摘要:

The crystallinity and luminescent property were studied on evaporated CaS:Eu thin films. The orientation of the film strongly depends on substrate temperature. Distinct orientation was not observed in films deposited below 600 °C. Above 600 °C, the films tend to have a (111) orientation. The red emitting electroluminescent device with CaS:Eu active layer prepared at 680 °C which is strongly oriented to the [111] direction shows the brightness of 180 cd/m2under 1 kHz alternate excitation.

ISSN:0003-6951    

DOI:10.1063/1.96817

出版商:AIP    

年代:1986

数据来源: AIP

摘要:

Successfuln‐type doping of HgCdTe layers with indium during growth by molecular beam epitaxy is reported for the first time. The indium concentration is found to increase with the In flux. The doping level reaches around 1018cm−3, which is nearly two orders of magnitude more than what can be achieved by stoichiometry deviation in as‐grown samples. In the range studied, the electrical efficiency is substantial and decreases with increasing In atomic concentration. The experimental measurements are in agreement with a model suggesting that indium, which is not singly ionized, precipitates as In2Te3and that the native acceptor defect concentration remains approximately constant.n‐type doping is shown to be possible for a wide range of alloy concentrations. Good electron mobilities in the alloy are presented for the doping concentrations studied. This technique will greatly enhance the potential of molecular beam epitaxy for device applications of this material.

ISSN:0003-6951    

DOI:10.1063/1.96818

出版商:AIP    

年代:1986

数据来源: AIP

摘要:

A new method is proposed which gives the initial and final steady‐state densities and the generation‐annealing kinetic rates of each interface state and oxide trap species. The number of stress‐anneal cycles required to give deterministic values of the rates is equal to the number of interface or oxide traps. An implementation example is given on the post‐irradiation room‐temperature annealing of the two interface and two oxide traps in a silicon metal‐oxide‐semiconductor capacitor. Accurate relative hydrogen concentration can also be determined at atomic hydrogen densities as low as 106atoms/cm3.

ISSN:0003-6951    

DOI:10.1063/1.96819

出版商:AIP    

年代:1986

数据来源: AIP

摘要:

Rectifyingp‐njunctions have been formed betweenn‐type Ge20Bi11Se69bulk glass andp‐type chalcogenide films such as Ge20Se80and As2Se3. The forward current in the power law increased with increasing bias voltage, suggesting that it was space charge limited. The spectral response of the short circuit currents showed a maximum and a shoulder at photon energies which corresponded to the optical band gaps of thep‐type films and then‐type glass, respectively. This finding is indicative of the bending of the energy bands in both thep‐type films and then‐type glass in the vicinity of thep‐type film/n‐type glass interface.

ISSN:0003-6951    

DOI:10.1063/1.96820

出版商:AIP    

年代:1986

数据来源: AIP

摘要:

Hall effect and photoluminescence are measured for Si‐implanted and SiO2‐capped annealed GaAs, and for S‐implanted and SiN‐capped annealed GaAs. These experimental data are compared with those for Si‐implanted and SiN‐capped annealed GaAs. No remarkable change in sheet carrier concentration (Ns) is observed around dislocations and the SiAsphotoluminescence peak is absent in the SiO2‐capped annealed layer. Dislocations decreaseNsin the S‐implanted layer. These results indicate that the activation efficiency of Si implanted into GaAs is determined by SiAsacceptor concentration.

ISSN:0003-6951    

DOI:10.1063/1.96821

出版商:AIP    

年代:1986

数据来源: AIP

摘要:

The selective optical compensation effect in which exclusively acceptor‐associated emissionsgand [g‐g] are selectively quenched by the simultaneous presence of acceptor and donor atoms, was investigated in dually Zn+(acceptor)‐implanted and Se+(donor)‐implanted GaAs as a function of Se to Zn concentration ratio, [Se]/[Zn], at a fixed Zn concentration of 1×1017cm−3. It was revealed for the first time that Se atoms with one‐tenth of the concentration of Zn have the ability to significantly suppress the [g‐g] emission. However, thegemission is not significantly suppressed by the presence of even an equal concentration of Se atoms.

ISSN:0003-6951    

DOI:10.1063/1.96822

出版商:AIP    

年代:1986

数据来源: AIP

摘要:

We describe a method of metal deposition by electron beam exposure and pyrolysis of a gold containing organometallic polymer. Commercial gold containing solutions were used as negative electron beam resists with line dose sensitivities of about 0.2 &mgr;C/cm as developed in methylene chloride. We have demonstrated the formation of metal patterns on Si, GaAs, and polyimide with linewidths as small as 0.25 &mgr;m.

ISSN:0003-6951    

DOI:10.1063/1.96823

出版商:AIP    

年代:1986

数据来源: AIP

摘要:

The transformations of partially amorphous CdS surfaces induced by 100–400 keV electrons have been followed in real time by atomic‐resolution electron microscopy. A definite sequence of atomic rearrangements leading to nucleation and growth of CdSandCd crystals was observed. These processes are believed to be due to nonthermal mechanisms involving inelastic electron collisions rather than direct knock‐on collisions between electrons and the atomic nuclei since there is no threshold over the range of incident electron energies. These effects may be responsible for the degradation of electron beam pumped CdS lasers which has been reported elsewhere.

ISSN:0003-6951    

DOI:10.1063/1.96824

出版商:AIP    

年代:1986

数据来源: AIP

摘要:

Photocurrent spectroscopy is used to measure the polarization dependence of optical transitions in &bgr;‐ZnP2and to identify an impurity state. A large polarization dependence was measured in the photocurrent spectrum with the light polarized parallel or perpendicular to thecaxis of a &bgr;‐ZnP2crystal. Structure observed in the spectra was attributed to polaritons and, in then‐type samples, to an impurity level associated with tin.

ISSN:0003-6951    

DOI:10.1063/1.96825

出版商:AIP    

年代:1986

数据来源: AIP

摘要:

Molecular beam epitaxy methods have been used to grow high quality single crystal films of bcc &agr;‐Fe on fcc (zinc blende) ZnSe (001) epilayers on GaAs (001). These films were characterized by reflection high‐energy electron diffraction, Auger electron spectroscopy, ferromagnetic resonance (FMR), and vibrating sample magnetometry. The FMR linewidth and measured coercive field are significantly smaller than previously reported for single crystal Fe films.

ISSN:0003-6951    

DOI:10.1063/1.96778

出版商:AIP    

年代:1986

数据来源: AIP