摘要:

Intense laser emission at 3577 A˚ (v′=0 of theC3&pgr;ustate tov″=1 of theB3&pgr;gstate of the nitrogen molecule) has been demonstrated to take place by an addition of a large quantity of SF6as a foreign gas in a transversely excited nitrogen laser. The output at 3577 A˚ is increased with increasing partial pressure of SF6, until a total pressure of up to 250 Torr. With sufficient SF6added, the output at 3371 A˚ is increased by a factor of 1.3 as compared with the case of N2gas alone.

ISSN:0003-6951    

DOI:10.1063/1.88535

出版商:AIP    

年代:1975

数据来源: AIP

摘要:

Several dark‐current and photocurrent techniques have been used to determine the nature of high dark conductivity observed in oxides grown from polycrystalline silicon. Photocurrent measurements on polycrystalline Si‐SiO2‐Al MOS structures give idential interface energy barrier heights to those on single‐crystal Si‐SiO2‐Al MOS structures, and do not show the presence of any measurable oxide charge. Dark‐current measurements on polycrystalline Si MOS structures oxidized to varying degrees show an abrupt conductivity decrease when the polycrystalline Si is completely oxidized to the underlying single‐crystal Si substrate. It is concluded from these experiments that the high dark conductivity observed is an interface phenomenon that is due to localized field enhancement near the injecting contact. This field enhancement, not being due to positive oxide charge, is speculated to be caused by surface asperities.

ISSN:0003-6951    

DOI:10.1063/1.88536

出版商:AIP    

年代:1975

数据来源: AIP

摘要:

In As‐Se‐ (S) ‐Ge amorphous films, a remarkable difference of chemical etching rate between the heat‐treated state and the light‐irradiated state has been observed. Utilizing this characteristic, a relief‐type diffraction grating of the amorphous film was obtained (the pitch between grating lines, 0.86 &mgr;m). This grating has achieved a high diffraction efficiency of 15.8%, which was about 10 times greater than before chemical etching.

ISSN:0003-6951    

DOI:10.1063/1.88537

出版商:AIP    

年代:1975

数据来源: AIP

摘要:

An injection laser is described in which a semicircular GaAs active region is completely surrounded by Ga1−xAlxAs by using selective etching and a single liquid‐phase epitaxial growth.The active region dimensions can be made much more symmetric than those obtained with conventional stripe geometry lasers resulting in improved optical characteristics and low room‐temperature threshold currents.

ISSN:0003-6951    

DOI:10.1063/1.88538

出版商:AIP    

年代:1975

数据来源: AIP

摘要:

Magnetization as a function of temperature (4.2–300 °K) for the amorphous ferrimagnetic Gd‐Co‐Au alloys is analyzed by using a two‐sublattice model. The magnetization behavior is discussed in terms of the cobalt spin value, and the intersublattice and intrasublattice exchange constants. Magnetic domain wall properties are considered in an attempt to estimate the growth‐induced uniaxial perpendicular anisotropy.

ISSN:0003-6951    

DOI:10.1063/1.88539

出版商:AIP    

年代:1975

数据来源: AIP

ISSN:0003-6951    

DOI:10.1063/1.88550

出版商:AIP    

年代:1975

数据来源: AIP