摘要:

Lasing of a3He‐Xe laser excited by thermal neutron fluxes has been observed at 2.026, 3.508, and 3.652 &mgr;m. The dependence of output wavelength on partial pressure of Xe is presented.

ISSN:0003-6951    

DOI:10.1063/1.89267

出版商:AIP    

年代:1977

数据来源: AIP

摘要:

The degradation of cw double‐heterostructure semiconductor lasers is analyzed. It is clearly shown that the recoverable initial degradation mode of long‐life AlxGa1−xAs‐GaAs lasers is caused by a reduction of minority‐carrier lifetime, the effect of which is readily distinguished from other possible processes such as increased cavity loss or minority‐carrier leakage.

ISSN:0003-6951    

DOI:10.1063/1.89268

出版商:AIP    

年代:1977

数据来源: AIP

摘要:

The dark currents in Al‐nSi Schottky‐barrier solar cells are appreciably reduced by low‐temperature heat treatments (T<577 °C) which induce metallurgical reactions between the Al and Si. Open‐circuit voltages of these cells can be increased by more than 0.2 V as a result of this mechanism.

ISSN:0003-6951    

DOI:10.1063/1.89269

出版商:AIP    

年代:1977

数据来源: AIP

摘要:

n‐indium tin oxide/p‐indium phosphide (n‐ITO/p‐InP) solar cells have been prepared by ion‐beam deposition of indium tin oxide onp‐InP single‐crystal substrates. The cells have a solar power conversion efficiency of 14.4% at air mass 2 (AM2) when provided with antireflection coatings.

ISSN:0003-6951    

DOI:10.1063/1.89270

出版商:AIP    

年代:1977

数据来源: AIP

摘要:

We report the observation of inelastic electron tunneling spectra of molecules introduced into completely fabricated tunnel junctions. By using an external doping method several kinds of molecules have been introduced into Al–Al oxide–Pb diodes yielding strong spectra characteristic of the particular molecules. This technique is a new way of detecting and studying molecules interacting with surfaces. The high sensitivity and greater simplicity of this method increases possible applications of tunneling spectroscopy.

ISSN:0003-6951    

DOI:10.1063/1.89271

出版商:AIP    

年代:1977

数据来源: AIP

摘要:

Undesirable nonlinear ’’kinks’’ in light‐output–vs–current characteristics of stripe geometry double‐heterostructure (DH) injection lasers are significantly reduced by stabilizing the transverse modes along the junction plane. Built‐in passive guiding mechanism is introduced by growing planar (AlGa)As/GaAs DH layers on a grooved GaAs substrate.

ISSN:0003-6951    

DOI:10.1063/1.89272

出版商:AIP    

年代:1977

数据来源: AIP

摘要:

We treat theoretically, through the use of Bloch functions, a new semiconductor superlattice where the interaction of the conduction band in one host material with the valence band of the other host material plays an important role. The result indicates that this superlattice offers new intriguing features, realizable with the In1−xGaxAs‐GaSb1−yAsysystem. In addition, the tunneling probability is calculated across a barrier involving this system.

ISSN:0003-6951    

DOI:10.1063/1.89273

出版商:AIP    

年代:1977

数据来源: AIP

摘要:

Secondary ion mass spectrometry has been used to study the chemisorption of oxygen on W(100). Plots of O−versus O+and WO−2versus O+show large hysteresis in the adsorption‐desorption cycle. We propose to explain these observations by the structural and adsorption site changes during adsorption and thermal annealing of the adsorbed layer.

ISSN:0003-6951    

DOI:10.1063/1.89274

出版商:AIP    

年代:1977

数据来源: AIP

摘要:

Plasma oxidation of thin polycrystalline aluminum films (∼100 A˚) on GaAs has shown that oxidation of aluminum proceeds by an initial rapid grain‐boundary oxidation of the aluminum followed by a slower oxidation towards the centers of the individual grains. Continued oxidation results in the growth of Ga‐As‐ oxide layers on both sides of the Al‐oxide film indicating that the oxidation of GaAs proceeds by an electric‐field‐assisted in‐migration of oxygen through the Al‐oxide layer toward the interface and the out‐migration of Ga and As toward the surface. This oxidation process can be used to form an amorphous film of Al‐oxide on GaAs. By using the Al‐oxide film as a preferential filter for the migration of Ga and As, an amorphous Ga‐As‐oxide film with a Ga/As concentration ratio ofunityall the way to the GaAs substrate can also be achieved.

ISSN:0003-6951    

DOI:10.1063/1.89275

出版商:AIP    

年代:1977

数据来源: AIP

摘要:

Radiation with an integrated power of about 10−12W has been obtained from a microbridge Josephson junction. The output can be continuously tuned between 2 and 12 GHz. The frequency and current dependence of radiated power and linewidth are in disagreement with the resistively shunted junction model.

ISSN:0003-6951    

DOI:10.1063/1.89276

出版商:AIP    

年代:1977

数据来源: AIP