11. |
GAIN AND SATURATION IN TRANSVERSE FLOWING CO2&sngbnd;N2&sngbnd;He MIXTURES |
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Applied Physics Letters,
Volume 15,
Issue 9,
1969,
Page 302-304
Russell Targ,
William B. Tiffany,
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摘要:
Gain and saturation are investigated in a kW CO2&sngbnd;N2&sngbnd;He gas‐transport laser. The active medium flows at 35 m/sec transverse to the probe laser beam. Gain falls exponentially downstream of the excitation region with a characteristic decay distance of 7 cm, giving a decay time of approximately 2 msec. A saturation parameter of approximately 250 W cm2is determined. This large value is due to rapid flow which sweeps the molecules through the laser beam in a time shorter than the upper state relaxation time.
ISSN:0003-6951
DOI:10.1063/1.1653008
出版商:AIP
年代:1969
数据来源: AIP
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12. |
UNIDIRECTIONAL CHANNELING AND BLOCKING: A NEW TECHNIQUE FOR DEFECT STUDIES |
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Applied Physics Letters,
Volume 15,
Issue 9,
1969,
Page 305-307
L. C. Feldman,
B. R. Appleton,
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摘要:
This letter reports measurements of a new type of double alignment channeling process which simultaneously uses the ``channeling effect'' and ``blocking effect'' in a relatively simple geometry. Results for the case of 500‐keV He ions impinging on ZnO single crystals are shown to be in fair agreement with a calculation of the magnitude of this effect based on the Lindhard model of particle channeling. It is shown that the sensitivity of this measurement to the detection of atomsnoton normal lattice sites is a factor of 10–50 greater than in the usual channeling experiment.
ISSN:0003-6951
DOI:10.1063/1.1653009
出版商:AIP
年代:1969
数据来源: AIP
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13. |
PRODUCTION AND ANNEALING OF LATTICE DISORDER IN SILICON BY 200‐keV BORON IONS |
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Applied Physics Letters,
Volume 15,
Issue 9,
1969,
Page 308-310
J. E. Westmoreland,
J. W. Mayer,
F. H. Eisen,
B. Welch,
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摘要:
We have investigated the lattice disorder produced in Si by 200‐keV B implantations using the standard channeling technique. We found the disorder production strongly temperature‐dependent from about −85°C to room temperature. The annealing of the residual disorder present after such a B implantation takes place at higher temperatures. Our results indicate that the nature of the lattice disorder produced in Si by low dose ion implantation depends on the mass of the ion implanted.
ISSN:0003-6951
DOI:10.1063/1.1653010
出版商:AIP
年代:1969
数据来源: AIP
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