摘要:

We have studied the interaction of hydrogen with thermal donors in silicon using transient capacitance and current spectroscopy. We find that a large degree of thermal donor passivation (a factor of 40) can be achieved by hydrogen plasma exposure at 120 °C. The residual electrical activity is shown to arise from perturbedE(0.07) andE(0.15) donor states. Annealing at 200 °C almost completely reactivates the low concentration of thermal donors present in these samples. A model involving different incorporation sites for hydrogen is proposed to explain the results.

ISSN:0003-6951    

DOI:10.1063/1.98144

出版商:AIP    

年代:1987

数据来源: AIP

摘要:

Silicon‐doped GaAs grown by molecular beam epitaxy has been characterized by Hall measurements, infrared local vibrational mode (LVM) absorption, secondary ion and laser source mass spectroscopy. Highly doped samples with [Si]∼3×1019cm−3show only a low carrier concentration of 8×1017cm−3. LVM spectroscopy shows that SiGadonors are compensated predominantly by [Si‐X] complexes, whereXhas been assigned previously to a gallium vacancy (VGa). Other compensating impurities are not present in the layers at significant concentrations.

ISSN:0003-6951    

DOI:10.1063/1.98265

出版商:AIP    

年代:1987

数据来源: AIP

摘要:

We have investigated the effect of rapid thermal annealing (RTA) for the compositional disordering of Si‐implanted AlGaAs/GaAs superlattices (SL) in comparison with that of furnace annealing (FA). By using RTA (970 °C, 10 s), the implantation damage can be eliminated without disordering the SL, while the disordering occurs when FA (850 °C, 30 min) is used. Secondary ion mass spectrometry analyses show that the difference between RTA and FA is due to the extent of Si diffusion into the AlGaAs/GaAs SL.

ISSN:0003-6951    

DOI:10.1063/1.98145

出版商:AIP    

年代:1987

数据来源: AIP

摘要:

Bonding between similar or dissimilar surfaces with metal and glass thin‐film interlayers as well as bulk glass plates using an electric field assisted bonding technique at 160 °C or less is described. This low‐temperature field‐assisted bonding is achieved using, e.g., few &mgr;m thick glass films rf magnetron sputter deposited from Na or Li silicate glasses, and 0.05–1.0 &mgr;m thick Al, Sn, Mg, and Hf films. The bond strength thus achieved is found to be greater than the cohesive strength of the glass used. Results from x‐ray photoelectron spectroscopy analyses confirm the migration across the glass layer and the plating out on the cathode surfaces of mobile ions such as Na+or Li+during field‐assisted bonding. The migration and plating out of mobile ions can be detected in 10 s after the potential is applied and whether actual bonding between the metal and glass occurs or not. The possible bonding mechanism based on these XPS results is proposed.

ISSN:0003-6951    

DOI:10.1063/1.98146

出版商:AIP    

年代:1987

数据来源: AIP

摘要:

Theory, engineering design, fabrication, and experimental test of the first completely monolithic grating amplifier realized in silicon are described. Experimental results are presented for frequencies between 0.1 and 2.0 GHz at 300 K for the device, referred to as the solid state space harmonic amplifier structure. Electronic gain is about 1.5 dB/mm with a cold circuit loss of 4.6 dB/mm for the 200‐&mgr;m‐long interaction region device.

ISSN:0003-6951    

DOI:10.1063/1.98147

出版商:AIP    

年代:1987

数据来源: AIP

摘要:

A 1 mm×3 mm monolithic two‐dimensional array (incoherent) of 112 mass‐transported buried‐heterostructure lasers with integrated beam deflectors has been fabricated with good uniformity. An average cw output of 14 mW per laser and an average optical flux of 57 W/cm2have been obtained when the array is operated one section (approximately 14% of the total area) at a time. The total cw output of the entire array is thermally limited to 0.7 W.

ISSN:0003-6951    

DOI:10.1063/1.98148

出版商:AIP    

年代:1987

数据来源: AIP

摘要:

A stable chemisorption state was discovered for benzene on amorphous silicon at room temperature. Its establishment implies high reactivity and a catalytic role of the substrate in breaking C–H bonds. This suggests that amorphous silicon, similar to cleaved silicon, can catalyze interesting surface chemical reactions involving aromatic molecules.

ISSN:0003-6951    

DOI:10.1063/1.98149

出版商:AIP    

年代:1987

数据来源: AIP

摘要:

We demonstrate that unmonochromatized synchrotron radiation stimulates the formation of surface‐reacted nitride species on silicon at room temperature. The experimental evidence was obtained by exposing a NH3‐covered Si(111) surface to synchrotron radiation. This class of phenomena is relevant for the manufacturing technology of submicron electronic devices.

ISSN:0003-6951    

DOI:10.1063/1.98150

出版商:AIP    

年代:1987

数据来源: AIP

摘要:

A very high transconductance (260 mS/mm) has been achieved for the first time with an InGaAs/InP junction field‐effect transistor. The transistor was fabricated using a chemical etching technique which allowed the fabrication of submicrometer gate (0.5 &mgr;m). Very low values of access resistance were obtained using a self‐aligned technology.

ISSN:0003-6951    

DOI:10.1063/1.98151

出版商:AIP    

年代:1987

数据来源: AIP

摘要:

We identify a new type of electromagnetic oscillator which utilizes the negative differential conductivity of a quantum well tunnel junction to drive surface‐plasmon oscillations on the outside boundaries of the junction. We calculate the complex propagation constant as a function of frequency for the antisymmetric gap‐mode surface plasmon on a state of the art GaAs/AlGaAs double‐barrier tunnel junction. The surface‐plasmon gain coefficient is found to be positive for frequencies up to 5 GHz. Single‐mode oscillation of the surface plasmon at frequencies near 5 GHz is predicted on a tunnel junction with a lateral dimension equal to about 150 &mgr;m.

ISSN:0003-6951    

DOI:10.1063/1.98152

出版商:AIP    

年代:1987

数据来源: AIP