摘要:

A nonradiative dark region along a surface ripple is observed in optically and electrically excited GaP LPE layers. The region originates from the substrate interface and terminates at the ridge of the surface ripple. It is clearly distinguishable from the known one caused by dislocation in its features. Thep‐njunction breakdown voltage in this region is lower than that in the radiative region in a LPE layer. This fact suggests that in liquid‐phase epitaxy an impurity concentrated region is formed in the growing process of surface ripples. The existence of the region contributes to the deterioration of the characteristics of devices using thin LPE layers.

ISSN:0003-6951    

DOI:10.1063/1.89221

出版商:AIP    

年代:1977

数据来源: AIP

摘要:

A Monte Carlo procedure which makes it practicable to extend the calculation of hot electron distribution functions to rarely occupied ranges of the electron state is described. The method is illustrated by a calculation of the energy distribution, for semiconductor electrons in an electric field, as a function of distance in the drift direction from the initial position. For energies comparable to the ultimate average energy, the ’’thermalization’’ of the distribution occurs close to the starting point, but with increasing energy it occurs at increasing distances.

ISSN:0003-6951    

DOI:10.1063/1.89222

出版商:AIP    

年代:1977

数据来源: AIP

摘要:

An integrated injection laser‐waveguide‐detector device is described, fabricated from AlxGa1−xAs layers grown by liquid‐phase epitaxy. Reflectors are formed by a two‐step preferential etch procedure. For a laser cavity formed by one etched reflector and one cleaved mirror, an overall differential transfer efficiency of 10±1% has been measured at the detector after transmission through a 1‐&mgr;m‐thick passive waveguide 250 &mgr;m long. If both reflectors are etched, efficiencies as high as 2% are still observed.

ISSN:0003-6951    

DOI:10.1063/1.89223

出版商:AIP    

年代:1977

数据来源: AIP

摘要:

Experimental evidence of interface state generation due to the emission of leakage electrons from the silicon substrate into SiO2is presented. Interface states were measured on MNOS capacitors before and after temperature‐bias stress, where the electron emission process occurred, using the high‐frequency and quasistaticC‐Vtechnique. Electrical access to the silicon surface to vary the space‐charge width was made by the use of a very small diffusion underneath the field plate. The generation of interface states which can in turn cause device degradation is undoubtedly a reliability concern.

ISSN:0003-6951    

DOI:10.1063/1.89224

出版商:AIP    

年代:1977

数据来源: AIP

摘要:

Incorporation of GaAlAs potential barrier layers into the active regions of a heterostructurepnpninjection laser makes it possible to design Shockley diode lasers with low (3 kA/cm2) room‐temperature threshold currents.

ISSN:0003-6951    

DOI:10.1063/1.89225

出版商:AIP    

年代:1977

数据来源: AIP

摘要:

Two methods are described for fabrication of a DH stripe‐geometry laser where lateral current confinement is obtained with reverse‐biased junctions on both sides of the active layer. Threshold current densities, comparable in values to optimum values achieved in other stripe geometry lasers, are obtained as a function of top channel widths for lasers with single and double current confinement. The lasers exhibit clean stable mode patterns with excellent linearity of the optical output power as a function of injection current. Lasers with channel widths ≲14 &mgr;m operate in the lowest‐order transverse mode in the junction plane for currents up to ∼two times the threshold (an output power of 16 mW per mirror).

ISSN:0003-6951    

DOI:10.1063/1.89226

出版商:AIP    

年代:1977

数据来源: AIP

摘要:

Nb3Ir polycrystalline films with the A15 structure deposited on sapphire were used as substrates for the epitaxial growth of Nb3Ge because of the favorable lattice parameter match. The experimental results clearly show that epitaxial growth indeed occurs and helps to extend the range of homogeneity of the A15 phase up to 26.3 at.% Ge as compared with the thermodynamic equilibrium boundary at 19 at.% Ge. Furthermore, epitaxy results in a considerable rise in the superconducting transition temperature for Ge‐rich samples together with a reduction in the transition width.

ISSN:0003-6951    

DOI:10.1063/1.89227

出版商:AIP    

年代:1977

数据来源: AIP

摘要:

The analyses of Nb‐Ge films prepared by sputtering with a modified rf arrangement are reported. The results indicate the importance of thermalization of sputtered particles for the formation of the high‐transition‐temperature compound Nb3Ge.

ISSN:0003-6951    

DOI:10.1063/1.89228

出版商:AIP    

年代:1977

数据来源: AIP

摘要:

A simple perturbation method is used to study fluxon (soliton) interactions on a Josephson transmission line (JTL). This technique efficiently provides information needed in the design of JTL computer circuits. We study (i) fluxons interacting with other fluxons in the presence of both dissipation and an externally controlled current bias and (ii) fluxons interacting with microshorts. The dynamics of fluxon pinning to a microshort is described and threshold conditions for fluxon‐antifluxon annihilation are presented. We emphasize that in this process free fluxons become bound into ’’breathers’’, which in turn decay into ’’photons’’ of the Josephson waveguide.

ISSN:0003-6951    

DOI:10.1063/1.89229

出版商:AIP    

年代:1977

数据来源: AIP

摘要:

A new field‐access bubble detector is described and assessed in terms of signal‐strength propagation margins and technology benefits. In this design the detection and propagation functions of the detector are separated by means of a sandwich structure. The so‐called sandwich detector consists of a thin NiFe layer (detection), an insulation layer of SiO2, and a thick NiFe layer (propagation). The layers are structured with the aid of one mask (no alignment) while two gross masks (alignment accuracy within 25 &mgr;m) are used to create the connections to the detection layer. The measured sensitivity of a 35‐chevron stretcher sandwich detector, designed for 7‐&mgr;m bubbles (4&pgr;Ms=150 G), is 2 mV/mA.

ISSN:0003-6951    

DOI:10.1063/1.89235

出版商:AIP    

年代:1977

数据来源: AIP