摘要:

An acoustic microscope has been developed which utilizes liquid helium at temperatures less than 0.2 K as the coupling medium. At the operating frequency of 4.2 GHz, the acoustic attenuation of the helium is negligible and the acoustic wavelength is 570 A˚. Micrographs of a silicon integrated circuit are presented which demonstrate the good signal‐to‐noise ratio of the imaging and resolution better than 500 A˚.

ISSN:0003-6951    

DOI:10.1063/1.93796

出版商:AIP    

年代:1983

数据来源: AIP

摘要:

A general kinetic law governing the thermal growth of oxide films is presented. It encompasses the Deal–Grove linear‐parabolic growth law and Blanc’s growth law as two special cases; it extends to more general cases where the interface reaction rate has a power‐law dependence on oxidant pressure, such as observed in the thermal oxidation of silicon, where neither the Deal–Grove nor the Blanc growth law is applicable. The new growth law is required even for oxidation under atmospheric pressure because of the varying oxidant pressure at the Si–SiO2interface. Probable mechanisms for silicon oxidation are suggested.

ISSN:0003-6951    

DOI:10.1063/1.93797

出版商:AIP    

年代:1983

数据来源: AIP

摘要:

The direct formation of amorphous layers on (111) Ge, GaP, and GaAs crystals is demonstrated to occur when these are transiently melted with 2.5‐ns UV laser pulses below particular radiation energy density thresholds. Above these thresholds, the melt resolidification rate is reduced and in each case the (111) crystals exhibit a transition to a regime of profuse twin defect nucleation. Also for each material, laser melting of (001) crystal leads to defect‐free recrystallization when amorphization does not occur. All amorphous layers exhibit a cellular thickness modulation which may be due to a fundamental instability in the recrystallization interface.

ISSN:0003-6951    

DOI:10.1063/1.93798

出版商:AIP    

年代:1983

数据来源: AIP

摘要:

Argon ions were implanted either prior or subsequent to an ion implantation of boron into silicon wafers. After isochronal annealing at temperatures ranging from 500 to 900 °C, the samples were examined by a spreading resistance‐carrier concentration profile and secondary ion mass spectroscopy. It is shown that argon implantation at a dose sufficient to produce an amorphous layer inhibits the electrical activation and diffusion of boron implanted in silicon.

ISSN:0003-6951    

DOI:10.1063/1.93772

出版商:AIP    

年代:1983

数据来源: AIP

摘要:

Rutherford backscattering and proton induced x‐ray emission in combination with channeling have been used to investigate the specific site location of S and Si implanted in GaAs through the asymmetry in their channeling dips. A pronounced asymmetry is observed for ⟨110⟩ scans parallel to the {11¯0} plane in the case of S, whereas no such asymmetry is found for the case of Si. These results clearly indicate that S predominantly occupies one sublattice site which is shown to be the As site whereas Si occupies both Ga and As sites in about equal concentrations.

ISSN:0003-6951    

DOI:10.1063/1.93773

出版商:AIP    

年代:1983

数据来源: AIP

摘要:

The density of radiation‐induced interface traps in a post‐metal‐annealed (PMA) Al‐gate metal‐oxide‐semiconductor (metal/SiO2/Si) depends strongly on the linewidth of the metal gate over a wide range (1–750 &mgr;m) of linewidths studied, although there is no discernible dependence prior to the irradiation. The dependence is such that the narrower the linewidth, the fewer the radiation‐induced interface traps. Such dependence has been generally observed for bothp‐ andn‐type Si samples, for oxides grown in dry O2or steam at temperatures over a wide range (900–1000 °C), and for PMA treatment either in dry N2or in forming gas (10% H2+90% N2). The results can be qualitatively explained by a model based on the gate linewidth dependence of the SiO2/Si interfacial stress prior to irradiation, which affects the radiation sensitivity in accordance with the strained bond model.

ISSN:0003-6951    

DOI:10.1063/1.93774

出版商:AIP    

年代:1983

数据来源: AIP

摘要:

InxGa1−xAsyP1−yepilayers lattice matched to InP were grown from the liquid phase at temperatures far above the commonly used temperature range. The goal was to get off the unstable region corresponding to compositions emitting in the wavelength range of 1.2 &mgr;m<&lgr;<1.5 &mgr;m at 650 °C. In0.71Ga0.29As0.65P0.35(&lgr;=1.35 &mgr;m) layers thus grown have the highest electron Hall mobilities ever obtained in this material: &mgr;300 K=7000 cm2/Vs and &mgr;77 K=23 200 cm2/Vs forND−NA=8.1014cm−3. We suggest that a contribution to mobility limitation might be related to the composition modulations present in epilayers grown in the usual temperature range.

ISSN:0003-6951    

DOI:10.1063/1.93775

出版商:AIP    

年代:1983

数据来源: AIP

摘要:

A novel crystal growth technique for silicide epitaxy is presented which utilizes thin silicide (<60 A˚) template layers to pin the subsequent growth under ultrahigh vacuum conditions. Single crystal NiSi2films can be grown with either type A or type B orientations on Si (111). Continuous single crystal NiSi2is grown on Si (100) with a flat interface and uniform thickness. Thick CoSi2can be grown on Si (111) by a similar process using thicker templates.

ISSN:0003-6951    

DOI:10.1063/1.93776

出版商:AIP    

年代:1983

数据来源: AIP

摘要:

In the case of metal‐covalent semiconductor interfaces, the ‘‘pinning’’ of the metal Fermi level was attributed to large densities of interface states by Bardeen, 35 years ago. These interface states are usually thought to be in equilibrium with the metal. But capacitance measurements show unambiguously the existence of states in equilibrium with the semiconductor, even for cleaved contacts. Freeouf argued recently that this kind of states would influenceI‐Vcharacteristics. Here, some examples of such a correlation between interface states spectra andI‐Vnonidealities are presented for Au‐InP and Au‐Si contacts.

ISSN:0003-6951    

DOI:10.1063/1.93777

出版商:AIP    

年代:1983

数据来源: AIP

摘要:

By measuring the photocurrent as a function of reverse bias for InP photodiodes with a range of junction depths, the hole diffusion lengthLpof epitaxialn‐type InP (n∼1.5×1016cm−3) was determined to be approximately 12 &mgr;m. This value ofLpis an order of magnitude larger than that determined by the electron beam induced current and surface photovoltage techniques. Reasons for these discrepancies, which involve geometrical and material considerations, respectively, are discussed.

ISSN:0003-6951    

DOI:10.1063/1.93778

出版商:AIP    

年代:1983

数据来源: AIP