摘要:

An ArF excimer laser has been used to achieve homoepitaxy of GaP at 500 °C using trimethylgallium and tertiarybutylphosphine as the precursor gases. Dependence of epitaxial growth on several parameters is examined. It is found that at 500 °C, in the presence of laser radiation, higher growth rate and superior crystalline properties of GaP are achieved compared to purely thermal growth. Electrical properties ofp‐ndiodes fabricated via Zn doping have also been examined.

ISSN:0003-6951    

DOI:10.1063/1.101791

出版商:AIP    

年代:1989

数据来源: AIP

摘要:

Aluminum deposition on Si was studied using diethylaluminumchloride (DEAlCl) as a new Al chemical vapor deposition source. Selective area deposition was successfully achieved at substrate temperatures of 313–380 °C. The deposition rate was higher than 370 A˚/min. Reflectance and resistivity of the deposited films were comparable to those of the evaporated ones. Decomposition experiments suggest that DEAlCl catalytically decomposes on the Al surface, which would explain the high selectivity observed.

ISSN:0003-6951    

DOI:10.1063/1.101792

出版商:AIP    

年代:1989

数据来源: AIP

摘要:

We have calculated hole tunneling times in GaAs/AlAs double‐barrier structures taking quantum well band‐mixing effects into account. Our results indicate that for sufficiently high hole temperatures and concentrations, band‐mixing effects reduce average hole tunneling times from the pure heavy hole value to values comparable to electron tunneling times in the same structure. For very low hole temperatures and concentrations, band mixing is less important and average hole tunneling times should approach the pure heavy hole value. These results provide an explanation for previously reported experimental results in which electrons and holes were found to be characterized by very similar tunneling times.

ISSN:0003-6951    

DOI:10.1063/1.101793

出版商:AIP    

年代:1989

数据来源: AIP

摘要:

Solid phase epitaxy of a Ge70Si30alloy on [111]Si substrates was achieved in the amorphous Ge/Pd2Si/[111]Si system. Upon annealing at temperatures above 600 °C,the Ge transported through the silicide layer and formed a Ge‐rich, Si‐Ge epitaxial layer on top of the Si substrate. At the same time the Pd silicide layer exchanged positions with the Ge, leading to the final configuration of Pd2Si/Si‐Ge/[111]Si. The crystallinity of Pd2Si had a major effect on the epitaxy of the Ge‐Si alloy. On [100]Si where the Pd2Si was polycrystalline, epitaxial Ge‐Si growth was not observed.

ISSN:0003-6951    

DOI:10.1063/1.101794

出版商:AIP    

年代:1989

数据来源: AIP

摘要:

We have grown and characterized heteroepitaxial films of InP on GaAs. We demonstrate that by using flow‐rate modulation epitaxy to grow the interface layer in a two‐step process, we can improve the quality of heteroepitaxy films. The full widths at half maximum of the x‐ray rocking curve and the 10 K photoluminescence spectrum for a 6.2‐&mgr;m‐thick InP/GaAs are 144 arcsec and 1.28 meV, respectively.

ISSN:0003-6951    

DOI:10.1063/1.101795

出版商:AIP    

年代:1989

数据来源: AIP

摘要:

Data are presented onp‐nAlyGa1−yAs‐ GaAs‐InxGa1−xAs quantum well heterostructure lasers showing that the large band filling range of a combined GaAs‐InxGa1−xAs quantum well makes possible a very large tuning range in external grating operation. Continuous 300 K laser operation is demonstrated in the 8696–9711 A˚ range (&Dgr;&lgr;∼1000 A˚, &Dgr;ℏ&ohgr;∼150 meV) and pulsed operation in the 8450–9756 A˚ range (&Dgr;&lgr;∼1300 A˚, &Dgr;ℏ&ohgr;∼200 meV). The band filling and gain profile are shown to be continuous from the InxGa1−xAs quantum well (Lz∼125 A˚,x∼0.2) up into the surrounding GaAs quantum well (Lz∼430 A˚).

ISSN:0003-6951    

DOI:10.1063/1.101796

出版商:AIP    

年代:1989

数据来源: AIP

摘要:

This letter presents electrical characteristics of thin (110 A˚) metal‐oxide‐semiconductor gate dielectrics formed by chemical vapor deposited (CVD) SiO2, followed by rapid thermal nitridation and furnace reoxidation. Electrical measurements show that reoxidized‐nitrided CVD dielectrics exhibit lower rates of interface‐state generation and electron trapping under electrical stress, as compared to as‐deposited CVD oxides. Combining with the advantage of lower defect density from CVD oxides (as compared to thermal oxide), these reoxidized‐nitrided CVD films may be promising candidates for thin dielectrics applications.

ISSN:0003-6951    

DOI:10.1063/1.102443

出版商:AIP    

年代:1989

数据来源: AIP

摘要:

Tunable stimualted emission of radiation is achieved in AlxGa1−xAs/GaAs double heterostructures, in which the waveguiding GaAs region consists of a delta‐doped doping superlattice. The low‐temperature emission energy is 45 meV below the bulk band gap of GaAs for homogeneous optical excitation of the Fabry–Perot cavity. The emission energy is continuously tunable over 35 A˚ by inhomogeneous excitation of the cavity.

ISSN:0003-6951    

DOI:10.1063/1.101797

出版商:AIP    

年代:1989

数据来源: AIP

摘要:

Incidence angle effect of a hydrogen plasma beam with an ion energy of about 20 eV was observed in a cleaning process for GaAs and Si surfaces for the first time. An atomically flat (001) GaAs substrate surface which was observed by clear Laue spots was prepared with a glancing angle of incidence. Similar improvement of smoothness was observed with the glancing angle of incidence on a Si surface when it was compared with perpendicular incidence. The mechanism is discussed considering momentum transfer parallel to the surface in the collision process and the resultant migration enhancement on the surface.

ISSN:0003-6951    

DOI:10.1063/1.101798

出版商:AIP    

年代:1989

数据来源: AIP

摘要:

The interband optical transition in quantum wells of hydrogenated amorphous silicon and silicon carbide has been studied by using electroabsorption (EA) spectroscopy. The observed EA spectrum exhibits a triangular line shape, identified as being due to a field‐induced modification of the subband transition. The identification is confirmed by comparing with the experimental result of thermoabsorption spectroscopy.

ISSN:0003-6951    

DOI:10.1063/1.101799

出版商:AIP    

年代:1989

数据来源: AIP