom density in the downstream current of a H2plasma. The calibration of the etching rate in terms of absolute density of H atoms has been done on the basis of their decay kinetics in the afterglow region. H atom density data have been determined by operating H2plasmas at different values of gas flow rate, rf power, and pressure. ©1995 American Institute of Physics.

ISSN:0003-6951    

DOI:10.1063/1.113791

出版商:AIP    

年代:1995

数据来源: AIP

摘要:

Films of composition 0.27 PbO, 0.24 ZrO2, 0.27 TiO2, 0.22 NiO, and containing micrometer sized lead zirconate titanate (PZT) crystallites and nanometer sized nickel particles have been synthesized by a sol‐gel technique. Metal particles have diameters in the range 2.0–7.6 nm. The films exhibit values of dielectric constant in the range 220–410 at a frequency of 1 kHz at room temperature. The optical absorption coefficient of the films shows a peak at ∼400 nm. The peak position shifts to higher wavelengths as the metal particle size is increased. The Mie theory is used to explain the results. ©1995 American Institute of Physics.

ISSN:0003-6951    

DOI:10.1063/1.113792

出版商:AIP    

年代:1995

数据来源: AIP

摘要:

A planar radio frequency inductively coupled plasma has been used to deposit diamond onto scratched silicon. This plasma source has been developed recently for use in large area semiconductor processing and holds promise as a method for scale up of diamond growth reactors. Deposition occurs in an annulus which coincides with the area of most intense optical emission from the plasma. Well‐faceted diamond particles are produced when the substrate is immersed in the plasma. ©1995 American Institute of Physics.

ISSN:0003-6951    

DOI:10.1063/1.113793

出版商:AIP    

年代:1995

数据来源: AIP

摘要:

The composition, growth mechanism, and phases of carbon nitride thin films obtained from the reaction of laser ablated carbon and atomic nitrogen have been investigated. The nitrogen composition was found to increase to a limiting value of 50% as the fluence was decreased for laser ablation at both 532 nm and 248 nm. Analysis of these data shows that the overall growth rate determines the nitrogen composition, and suggests that a surface reaction between carbon and nitrogen represents a key step in the growth mechanism. Infrared spectroscopy has also been used to assess the phases present in the carbon nitride thin films. The implications of these results to the stoichiometry of covalent carbon nitride are discussed. ©1995 American Institute of Physics.

ISSN:0003-6951    

DOI:10.1063/1.113794

出版商:AIP    

年代:1995

数据来源: AIP

摘要:

Tantalum encapsulated copper lines, 0.5–2.0 &mgr;m wide, were passivated and heat treated to determine the effect of stress state, microstructure, and grain growth on stress‐induced voiding. Void frequency and location were studied as a function of linewidth and heat treatment. Higher stress, narrow lines voided less than lower stress, wider lines. Voiding was also strongly dependent upon thermal treatment before and after passivation. These results are explained by defining preferred sites for void formation and by considering the release of free volume during grain growth in passivated lines. ©1995 American Institute of Physics.

ISSN:0003-6951    

DOI:10.1063/1.113795

出版商:AIP    

年代:1995

数据来源: AIP

摘要:

The growth of epitaxial MgO films on Sb‐passivated (001)GaAs using pulsed laser deposition has been investigated. The temperature at which the Sb‐passivation layer was desorbed was found to have a significant effect on the interfacial properties of MgO/GaAs heterostructures. Heating the substrates to 350–380 °C in vacuum resulted in a (1×3) GaAs surface reconstruction suitable for the growth of epitaxial MgO films. However, residual Sb was found to persist on the GaAs surface at temperatures as high as 500 °C. MgO growth after Sb desorption at 350–380 °C resulted in a nonuniform interfacial layer which varied in thickness from ∼0.1 to 1.5 nm, whereas substrates heated to 500 °C prior to MgO growth displayed abrupt interfaces. Capacitance–voltage measurements indicated a qualitative difference in the interfacial electronic properties for the two cases. ©1995 American Institute of Physics.

ISSN:0003-6951    

DOI:10.1063/1.113796

出版商:AIP    

年代:1995

数据来源: AIP

摘要:

We report a new and fast laser‐drilling technique in polyimide. This drilling process consists of two steps. First, the polyimide is irradiated with millisecond pulse of visible laser light. Second, the debris inside and around the holes are ultrasonically cleaned in water in a short time. In this report, we also analyze the emitted light originated from the laser induced polyimide decomposition that leads to the drilling. The mechanism behind the drilling is believed to be associated to a volcano‐eruption‐like behavior. This inexpensive technique provides good quality drilling, high throughput, and very promising applications in packaging technology. ©1995 American Institute of Physics.

ISSN:0003-6951    

DOI:10.1063/1.113797

出版商:AIP    

年代:1995

数据来源: AIP

摘要:

Picosecond photothermal displacement experiments were performed to resolve the rise time of theactualsurface expansion of laser‐illuminated metals. A rise time of ∼100 ps was resolved for Ni, in agreement with the predictions of a hydrodynamic model. The applicability of the photothermal effect to time‐resolved scanning probe microscopies is addressed. ©1995 American Institute of Physics.

ISSN:0003-6951    

DOI:10.1063/1.113798

出版商:AIP    

年代:1995

数据来源: AIP

摘要:

Interdiffusion of Al and Ga in Al0.4Ga0.6As/GaAs and Al0.3Ga0.2In0.5P/Ga0.6In0.4P quantum wells has been investigated by measuring the photoluminescence of samples annealed at temperatures from 850 to 1065 °C with and without an SiO2cap. At 1000 °C under an SiO2cap, the Al–Ga interdiffusion coefficient is found to be at least two orders of magnitude larger for an AlGaAs/GaAs quantum well compared to an AlGaInP/GaInP quantum well within the same sample. By comparing calculated photoluminescence shifts with measured values, an activation energy of 4.5 eV is found for the Al–Ga interdiffusion in an AlGaAs/GaAs quantum well under an SiO2cap. ©1995 American Institute of Physics.

ISSN:0003-6951    

DOI:10.1063/1.113799

出版商:AIP    

年代:1995

数据来源: AIP

摘要:

High resolution resistance measurements have been performed on isolated aluminum vias to study resistance changes induced by electromigration. The via test structures consisted of a 1.5 &mgr;m diameter, 0.8 &mgr;m deep interconnect between two aluminum alloy metallization layers separated by a TiN layer. The TiN interlayer acts as a diffusion barrier for the electromigration process at which material may accumulate or be depleted to induce resistance changes. The resistance changes were measured with a resolution of 10−9&OHgr;/s for a ∼0.1 &OHgr; via. A dc current caused both increases and decreases in the resistance, depending in the current direction, which recovered completely when the current was removed. The initial resistance changes were found to be proportional tot1/2as would be expected for a diffusive electromigration process. Because both the geometry and diffusion barrier of these structures are well defined a quantitative analysis can be made which is found to be most consistent with copper as the initial diffusing element. ©1995 American Institute of Physics.

ISSN:0003-6951    

DOI:10.1063/1.113800

出版商:AIP    

年代:1995

数据来源: AIP