摘要:

An acoustic shear surface wave can be guided by the interface between two semi‐infinite media in contact across a planar interface, if at least one of the two media is magnetoelastic. The dispersion relation for such a wave is obtained in the case that it propagates in a direction normal to the direction of the spontaneous magnetization in each medium, which is assumed to be parallel to the interface. A solution of the dispersion relation is obtained analytically for a particular simple case.

ISSN:0003-6951    

DOI:10.1063/1.92451

出版商:AIP    

年代:1981

数据来源: AIP

摘要:

Using optical transmission and transmission electron microscopies, structural features of scanned laser crystallized amorphous Si films on Si3N4/glass substrates have been investigated as a function of the laser scan speed. We have found the existence of a critical speedVSC≃30 cm/sec below which only the solid‐phase furnace crystallization mechanism occurs yielding fine‐grained Si films. For laser scan speeds higher thanVSC, the crystallization mechanism is one of coherent and rapid crystallization, which has yielded Si films containing crystallites of dimensions up to 1×1 mm. For this regime, the velocity of the crystallization front is estimated to be as high as 1000 cm/sec.

ISSN:0003-6951    

DOI:10.1063/1.92452

出版商:AIP    

年代:1981

数据来源: AIP

摘要:

A tristability is observed in the electric‐field‐induced liquid‐crystal (LC) cholesteric‐to‐nematic phase transformation. The stable memory associated with the tristability has a potential application to display devices. The N‐C relaxation characteristics, which determine the tristability, are found to be related to the ratio of LC‐film thickness to pitch length.

ISSN:0003-6951    

DOI:10.1063/1.92453

出版商:AIP    

年代:1981

数据来源: AIP

摘要:

A 10‐nsec pulsed ruby laser was used to prepare atomically clean silicon surfaces in UHV. With picosecond Nd:YAG laser pulses at 532 amd 266 nm, the amorphous patterns formed on the atomically clean silicon surfaces in UHV were compared with those formed in air and other ambient conditions. Results show that the picosecond laser‐induced phase transition of silicon does not depend on the ambient conditions or on the native surface oxide layer of silicon.

ISSN:0003-6951    

DOI:10.1063/1.92454

出版商:AIP    

年代:1981

数据来源: AIP

摘要:

The reactive ion etching of (100) GaAs in CCl2F2and mixed CCl2F2+Ar discharges has been investigated. Anisotropic etching with removal ratesRof 0.8 mm/min have been obtained in pure CCl2F2discharges operated at 5.3 Pa (40 mTorr) and −3 kV, whereas the physical sputtering rate in pure Ar discharges under these conditions was only 0.04 mm/min. A combination of optical emission and absorption spectroscopies have been used to show that in CCl2F2and even in dilute 10% CCl2F2+90% Ar discharges operated under the same conditions, physical sputtering is not a primary etching mechanism for GaAs, although is is important for minimizing residual carbon accumulation. Rather, etching is believed to occur by the formation and desorption of Ga and As halides with the rate limiting step being the removal of GaF3. The kinetics of this process are aided by ion‐bombardment‐enhanced diffusion and stimulated desorption.

ISSN:0003-6951    

DOI:10.1063/1.92455

出版商:AIP    

年代:1981

数据来源: AIP

摘要:

Thermally induced defects in Si crystals annealed at low temperatures around 500 °C have been investigated by photoluminescence measurements. It has been found that photoluminescence spectra of annealed Si crystals strongly depend on the concentrations of oxygen and carbon impurities. Many sharp luminescence lines, whose spectral energy positions and temperature behaviors are quite different from those of the usual bound‐exciton luminescence, have been found for the first time. Furthermore, strong, broad luminescence bands have been observed for annealed CZ‐Si with high oxygen and low carbon contents.

ISSN:0003-6951    

DOI:10.1063/1.92456

出版商:AIP    

年代:1981

数据来源: AIP

摘要:

Disilicide of rare‐earth metals (Dy, Er, Ho, and Gd) and Y have been formed by reacting the metallic film on bothn‐ andp‐type silicons at around 350 °C for Schottky‐barrier height measurement usingI‐Vtechnique. A passivation coating of W, or Pt, or both was used to prevent the rare earth from oxidation. Schottky‐barrier heights of about 0.4 eV onn‐Si and 0.7 eV onp‐Si were determined.

ISSN:0003-6951    

DOI:10.1063/1.92457

出版商:AIP    

年代:1981

数据来源: AIP

摘要:

The effect of lithium on the electrical properties of polycrystalline silicon has been studied using scanning light spot and Hall‐effect measurements. It was found that the addition of lithium to polycrystalline silicon significantly improved the majority‐carrier mobility and reduced the minority‐carrier recombination at the grain boundaries. A possible mechanism for the interaction of Li with grain boundaries is discussed.

ISSN:0003-6951    

DOI:10.1063/1.92458

出版商:AIP    

年代:1981

数据来源: AIP

摘要:

The infrared absorption of thermal SiO2has been measured using the attenuated total reflectance technique. The samples were subjected to various water diffusion and annealing treatments. Electron trapping was also measured in similar samples. The infrared measurements show the presence of SiH, SiOH, and H2O groups in the SiO2films, particularly after H2O diffusion. Examination of both the infrared absorption results and the electron trapping results show that the electron trap with a cross section of 1×10−17cm2is associated with SiOH groups, and that the electron trap with a cross section of 2×10−18cm2is associated with H2O.

ISSN:0003-6951    

DOI:10.1063/1.92459

出版商:AIP    

年代:1981

数据来源: AIP

摘要:

For selected compositions of the variable band‐gap alloy semiconductor In1−xTlxTe the photoconductive response has been observed over the special range from 0.6 to 12.2 mm. The band‐gap energy was found to decrease linearly as a function of composition from 0.72 eV atx= 0.48 to a zero band‐gap atx≃0.06. All compositions in this range were found to beptype.

ISSN:0003-6951    

DOI:10.1063/1.92460

出版商:AIP    

年代:1981

数据来源: AIP