摘要:

The multiply scanned electron beam method has been applied to annealing selenium implanted gallium arsenide. The conditions necessary to give good electrical activation and mobility have been established for doses from 5×1012to 1×1014ions cm−2. Partial activation was achieved in uncapped samples for doses of 1×1013cm−2and greater. However, to achieve higher activation of these doses, and significant activation of low doses, encapsulation with Si3N4was necessary. It is shown that rapid electron beam annealing lasting only a few seconds gave equivalent results to conventional furnace annealing methods.

ISSN:0003-6951    

DOI:10.1063/1.92707

出版商:AIP    

年代:1981

数据来源: AIP

摘要:

A modified carrier collection model of a‐Si:H Schottky‐barrier solar cells is proposed to explain the falloff of short wavelength carrier collection efficiency. Schottky‐barrier lowering due to image force effects alters the potential distribution near the metal‐semiconductor interface. This altered potential decreases the carrier collection in a‐Si:H solar cells by as much as 30%. Design considerations to improve carrier collection efficiency are also proposed.

ISSN:0003-6951    

DOI:10.1063/1.92708

出版商:AIP    

年代:1981

数据来源: AIP

摘要:

We have examined pulse laser‐irradiated ⟨110⟩ Al single crystals near the threshold energy for melting by ion channeling and electron microscopy. We find that slip deformation occurs at incident energies <3.5 J/cm2, where melting does not occur for our 20 nsec (full width at half maximum) pulse width, as well as at energies ≳3.5J/cm2, where a near‐surface layer is melted. This slip deformation results in an increase in the channeling minimum yield &khgr;min, which is attributed to small‐angle misalignments between slip planes across the surface. The abrupt increase in &khgr;minwith melting suggests that channeling can provide a sensitive monitor of the threshold for melting.

ISSN:0003-6951    

DOI:10.1063/1.92709

出版商:AIP    

年代:1981

数据来源: AIP

摘要:

Argon ions were implanted at the backsurface of silicon wafers prior to the formation of the oxide of the metal‐oxide‐silicon capacitors. The implantation resulted in improved oxide. The improvement is speculated to be a consequence of the gettering of the metallic impurities by the dislocations caused by the ion implantation gettering which occurs during oxidation and prevents the impurities from being absorbed into the oxide of the subsequent capacitors.

ISSN:0003-6951    

DOI:10.1063/1.92710

出版商:AIP    

年代:1981

数据来源: AIP

摘要:

The room‐temperature drift velocity of holes in silicon has been measured for electric fields ranging from 9 to 234 kV/cm using a microwave time‐of‐flight technique. The measured velocity saturates at a value of 0.96±0.05×107cm/sec at a field strength of 175 kV/cm.

ISSN:0003-6951    

DOI:10.1063/1.92711

出版商:AIP    

年代:1981

数据来源: AIP

摘要:

A heterostructure, consisting of two GaAs quantum wells each of 40 A˚ width separated by a 40‐A˚ Al0.5Ga0.5As barrier, has been grown by molecular beam epitaxy and examined optically for Al‐Ga disorder (alloy clustering). The photoluminescent and excitation spectra showed no evidence of clustering, in marked contrast to results on a similar structure grown by metal‐organic chemical vapor deposition. Thus any clusters present must be less than 40 A˚ in diameter. The spectra also support an island‐like interface with steps of ∼one monolayer in height and ≳300 A˚ in lateral extent.

ISSN:0003-6951    

DOI:10.1063/1.92712

出版商:AIP    

年代:1981

数据来源: AIP

摘要:

Ann‐channel metal‐insulator‐semiconductor charge‐coupled device has been successfully demonstrated inp‐type epitaxial Hg0.7Cd0.3Te (&lgr;co≃5.0 &mgr;m, 77 K) grown by liquid‐phase epitaxy on CdTe substrate. A three‐bit, three‐phase device was operated at 77 K, yielding a charge transfer efficiency greater than 0.995 between 5 and 50 kHz clock frequencies. Ion‐implantedn+/pdiodes facilitated signal input and direct output signal detection.

ISSN:0003-6951    

DOI:10.1063/1.92713

出版商:AIP    

年代:1981

数据来源: AIP

摘要:

The linear coefficient of thermal expansion of semiconducting Hg1−xCdxTe has been determined for alloy compositionsx= 0.20 and 0.30, of interest to infrared detector technology. The temperature dependence is similar to that of other compounds of zinc blende structure. The thermal expansion coefficient becomes negative at 64 K and is insensitive to composition except below 30 K, where the alloys richer in HgTe exhibit a deeper negative minimum.

ISSN:0003-6951    

DOI:10.1063/1.92714

出版商:AIP    

年代:1981

数据来源: AIP

摘要:

A new majority‐carrier photodetector, called a modulated barrier photodiode (MBP), grown by molecular beam epitaxy has been developed. In sharp contrast to a bipolar phototransistor, the optical gain of MBP increases with decreasing incident power. An optical gain of 1000 at 1.5 nW incident power and a fall time of 600 psec have been obtained. In addition to the application for uses as a detector in an optical communication system, the device points to the feasibility of realizing a solid‐state triode.

ISSN:0003-6951    

DOI:10.1063/1.92715

出版商:AIP    

年代:1981

数据来源: AIP

摘要:

Periodic surface topography is observed in Si films deposited on fused quartz when the films are crystallized by a scanning laser or electron beam. The formation and character of this topography depends upon the structure of the Si film. With amorphous Si, periodic features can be formed at the leading edge of the beam. We thick these are produced by self sustained crystallization as has been previously studied in Ge and other materials. Liberation of latent heat in the film enables the crystallization front to propagate a short distance ahead of the beam. In the moving temperature gradient this motion is periodic and therefore leaves a periodic crystal grain pattern. With polycrystalline silicon films, recrystallization requires the beam to melt the film. Periodic structures form at the trailing edge of the molten pool. Similar ripples have been studied in other materials. The temperature distribution in the melt can cause a surface tension gradient that pulls material to the edges. When this material solidifies, expansion of the silicon may enhance the ripple amplitude.

ISSN:0003-6951    

DOI:10.1063/1.92716

出版商:AIP    

年代:1981

数据来源: AIP