摘要:

An extremely weak uv source conditions a large CO2laser gas discharge with the aid of the seed gas tri‐n‐propylamine. With roughened Rogowski‐shaped electrodes a glow discharge is achieved without a uv source. Evidence exists that the seed gas plays a role in the gas discharge itself.

ISSN:0003-6951    

DOI:10.1063/1.88274

出版商:AIP    

年代:1975

数据来源: AIP

摘要:

The recently observed short‐circuit capacitance of illuminated photovoltaic solar cells has been attributed to injection of minority carriers into the base by the perfectly shortedn‐pjunction, a result incompatible with conventional junction theory. In the present letter, this capacitance is treated as the result of voltage modulation of the space‐charge width and subsequent redistribution of the minority carriers in the base, all in the context of conventional junction theory. Comparison with experimental results shows that this model gives the correct magnitude of the effect and predicts the dependence on spectral distribution of the illumination and the circuit test frequency.

ISSN:0003-6951    

DOI:10.1063/1.88275

出版商:AIP    

年代:1975

数据来源: AIP

摘要:

A technique is proposed for identifying trapping kinetics from thermally stimulated conductivity TSC) measurements, which is based on the influence of lifetime on TSC spectra. The same technique may be used to measure the trap energy if fast trapping dominates. The usefulness of the method is illustrated with some results of measurements on Zn‐compensated silicon.

ISSN:0003-6951    

DOI:10.1063/1.88254

出版商:AIP    

年代:1975

数据来源: AIP

摘要:

A system is described for stabilizing a cw dye laser frequency to a high‐finesse optical cavity. The length of this optical cavity is locked to a CH4‐stabilized He‐Ne laser with a tunable frequency‐offset technique. A very fast servo system using an intracavity KD*P crystal), a long dye laser cavity, and the stabilized optical cavity result in an absolute frequency stability of 1 kHz for an integration time of 10−4sec and 300 Hz for 300 sec. Intensity is stabilized to one part in 104.

ISSN:0003-6951    

DOI:10.1063/1.88255

出版商:AIP    

年代:1975

数据来源: AIP

摘要:

Dark currents in MNS capacitors are studied as a function of metal electrode material and insulator thickness. Dark currents sensitively reflect different electrode materials for thin (∼200 A˚) nitride films. Thus, it is found that high‐work‐function metals increase conduction under metal positive bias by enhanced hole injection and low‐work‐function metals increase conduction under metal negative bias by enhanced electron injection. Similar polarity differences are observed betwenn‐type andp‐type degenerate Si substrates. These contact differences disappear as the nitride becomes thicker and the thickness of trapped space‐charge layers near the contacts becomes small compared to the nitride thickness.

ISSN:0003-6951    

DOI:10.1063/1.88256

出版商:AIP    

年代:1975

数据来源: AIP

摘要:

A significantly high non‐Ohmic forward voltage has been observed inn‐GaAs/p‐Ge andp‐GaAs/n‐Ge injection heterojunction diodes which have hard reverse electrical characteristics and whose wide‐gap emitters were of relatively low doping levels. Theory and experiment are compared and conditions for enhancing this phenomenon are stated. An SEM micrograph of the grown Ge epitaxial layer is included and growth conditions are described.

ISSN:0003-6951    

DOI:10.1063/1.88257

出版商:AIP    

年代:1975

数据来源: AIP

摘要:

The transport roles of electron‐electron (e‐e) and intravalley impurity scattering (neutral and ionized) inn‐Si at 77 K were studied under high‐electric‐field (0–3000 V/cm) nonequilibrium conditions, by comparing the theoretical and experimental ratio of ⟨111⟩ to ⟨100⟩ field‐dependent conductivity over a range of free‐electron concentrations that fully encompasses this ratio’s variation with concentration (2×1013–2×1016cm−3). Theoretical calculations were performed using a numerical technique which allows an ’’exact’’ solution to the Boltzmann transport equation. Electron‐electron scattering was included in the calculation using the Fokker‐Plank formulation. It was found that e‐e scattering was primarily responsible for the decrease in the conductivity ratio with increasing concentration through its effect on repopulation; both intravalley and intervalley e‐e scattering were found to be important. Neutral impurity scattering also had a significant effect on repopulation. An apparent increase in free‐electron concentration with field was observed in the more heavily doped samples.

ISSN:0003-6951    

DOI:10.1063/1.88258

出版商:AIP    

年代:1975

数据来源: AIP

摘要:

A pyrolytic Si3N4encapsulation technique has been used to permit reproducible annealing of implanted GaAs at temperatures as high as 950 °C. At low doses, electrical activity ≳70% has been achieved for both Si and Se. At high doses, sheet carrier concentrations and sheet resistivities of 1.8×1014/cm2and 20 &OHgr;/&laplac;, respectively, for Si and 7×1013/cm2and 44 &OHgr;/&laplac;, respectively, for Se have been measured.

ISSN:0003-6951    

DOI:10.1063/1.88260

出版商:AIP    

年代:1975

数据来源: AIP

摘要:

Impurity redistribution during thermal oxidation in then‐channel transistor of SOS/CMOS can result in an inversion of silicon material type (frompton) along the island edge and extending from drain to source. This inverted island edge produces excessive drain‐to‐source current leakage. We show that the electron‐beam‐induced‐current (EBIC) mode of operation in the scanning electron microscope (SEM) is an effective method of observing inverted island edges.

ISSN:0003-6951    

DOI:10.1063/1.88261

出版商:AIP    

年代:1975

数据来源: AIP

摘要:

Room‐temperature operation of an optically integrated double heterostructure (DH) GaAs‐AlxGa1‐xAs injection laser with a distributed Bragg reflector (DBR), with threshold current densities of 5 kA/cm2is reported. The DBR was in the form of a third‐order grating which was ion milled on a passive single heterostructure (SH) waveguide section with the latter taper coupled to the active DH section. The observed half‐power spectral bandwidth was ≲1 A˚. A highly collimated beam output with a half‐power divergence angle of ≲0.3° was also achieved by coupling the scattered light from the oil‐immersed grating at the Bragg angle with a prism.

ISSN:0003-6951    

DOI:10.1063/1.88262

出版商:AIP    

年代:1975

数据来源: AIP