摘要:

The electrical and luminescent properties of the GaN epitaxial films grown on AlN‐coated sapphire by reactive molecular beam epitaxy have been studied. The GaN films on AlN epitaxial films have larger Hall mobilities and show more intense cathodoluminescence peaks at a wavelength of 360 nm than those of the GaN films grown directly on sapphire, which suggests that the crystal qualities of GaN films are improved by use of AlN‐coated sapphire as substrates. The lattice matching and small difference of the thermal expansion coefficients between GaN and AlN are considered to result in the improvements.

ISSN:0003-6951    

DOI:10.1063/1.93952

出版商:AIP    

年代:1983

数据来源: AIP

摘要:

High quality single crystal GaN films with extremely uniform thicknesses have been grown in low pressure metalorganic chemical vapor deposition system using the reaction of (C2H5)3Ga with NH3. Electrical and optical properties of the layers were measured. Schottky barriers were fabricated after compensating the background donor concentration (typicallyND∼1×1019cm−3) with Be+or N+implants. These Schottky barriers were electrically and optically characterized.

ISSN:0003-6951    

DOI:10.1063/1.93953

出版商:AIP    

年代:1983

数据来源: AIP

摘要:

White electroluminescence (EL) was observed for the first time in the hydrogenated amorphous silicon‐carbon alloya‐SixC1−x@B:H(x=0.2–0.4) at room temperature. Experiments were carried out for the devices which consisted of an amorphous film sandwiched between two insulating layers of Y2O3. EL is observable above a threshold ac voltage of 100 V. The EL spectrum is slightly different from the photoluminescence spectrum of the amorphous film.

ISSN:0003-6951    

DOI:10.1063/1.93960

出版商:AIP    

年代:1983

数据来源: AIP

摘要:

The time‐resolved photoconductive response of several natural and synthetic semiconducting (IIb) diamonds has been measured at room temperature using an optoelectronic cross‐correlation technique. The response times are between 100 and 300 ps, indicating a capture cross section for the photoexcited holes of ∼4×10−13cm−2. We have found that IIb diamonds can serve as a simple, rugged pulsed laser detector for 0.45<&lgr;<4.2 &mgr;m.

ISSN:0003-6951    

DOI:10.1063/1.93961

出版商:AIP    

年代:1983

数据来源: AIP

摘要:

We show that only one of the four Raman active modes in Ga0.47In0.53As shows the required symmetry behavior for longitudinal optical (LO) phonons. An additional mode previously supposed to be LO shows mixed‐mode behavior and may be disorder activated. Our results prove that only one phonon mode in Ga0.47In0.53As is active in scattering electronic carriers, and thus in determining both electron and hole mobilities.

ISSN:0003-6951    

DOI:10.1063/1.93962

出版商:AIP    

年代:1983

数据来源: AIP

摘要:

The operation of planar doped barrier diodes is studied using a numerical device simulation which solves the carrier energy transport equation self‐consistently with the current continuity equation and Poisson’s equation. This allows the effects of space‐charge injection and carrier heating, which have been neglected in previous studies of these devices, to be studied quantitatively. Results for two different doping profiles are presented and compared with the results calculated using the conventional quasi‐equilibrium transport model. Significant differences between the results are found, demonstrating the importance of including hot‐carrier effects in modeling these devices.

ISSN:0003-6951    

DOI:10.1063/1.93963

出版商:AIP    

年代:1983

数据来源: AIP

摘要:

A novel fine line patterning technique for the fabrication of submicron devices is described. It is based on local oxidation and anisotropic dry etching of an aluminum film acting as a substitutional mask. Etch selectivities greater than 4:1 between plasma oxidized and unoxidized aluminum have been observed. 1500‐A˚‐wide lines with essentially vertical walls have been achieved with this technique. These Al patterns can either be used directly in device structures or as masks for the etching of underlying layers.

ISSN:0003-6951    

DOI:10.1063/1.93964

出版商:AIP    

年代:1983

数据来源: AIP

摘要:

Transient electrical conductance measurements have been made on 0.45‐&mgr;m silicon‐on‐sapphire during pulsed laser annealing with 25‐ns ruby irradiation. The photoconductive contribution to the transient current was sufficiently small that the entire melt and resolidification process could be directly observed. The technique yields quantitative measures of melt depths, melting velocities (5–13 m/s), and solidification velocities (2.8–3.3 m/s). Combined with the complementary techniques of time‐resolved reflectivity, energy transmission, and calorimetric energy absorption, transient conductance provides a powerful new diagnostic for investigating melt dynamics.

ISSN:0003-6951    

DOI:10.1063/1.93965

出版商:AIP    

年代:1983

数据来源: AIP

摘要:

An experiment was carried out to study oxidation‐enhanced and oxidation‐retarded diffusion (OED and ORD) of Sb in (100) and (111) Si wafers oxidized in dry O2at 1160 °C. The ORD data of (100) wafers agree well with those of Mizuo and Higuchi and with the prediction of a model assuming that Si self‐interstitials and vacancies coexist in Si in thermal equilibrium at high temperatures. A small adjustment to the interstitial supersaturation values is needed to bring the ORD/OED data of (111) wafers to fit with the model satisfactorily. This indicates the existence of a mechanism which injects vacancies into (111) wafers in addition to the normal mechanism of interstitial injection due to SiO2growth.

ISSN:0003-6951    

DOI:10.1063/1.93966

出版商:AIP    

年代:1983

数据来源: AIP

摘要:

Measurements of the capacitance due to photogenerated electrons and holes that are displaced by the electric field are described. A model calculation shows that the photocapacitance is a measure of the drift mobility of the carriers.

ISSN:0003-6951    

DOI:10.1063/1.93967

出版商:AIP    

年代:1983

数据来源: AIP