摘要:

The impact ionization coefficients for electrons and holes have been measured in In0.2Ga0.8As/GaAs strained‐layer superlattices (SLS’s) for transport perpendicular to the superlattice. The pure electron and hole initiated primary photocurrents were produced inp+nmesa photodiodes having In0.1Ga0.9As alloy photon absorption regions and an SLS active region carrier concentration of 7.4×1015cm−3. The impact ionization coefficient for electrons is found to be larger than for holes with a ratio that varies from 1.8 at 2.7×105V/cm to 1.4 at 3.8×105V/cm.

ISSN:0003-6951    

DOI:10.1063/1.97174

出版商:AIP    

年代:1986

数据来源: AIP

摘要:

We report the first fabrication of a monolithic integrated circuit consisting of a Ga0.47In0.53As planar photoconductive detector (suitable for 1.3–1.55 &mgr;m wavelength optical communication systems) associated with a GaAs field‐effect transistor. The gain, response times, and noise properties of the photoconductive detector and the integrated photoreceiver have been investigated, taking into account particular aspects of the material and integrated circuit structure.

ISSN:0003-6951    

DOI:10.1063/1.97175

出版商:AIP    

年代:1986

数据来源: AIP

摘要:

We have developed a microcrystalline fluorinatedp+silicon alloy which has high dark conductivity and low optical loss. Incorporation of this material in single and tandem amorphous silicon alloy based solar cells has resulted in increased open circuit voltage and conversion efficiency.

ISSN:0003-6951    

DOI:10.1063/1.97176

出版商:AIP    

年代:1986

数据来源: AIP

摘要:

We have prepared by chemical beam epitaxy extremely high quality Ga0.47In0.53As/InP quantum wells with thickness as thin as 6 A˚. Emission as short as 1.09 &mgr;m at 2 K (1.14 &mgr;m at 300 K) was obtained. Very sharp intense efficient luminescence peaks due to excitonic transitions were obtained from all quantum wells. The photoluminescence (PL) linewidths at 2 K were the narrowest that have been ever reported for Ga0.47In0.53As quantum wells grown by any technique. In fact, these Ga0.47In0.53As quantum well linewidths are at least equal to the narrowest linewidths ever reported for the perfected GaAs/AlAs and GaAs/AlxGa1−xAs quantum wells. These linewidths indicate the ‘‘effective’’ interface roughness to be 0.12 lattice constant, which can be interpreted as that the quantum well was largely consisting of a big domain of the same thicknessLzperforated with a small fraction of small domains of (Lz+a0/2), wherea0(=5.86 A˚) is the lattice constant. No broadening due to band filling from impurities was found. Alloy broadening in Ga0.47In0.53As was limited to the intrinsic value of 1.3 meV. The PL energy upshifts measured in Ga0.47In0.53As quantum wells were in excellent agreement with theoretical values.

ISSN:0003-6951    

DOI:10.1063/1.97177

出版商:AIP    

年代:1986

数据来源: AIP

摘要:

The kinetics of implantation enhanced interdiffusion at GaAs‐GaxAl1−xAs interfaces is investigated by cathodoluminescence and transmission electron microscopy. Localized Ga+implantation leads to enhancement of the interdiffusion by about two orders of magnitude at 950 °C. A complete recovery of the optical quality of the material and local alteration of the band gap is observed after rapid thermal annealing. The role of intrinsic interdiffusion is identified. Control of the interdiffusion kinetics has allowed the fabrication of ultrasmall structures with good optical properties.

ISSN:0003-6951    

DOI:10.1063/1.97178

出版商:AIP    

年代:1986

数据来源: AIP

摘要:

High‐speed sampling of the voltage waveform on a microstrip transmission line is performed by exploiting the multiphoton photoelectric effect induced by a visible cw mode‐locked laser source. Energy analysis of the electrons emitted from the surface of the strip line is used to infer the emission point potential at the arrival time of the laser pulse. The technique may be applied to measure voltage waveforms on metallization lines of any integrated circuit or electronic device and is capable of picosecond time resolution and millivolt sensitivity.

ISSN:0003-6951    

DOI:10.1063/1.97179

出版商:AIP    

年代:1986

数据来源: AIP

ISSN:0003-6951    

DOI:10.1063/1.97637

出版商:AIP    

年代:1986

数据来源: AIP